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Zero Bias Sidewall Junction Capacitance Formula

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Zero Bias Sidewall Junction Potential is the built-in potential in the sidewall junction of certain transistor structures. Check FAQs

C j0sw = \sqrt{\frac{[Permitivity-silicon] \cdot [Charge-e]}{2} \cdot (\frac{N A(sw) \cdot N D}{N A(sw) + N D}) \cdot \frac{1}{Φ osw}}

C_j0sw - Zero Bias Sidewall Junction Potential?N_A(sw) - Sidewall Doping Density?N_D - Doping Concentration of Donor?Φ_osw - Built in Potential of Sidewall Junctions?[Permitivity-silicon] - Permittivity of silicon?[Charge-e] - Charge of electron?

Zero Bias Sidewall Junction Capacitance Example

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Here is how the Zero Bias Sidewall Junction Capacitance equation looks like with Values.

Here is how the Zero Bias Sidewall Junction Capacitance equation looks like with Units.

Here is how the Zero Bias Sidewall Junction Capacitance equation looks like.

1E-7 = \sqrt{\frac{11.7 \cdot 1.6E-19}{2} \cdot (\frac{0.35 \cdot 3.01}{0.35 + 3.01}) \cdot \frac{1}{3.2E-5}}

1E-7F = \sqrt{\frac{11.7 \cdot 1.6E-19C}{2} \cdot (\frac{0.35electrons/m³ \cdot 3.01electrons/cm³}{0.35electrons/m³ + 3.01electrons/cm³}) \cdot \frac{1}{3.2E-5V}}

1E-7 = \sqrt{\frac{11.7 \cdot 1.6E-19}{2} \cdot (\frac{0.35 \cdot 3.01}{0.35 + 3.01}) \cdot \frac{1}{3.2E-5}}

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Zero Bias Sidewall Junction Capacitance Solution

Follow our step by step solution on how to calculate Zero Bias Sidewall Junction Capacitance?

FIRST Step Consider the formula

C j0sw = \sqrt{\frac{[Permitivity-silicon] \cdot [Charge-e]}{2} \cdot (\frac{N A(sw) \cdot N D}{N A(sw) + N D}) \cdot \frac{1}{Φ osw}}

Next Step Substitute values of Variables

∴

C j0sw = \sqrt{\frac{[Permitivity-silicon] \cdot [Charge-e]}{2} \cdot (\frac{0.35electrons/m³ \cdot 3.01electrons/cm³}{0.35electrons/m³ + 3.01electrons/cm³}) \cdot \frac{1}{3.2E-5V}}

Next Step Substitute values of Constants

∴

C j0sw = \sqrt{\frac{11.7 \cdot 1.6E-19C}{2} \cdot (\frac{0.35electrons/m³ \cdot 3.01electrons/cm³}{0.35electrons/m³ + 3.01electrons/cm³}) \cdot \frac{1}{3.2E-5V}}

Next Step Convert Units

∴

C j0sw = \sqrt{\frac{11.7 \cdot 1.6E-19C}{2} \cdot (\frac{0.35electrons/m³ \cdot 3E+6electrons/m³}{0.35electrons/m³ + 3E+6electrons/m³}) \cdot \frac{1}{3.2E-5V}}

Next Step Prepare to Evaluate

∴

C j0sw = \sqrt{\frac{11.7 \cdot 1.6E-19}{2} \cdot (\frac{0.35 \cdot 3E+6}{0.35 + 3E+6}) \cdot \frac{1}{3.2E-5}}

Next Step Evaluate

∴

C j0sw = 1.01249324812588E-07F

LAST Step Rounding Answer

∴

C j0sw = 1E-7F

Zero Bias Sidewall Junction Capacitance Formula Elements

Variables

Constants

Functions

Zero Bias Sidewall Junction Potential

Zero Bias Sidewall Junction Potential is the built-in potential in the sidewall junction of certain transistor structures.

Symbol: C_j0sw

Measurement: CapacitanceUnit: F

Note: Value should be greater than 0.

Formulas to find Zero Bias Sidewall Junction Potential

Sidewall Doping Density

Sidewall Doping Density refers to the concentration of dopant atoms along the sidewalls of the transistor structure.

Symbol: N_A(sw)

Measurement: Electron DensityUnit: electrons/m³

Note: Value should be greater than 0.

