Total Power Dissipated in NMOS Formula

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Power dissipated refers to the energy that is converted into heat and lost in a circuit or system due to the presence of resistance, friction, or other forms of energy loss. Check FAQs
PD=Id2Ron
PD - Power Dissipated?Id - Drain Current in NMOS?Ron - ON Channel Resistance?

Total Power Dissipated in NMOS Example

With values
With units
Only example

Here is how the Total Power Dissipated in NMOS equation looks like with Values.

Here is how the Total Power Dissipated in NMOS equation looks like with Units.

Here is how the Total Power Dissipated in NMOS equation looks like.

1142.42Edit=239Edit20.02Edit
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Total Power Dissipated in NMOS Solution

Follow our step by step solution on how to calculate Total Power Dissipated in NMOS?

FIRST Step Consider the formula
PD=Id2Ron
Next Step Substitute values of Variables
PD=239mA20.02
Next Step Convert Units
PD=0.239A220Ω
Next Step Prepare to Evaluate
PD=0.239220
Next Step Evaluate
PD=1.14242W
LAST Step Convert to Output's Unit
PD=1142.42mW

Total Power Dissipated in NMOS Formula Elements

Variables
Power Dissipated
Power dissipated refers to the energy that is converted into heat and lost in a circuit or system due to the presence of resistance, friction, or other forms of energy loss.
Symbol: PD
Measurement: PowerUnit: mW
Note: Value should be greater than 0.
Drain Current in NMOS
Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Symbol: Id
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.
ON Channel Resistance
ON channel resistance is the channel-on resistance value between the drain and the source for any standard Mosfet circuit.
Symbol: Ron
Measurement: Electric ResistanceUnit:
Note: Value can be positive or negative.

Other formulas in N Channel Enhancement category

​Go Electron Drift Velocity of Channel in NMOS Transistor
vd=μnEL
​Go NMOS as Linear Resistance
rDS=LμnCoxWc(Vgs-VT)
​Go Current Entering Drain Terminal of NMOS given Gate Source Voltage
Id=k'nWcL((Vgs-VT)Vds-12Vds2)
​Go Current Entering Drain-Source in Triode Region of NMOS
Id=k'nWcL((Vgs-VT)Vds-12(Vds)2)

How to Evaluate Total Power Dissipated in NMOS?

Total Power Dissipated in NMOS evaluator uses Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance to evaluate the Power Dissipated, The total power dissipated in NMOS is equal to the product of square of drain current and drain-source on-channel resistance . It is denoted by Pd. Power Dissipated is denoted by PD symbol.

How to evaluate Total Power Dissipated in NMOS using this online evaluator? To use this online evaluator for Total Power Dissipated in NMOS, enter Drain Current in NMOS (Id) & ON Channel Resistance (Ron) and hit the calculate button.

FAQs on Total Power Dissipated in NMOS

What is the formula to find Total Power Dissipated in NMOS?
The formula of Total Power Dissipated in NMOS is expressed as Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance. Here is an example- 1.1E+6 = 0.239^2*20.
How to calculate Total Power Dissipated in NMOS?
With Drain Current in NMOS (Id) & ON Channel Resistance (Ron) we can find Total Power Dissipated in NMOS using the formula - Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance.
Can the Total Power Dissipated in NMOS be negative?
No, the Total Power Dissipated in NMOS, measured in Power cannot be negative.
Which unit is used to measure Total Power Dissipated in NMOS?
Total Power Dissipated in NMOS is usually measured using the Milliwatt[mW] for Power. Watt[mW], Kilowatt[mW], Microwatt[mW] are the few other units in which Total Power Dissipated in NMOS can be measured.
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