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Transconductance in Saturation Region in MESFET Formula

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Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage. Check FAQs

G m = g 0 \cdot (1 - \sqrt{\frac{V i - V G}{V p}})

G_m - Transconductance of the MESFET?g₀ - Output Conductance?V_i - Input Voltage?V_G - Threshold Voltage?V_p - Pinch-off Voltage?

Transconductance in Saturation Region in MESFET Example

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Here is how the Transconductance in Saturation Region in MESFET equation looks like with Values.

Here is how the Transconductance in Saturation Region in MESFET equation looks like with Units.

Here is how the Transconductance in Saturation Region in MESFET equation looks like.

0.0631 = 0.152 \cdot (1 - \sqrt{\frac{2.25 - 1.562}{2.01}})

0.0631S = 0.152S \cdot (1 - \sqrt{\frac{2.25V - 1.562V}{2.01V}})

0.0631 = 0.152 \cdot (1 - \sqrt{\frac{2.25 - 1.562}{2.01}})

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Transconductance in Saturation Region in MESFET Solution

Follow our step by step solution on how to calculate Transconductance in Saturation Region in MESFET?

FIRST Step Consider the formula

G m = g 0 \cdot (1 - \sqrt{\frac{V i - V G}{V p}})

Next Step Substitute values of Variables

∴

G m = 0.152S \cdot (1 - \sqrt{\frac{2.25V - 1.562V}{2.01V}})

Next Step Prepare to Evaluate

∴

G m = 0.152 \cdot (1 - \sqrt{\frac{2.25 - 1.562}{2.01}})

Next Step Evaluate

∴

G m = 0.0630717433777618S

LAST Step Rounding Answer

∴

G m = 0.0631S

Transconductance in Saturation Region in MESFET Formula Elements

Variables

Functions

Transconductance of the MESFET

Transconductance of the MESFET is a key parameter in MESFETs, representing the change in drain current with respect to the change in gate-source voltage.

Symbol: G_m

Measurement: Electric ConductanceUnit: S

Note: Value should be greater than 0.

Formulas to find Transconductance of the MESFET

Output Conductance

Output Conductance is a parameter that characterizes the behavior of a field-effect transistor (FET) in its saturation region.

Symbol: g₀

Measurement: Electric ConductanceUnit: S

Note: Value should be greater than 0.

Formulas to find Output Conductance

Input Voltage

Input Voltage is the electrical potential difference applied to the input terminals of a component or system.

Symbol: V_i

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Input Voltage

Threshold Voltage

Threshold Voltage is referred as the voltage at which the transistor starts to conduct.

Symbol: V_G

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Threshold Voltage

Pinch-off Voltage

Pinch-off Voltage represents the gate-source voltage at which the channel of the MESFET closes, or "pinches off" .

Symbol: V_p

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Pinch-off Voltage

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in Transistor Amplifiers category

Go MESFET Cutoff Frequency

f co = \frac{G m}{2 \cdot π \cdot C gs}

Go Maximum Operating Frequency

f max = \frac{f co}{2} \cdot \sqrt{\frac{R d}{R s + R i + R g}}

Go Maximum Frequency of Oscillation

f max o = \frac{v s}{2 \cdot π \cdot L c}

Go Noise Factor GaAs MESFET

NF = 1 + 2 \cdot ω \cdot \frac{C gs}{G m} \cdot \sqrt{\frac{R s - R gate}{R i}}

How to Evaluate Transconductance in Saturation Region in MESFET?

Transconductance in Saturation Region in MESFET evaluator uses Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage)) to evaluate the Transconductance of the MESFET, The Transconductance in Saturation Region in MESFET formula is defined as measures the sensitivity of the drain current (Id) to changes in the gate-source voltage (Vgs) when the transistor is operating in its linear or small-signal region. Transconductance of the MESFET is denoted by G_m symbol.

How to evaluate Transconductance in Saturation Region in MESFET using this online evaluator? To use this online evaluator for Transconductance in Saturation Region in MESFET, enter Output Conductance (g₀), Input Voltage (V_i), Threshold Voltage (V_G) & Pinch-off Voltage (V_p) and hit the calculate button.

FAQs on Transconductance in Saturation Region in MESFET

What is the formula to find Transconductance in Saturation Region in MESFET?

The formula of Transconductance in Saturation Region in MESFET is expressed as Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage)). Here is an example- 0.063072 = 0.152*(1-sqrt((2.25-1.562)/2.01)).

How to calculate Transconductance in Saturation Region in MESFET?

With Output Conductance (g₀), Input Voltage (V_i), Threshold Voltage (V_G) & Pinch-off Voltage (V_p) we can find Transconductance in Saturation Region in MESFET using the formula - Transconductance of the MESFET = Output Conductance*(1-sqrt((Input Voltage-Threshold Voltage)/Pinch-off Voltage)). This formula also uses Square Root (sqrt) function(s).

Can the Transconductance in Saturation Region in MESFET be negative?

No, the Transconductance in Saturation Region in MESFET, measured in Electric Conductance cannot be negative.

Which unit is used to measure Transconductance in Saturation Region in MESFET?

Transconductance in Saturation Region in MESFET is usually measured using the Siemens[S] for Electric Conductance. Megasiemens[S], Millisiemens[S], Mho[S] are the few other units in which Transconductance in Saturation Region in MESFET can be measured.

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Transconductance in Saturation Region in MESFET Formula

Transconductance in Saturation Region in MESFET Example

Transconductance in Saturation Region in MESFET Solution

Transconductance in Saturation Region in MESFET Formula Elements

Other formulas in Transistor Amplifiers category

How to Evaluate Transconductance in Saturation Region in MESFET?

FAQs on Transconductance in Saturation Region in MESFET

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