Voltage Drop in IGBT in ON-State Formula

Fx Copy
LaTeX Copy
Voltage Drop ON Stage (IGBT) is the voltage difference between the collector and emitter terminals when the IGBT is turned on. It is semiconductor material in the device. Check FAQs
VON(igbt)=if(igbt)Rch(igbt)+if(igbt)Rd(igbt)+Vj1(igbt)
VON(igbt) - Voltage Drop ON Stage (IGBT)?if(igbt) - Forward Current (IGBT)?Rch(igbt) - N Channel Resistance (IGBT)?Rd(igbt) - Drift Resistance (IGBT)?Vj1(igbt) - Voltage Pn Junction 1 (IGBT)?

Voltage Drop in IGBT in ON-State Example

With values
With units
Only example

Here is how the Voltage Drop in IGBT in ON-State equation looks like with Values.

Here is how the Voltage Drop in IGBT in ON-State equation looks like with Units.

Here is how the Voltage Drop in IGBT in ON-State equation looks like.

20.2533Edit=1.69Edit10.59Edit+1.69Edit0.98Edit+0.7Edit
You are here -
HomeIcon Home » Category Engineering » Category Electrical » Category Power Electronics » fx Voltage Drop in IGBT in ON-State

Voltage Drop in IGBT in ON-State Solution

Follow our step by step solution on how to calculate Voltage Drop in IGBT in ON-State?

FIRST Step Consider the formula
VON(igbt)=if(igbt)Rch(igbt)+if(igbt)Rd(igbt)+Vj1(igbt)
Next Step Substitute values of Variables
VON(igbt)=1.69mA10.59+1.69mA0.98+0.7V
Next Step Convert Units
VON(igbt)=0.0017A10590Ω+0.0017A980Ω+0.7V
Next Step Prepare to Evaluate
VON(igbt)=0.001710590+0.0017980+0.7
LAST Step Evaluate
VON(igbt)=20.2533V

Voltage Drop in IGBT in ON-State Formula Elements

Variables
Voltage Drop ON Stage (IGBT)
Voltage Drop ON Stage (IGBT) is the voltage difference between the collector and emitter terminals when the IGBT is turned on. It is semiconductor material in the device.
Symbol: VON(igbt)
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Forward Current (IGBT)
Forward Current (IGBT) is the maximum current that can flow through the device when it is turned on.
Symbol: if(igbt)
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.
N Channel Resistance (IGBT)
N Channel Resistance (IGBT) is the resistance of the semiconductor material in the device when the IGBT is turned on.
Symbol: Rch(igbt)
Measurement: Electric ResistanceUnit:
Note: Value should be greater than 0.
Drift Resistance (IGBT)
Drift Resistance (IGBT) is N-drift region of the semiconductor material in the device. The N-drift region is a thick doped silicon that separates the collector from the P-base region.
Symbol: Rd(igbt)
Measurement: Electric ResistanceUnit:
Note: Value should be greater than 0.
Voltage Pn Junction 1 (IGBT)
Voltage Pn Junction 1 (IGBT) is caused by the potential barrier that exists at the junction. This potential barrier is created by the diffusion of charge carriers across the junction.
Symbol: Vj1(igbt)
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.

Other formulas in IGBT category

​Go IGBT Turn OFF Time
Toff(igbt)=Tdl(igbt)+tf1(igbt)+tf2(igbt)
​Go Emitter Current of IGBT
Ie(igbt)=Ih(igbt)+ie(igbt)
​Go Input Capacitance of IGBT
Cin(igbt)=C(g-e)(igbt)+C(g-c)(igbt)
​Go Nominal Continuous Collector Current of IGBT
if(igbt)=-Vce(igbt)+(Vce(igbt))2+4Rce(igbt)(Tjmax(igbt)-Tc(igbt)Rth(jc)(igbt))2Rce(igbt)

How to Evaluate Voltage Drop in IGBT in ON-State?

Voltage Drop in IGBT in ON-State evaluator uses Voltage Drop ON Stage (IGBT) = Forward Current (IGBT)*N Channel Resistance (IGBT)+Forward Current (IGBT)*Drift Resistance (IGBT)+Voltage Pn Junction 1 (IGBT) to evaluate the Voltage Drop ON Stage (IGBT), Voltage Drop in IGBT in ON-State is caused by the resistance of the semiconductor material in the device, as well as the resistance of the bond wires and other internal connections. The voltage drop in an IGBT on-state can be reduced by using a larger device with a lower on-state resistance. Another way to reduce the voltage drop is to reduce the current flowing through the device. Voltage Drop ON Stage (IGBT) is denoted by VON(igbt) symbol.

How to evaluate Voltage Drop in IGBT in ON-State using this online evaluator? To use this online evaluator for Voltage Drop in IGBT in ON-State, enter Forward Current (IGBT) (if(igbt)), N Channel Resistance (IGBT) (Rch(igbt)), Drift Resistance (IGBT) (Rd(igbt)) & Voltage Pn Junction 1 (IGBT) (Vj1(igbt)) and hit the calculate button.

FAQs on Voltage Drop in IGBT in ON-State

What is the formula to find Voltage Drop in IGBT in ON-State?
The formula of Voltage Drop in IGBT in ON-State is expressed as Voltage Drop ON Stage (IGBT) = Forward Current (IGBT)*N Channel Resistance (IGBT)+Forward Current (IGBT)*Drift Resistance (IGBT)+Voltage Pn Junction 1 (IGBT). Here is an example- 18.59876 = 0.00169*10590+0.00169*0.98+0.7.
How to calculate Voltage Drop in IGBT in ON-State?
With Forward Current (IGBT) (if(igbt)), N Channel Resistance (IGBT) (Rch(igbt)), Drift Resistance (IGBT) (Rd(igbt)) & Voltage Pn Junction 1 (IGBT) (Vj1(igbt)) we can find Voltage Drop in IGBT in ON-State using the formula - Voltage Drop ON Stage (IGBT) = Forward Current (IGBT)*N Channel Resistance (IGBT)+Forward Current (IGBT)*Drift Resistance (IGBT)+Voltage Pn Junction 1 (IGBT).
Can the Voltage Drop in IGBT in ON-State be negative?
No, the Voltage Drop in IGBT in ON-State, measured in Electric Potential cannot be negative.
Which unit is used to measure Voltage Drop in IGBT in ON-State?
Voltage Drop in IGBT in ON-State is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Voltage Drop in IGBT in ON-State can be measured.
Copied!