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Transconductance is defined as the ratio of the change in drain current to the change in gate-source voltage, assuming a constant drain-source voltage. Check FAQs
gm=Go(1-Vi-VgVp)
gm - Transconductance?Go - Output Conductance?Vi - Schottky Diode Potential Barrier?Vg - Gate Voltage?Vp - Pinch Off Voltage?

Transconductance in Saturation Region Example

With values
With units
Only example

Here is how the Transconductance in Saturation Region equation looks like with Values.

Here is how the Transconductance in Saturation Region equation looks like with Units.

Here is how the Transconductance in Saturation Region equation looks like.

0.051Edit=0.174Edit(1-15.9Edit-9.62Edit12.56Edit)
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Transconductance in Saturation Region Solution

Follow our step by step solution on how to calculate Transconductance in Saturation Region?

FIRST Step Consider the formula
gm=Go(1-Vi-VgVp)
Next Step Substitute values of Variables
gm=0.174S(1-15.9V-9.62V12.56V)
Next Step Prepare to Evaluate
gm=0.174(1-15.9-9.6212.56)
Next Step Evaluate
gm=0.0509634200735407S
LAST Step Rounding Answer
gm=0.051S

Transconductance in Saturation Region Formula Elements

Variables
Functions
Transconductance
Transconductance is defined as the ratio of the change in drain current to the change in gate-source voltage, assuming a constant drain-source voltage.
Symbol: gm
Measurement: TransconductanceUnit: S
Note: Value can be positive or negative.
Output Conductance
The Output Conductance represents the small-signal drain-source conductance of the MOSFET when the gate-source voltage is held constant.
Symbol: Go
Measurement: Electric ConductanceUnit: S
Note: Value can be positive or negative.
Schottky Diode Potential Barrier
Schottky Diode Potential Barrier is the energy barrier that exists at the interface between a metal and a semiconductor material in a Schottky diode.
Symbol: Vi
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Gate Voltage
Gate Voltage refers to the voltage applied to the control terminal of a MESFET to regulate its conductance.The gate voltage determines the number of free charge carriers in the channel.
Symbol: Vg
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Pinch Off Voltage
Pinch Off Voltage is the gate voltage at which the channel becomes completely pinched off, and is a key parameter in the operation of FETs. It is an important parameter in circuit design.
Symbol: Vp
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
sqrt
A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.
Syntax: sqrt(Number)

Other Formulas to find Transconductance

​Go Transconductance in MESFET
gm=2Cgsπfco

Other formulas in MESFET Characteristics category

​Go Gate Length of MESFET
Lgate=Vs4πfco
​Go Cut-off Frequency
fco=Vs4πLgate
​Go Gate Source Capacitance
Cgs=gm2πfco
​Go Maximum Frequency of Oscillations in MESFET
fm=(ft2)RdRg

How to Evaluate Transconductance in Saturation Region?

Transconductance in Saturation Region evaluator uses Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage)) to evaluate the Transconductance, The Transconductance in Saturation Region formula is defined as the ratio of the change in the drain current to the change in the gate voltage at a fixed drain voltage, while the device is operating in the saturation region. It is a measure of the device's ability to amplify small changes in the input voltage applied to the gate electrode. Transconductance is denoted by gm symbol.

How to evaluate Transconductance in Saturation Region using this online evaluator? To use this online evaluator for Transconductance in Saturation Region, enter Output Conductance (Go), Schottky Diode Potential Barrier (Vi), Gate Voltage (Vg) & Pinch Off Voltage (Vp) and hit the calculate button.

FAQs on Transconductance in Saturation Region

What is the formula to find Transconductance in Saturation Region?
The formula of Transconductance in Saturation Region is expressed as Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage)). Here is an example- 0.050963 = 0.174*(1-sqrt((15.9-9.62)/12.56)).
How to calculate Transconductance in Saturation Region?
With Output Conductance (Go), Schottky Diode Potential Barrier (Vi), Gate Voltage (Vg) & Pinch Off Voltage (Vp) we can find Transconductance in Saturation Region using the formula - Transconductance = Output Conductance*(1-sqrt((Schottky Diode Potential Barrier-Gate Voltage)/Pinch Off Voltage)). This formula also uses Square Root (sqrt) function(s).
What are the other ways to Calculate Transconductance?
Here are the different ways to Calculate Transconductance-
  • Transconductance=2*Gate Source Capacitance*pi*Cut-off FrequencyOpenImg
Can the Transconductance in Saturation Region be negative?
Yes, the Transconductance in Saturation Region, measured in Transconductance can be negative.
Which unit is used to measure Transconductance in Saturation Region?
Transconductance in Saturation Region is usually measured using the Siemens[S] for Transconductance. Millisiemens[S] are the few other units in which Transconductance in Saturation Region can be measured.
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