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Transconductance Parameter of MOS Transistor Formula

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Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L). Check FAQs

K n = \frac{i d}{(V ox - V t) \cdot V gs}

K_n - Transconductance Parameter?i_d - Drain Current?V_ox - Voltage across Oxide?V_t - Threshold Voltage?V_gs - Voltage between Gate and Source?

Transconductance Parameter of MOS Transistor Example

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Here is how the Transconductance Parameter of MOS Transistor equation looks like with Values.

Here is how the Transconductance Parameter of MOS Transistor equation looks like with Units.

Here is how the Transconductance Parameter of MOS Transistor equation looks like.

2.9518 = \frac{17.5}{(3.775 - 2) \cdot 3.34}

2.9518mA/V² = \frac{17.5mA}{(3.775V - 2V) \cdot 3.34V}

2.9518 = \frac{17.5}{(3.775 - 2) \cdot 3.34}

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Transconductance Parameter of MOS Transistor Solution

Follow our step by step solution on how to calculate Transconductance Parameter of MOS Transistor?

FIRST Step Consider the formula

K n = \frac{i d}{(V ox - V t) \cdot V gs}

Next Step Substitute values of Variables

∴

K n = \frac{17.5mA}{(3.775V - 2V) \cdot 3.34V}

Next Step Convert Units

∴

K n = \frac{0.0175A}{(3.775V - 2V) \cdot 3.34V}

Next Step Prepare to Evaluate

∴

K n = \frac{0.0175}{(3.775 - 2) \cdot 3.34}

Next Step Evaluate

∴

K n = 0.00295184279328667A/V²

Next Step Convert to Output's Unit

∴

K n = 2.95184279328667mA/V²

LAST Step Rounding Answer

∴

K n = 2.9518mA/V²

Transconductance Parameter of MOS Transistor Formula Elements

Variables

Transconductance Parameter

Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L).

Symbol: K_n

Measurement: Transconductance ParameterUnit: mA/V²

Note: Value should be greater than 0.

Formulas to find Transconductance Parameter

Drain Current

Drain current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.

Symbol: i_d

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Drain Current

Voltage across Oxide

Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.

Symbol: V_ox

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Voltage across Oxide

Threshold Voltage

Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.

Symbol: V_t

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Threshold Voltage

Voltage between Gate and Source

The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.

Symbol: V_gs

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Voltage between Gate and Source

Other formulas in Transistor Amplifier Characteristics category

Go Total Instantaneous Drain Voltage

V d = V fc - R d \cdot i d

Go Current Flowing through Induced Channel in Transistor given Oxide Voltage

i o = (μ e \cdot C ox \cdot (\frac{W c}{L}) \cdot (V ox - V t)) \cdot V ds

Go Current Entering Drain Terminal of MOSFET at Saturation

i ds = \frac{1}{2} \cdot k' n \cdot (\frac{W c}{L}) \cdot {(V ov)}^{2}

Go Input Voltage in Transistor

V fc = R d \cdot i d - V d

How to Evaluate Transconductance Parameter of MOS Transistor?

Transconductance Parameter of MOS Transistor evaluator uses Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source) to evaluate the Transconductance Parameter, Transconductance Parameter of MOS Transistor is a measure of the transistor's ability to control the flow of current in response to a voltage applied across its gate and source terminals. Transconductance Parameter is denoted by K_n symbol.

How to evaluate Transconductance Parameter of MOS Transistor using this online evaluator? To use this online evaluator for Transconductance Parameter of MOS Transistor, enter Drain Current (i_d), Voltage across Oxide (V_ox), Threshold Voltage (V_t) & Voltage between Gate and Source (V_gs) and hit the calculate button.

FAQs on Transconductance Parameter of MOS Transistor

What is the formula to find Transconductance Parameter of MOS Transistor?

The formula of Transconductance Parameter of MOS Transistor is expressed as Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source). Here is an example- 2951.843 = 0.0175/((3.775-2)*3.34).

How to calculate Transconductance Parameter of MOS Transistor?

With Drain Current (i_d), Voltage across Oxide (V_ox), Threshold Voltage (V_t) & Voltage between Gate and Source (V_gs) we can find Transconductance Parameter of MOS Transistor using the formula - Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source).

Can the Transconductance Parameter of MOS Transistor be negative?

No, the Transconductance Parameter of MOS Transistor, measured in Transconductance Parameter cannot be negative.

Which unit is used to measure Transconductance Parameter of MOS Transistor?

Transconductance Parameter of MOS Transistor is usually measured using the Milliampere per Square Volt[mA/V²] for Transconductance Parameter. Ampere per Square Volt[mA/V²], Microampere per Square Volt[mA/V²] are the few other units in which Transconductance Parameter of MOS Transistor can be measured.

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Transconductance Parameter of MOS Transistor Formula

Transconductance Parameter of MOS Transistor Example

Transconductance Parameter of MOS Transistor Solution

Transconductance Parameter of MOS Transistor Formula Elements

Other formulas in Transistor Amplifier Characteristics category

How to Evaluate Transconductance Parameter of MOS Transistor?

FAQs on Transconductance Parameter of MOS Transistor

Variable Name