Formulas to find Sidewall Doping Density

Doping Concentration of Donor

Doping Concentration of Donor refers to the concentration of donor atoms intentionally added to a semiconductor material.

Symbol: N_D

Measurement: Electron DensityUnit: electrons/cm³

Note: Value should be greater than 0.

Formulas to find Doping Concentration of Donor

Built in Potential of Sidewall Junctions

Built in Potential of Sidewall Junctions refers to the junction formed along the vertical or sidewall surfaces of the transistor structure.

Symbol: Φ_osw

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Built in Potential of Sidewall Junctions

Permittivity of silicon

Permittivity of silicon measures its ability to store electrical energy in an electric field, vital in semiconductor technology.

Symbol: [Permitivity-silicon]

Value: 11.7

Charge of electron

Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.

Symbol: [Charge-e]

Value: 1.60217662E-19 C

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in MOSFET Amplifiers category

Go Zero Bias Junction Capacitance

C j0 = \sqrt{\frac{ε si \cdot [Charge-e]}{2} \cdot (\frac{N A \cdot N D}{N A + N D}) \cdot \frac{1}{Φ o}}

How to Evaluate Zero Bias Sidewall Junction Capacitance?

Zero Bias Sidewall Junction Capacitance evaluator uses Zero Bias Sidewall Junction Potential = sqrt(([Permitivity-silicon]*[Charge-e])/2*((Sidewall Doping Density*Doping Concentration of Donor)/(Sidewall Doping Density+Doping Concentration of Donor))*1/Built in Potential of Sidewall Junctions) to evaluate the Zero Bias Sidewall Junction Potential, The Zero Bias Sidewall Junction Capacitance formula is defined as the built-in potential in the sidewall junction of certain transistor structures. Zero Bias Sidewall Junction Potential is denoted by C_j0sw symbol.

How to evaluate Zero Bias Sidewall Junction Capacitance using this online evaluator? To use this online evaluator for Zero Bias Sidewall Junction Capacitance, enter Sidewall Doping Density (N_A(sw)), Doping Concentration of Donor (N_D) & Built in Potential of Sidewall Junctions (Φ_osw) and hit the calculate button.

FAQs on Zero Bias Sidewall Junction Capacitance

What is the formula to find Zero Bias Sidewall Junction Capacitance?

The formula of Zero Bias Sidewall Junction Capacitance is expressed as Zero Bias Sidewall Junction Potential = sqrt(([Permitivity-silicon]*[Charge-e])/2*((Sidewall Doping Density*Doping Concentration of Donor)/(Sidewall Doping Density+Doping Concentration of Donor))*1/Built in Potential of Sidewall Junctions). Here is an example- 4.6E-10 = sqrt(([Permitivity-silicon]*[Charge-e])/2*((0.35*3010000)/(0.35+3010000))*1/3.2E-05).

How to calculate Zero Bias Sidewall Junction Capacitance?

With Sidewall Doping Density (N_A(sw)), Doping Concentration of Donor (N_D) & Built in Potential of Sidewall Junctions (Φ_osw) we can find Zero Bias Sidewall Junction Capacitance using the formula - Zero Bias Sidewall Junction Potential = sqrt(([Permitivity-silicon]*[Charge-e])/2*((Sidewall Doping Density*Doping Concentration of Donor)/(Sidewall Doping Density+Doping Concentration of Donor))*1/Built in Potential of Sidewall Junctions). This formula also uses Permittivity of silicon, Charge of electron constant(s) and Square Root (sqrt) function(s).

Can the Zero Bias Sidewall Junction Capacitance be negative?

No, the Zero Bias Sidewall Junction Capacitance, measured in Capacitance cannot be negative.

Which unit is used to measure Zero Bias Sidewall Junction Capacitance?

Zero Bias Sidewall Junction Capacitance is usually measured using the Farad[F] for Capacitance. Kilofarad[F], Millifarad[F], Microfarad[F] are the few other units in which Zero Bias Sidewall Junction Capacitance can be measured.

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Zero Bias Sidewall Junction Capacitance Formula

Zero Bias Sidewall Junction Capacitance Example

Zero Bias Sidewall Junction Capacitance Solution

Zero Bias Sidewall Junction Capacitance Formula Elements

Other formulas in MOSFET Amplifiers category

How to Evaluate Zero Bias Sidewall Junction Capacitance?

FAQs on Zero Bias Sidewall Junction Capacitance

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