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Subthreshold Leakage through OFF Transistors Formula

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Subthreshold Current is subthreshold leakage through OFF transistors. Check FAQs

i st = (\frac{P st}{V bc}) - (i g + i con + i j)

i_st - Subthreshold Current?P_st - CMOS Static Power?V_bc - Base Collector Voltage?i_g - Gate Current?i_con - Contention Current?i_j - Junction Current?

Subthreshold Leakage through OFF Transistors Example

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Here is how the Subthreshold Leakage through OFF Transistors equation looks like with Values.

Here is how the Subthreshold Leakage through OFF Transistors equation looks like with Units.

Here is how the Subthreshold Leakage through OFF Transistors equation looks like.

1.6015 = (\frac{67.37}{2.02}) - (4.5 + 25.75 + 1.5)

1.6015mA = (\frac{67.37mW}{2.02V}) - (4.5mA + 25.75mA + 1.5mA)

1.6015 = (\frac{67.37}{2.02}) - (4.5 + 25.75 + 1.5)

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Subthreshold Leakage through OFF Transistors Solution

Follow our step by step solution on how to calculate Subthreshold Leakage through OFF Transistors?

FIRST Step Consider the formula

i st = (\frac{P st}{V bc}) - (i g + i con + i j)

Next Step Substitute values of Variables

∴

i st = (\frac{67.37mW}{2.02V}) - (4.5mA + 25.75mA + 1.5mA)

Next Step Convert Units

∴

i st = (\frac{0.0674W}{2.02V}) - (0.0045A + 0.0258A + 0.0015A)

Next Step Prepare to Evaluate

∴

i st = (\frac{0.0674}{2.02}) - (0.0045 + 0.0258 + 0.0015)

Next Step Evaluate

∴

i st = 0.00160148514851485A

Next Step Convert to Output's Unit

∴

i st = 1.60148514851485mA

LAST Step Rounding Answer

∴

i st = 1.6015mA

Subthreshold Leakage through OFF Transistors Formula Elements

Variables

Subthreshold Current

Subthreshold Current is subthreshold leakage through OFF transistors.

Symbol: i_st

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Subthreshold Current

CMOS Static Power

CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices.

Symbol: P_st

Measurement: PowerUnit: mW

Note: Value should be greater than 0.

Formulas to find CMOS Static Power

Base Collector Voltage

Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.

Symbol: V_bc

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Base Collector Voltage

Gate Current

Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.

Symbol: i_g

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Gate Current

Contention Current

Contention Current is defined as the contention current occuring in the ratioed circuits.

Symbol: i_con

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Contention Current

Junction Current

Junction Current is junction leakage from source/drain diffusions.

Symbol: i_j

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Junction Current

Other formulas in CMOS Power Metrics category

Go Activity Factor

α = \frac{P s}{C \cdot {V bc}^{2} \cdot f}

Go Switching Power

P s = α \cdot (C \cdot {V bc}^{2} \cdot f)

Go Dynamic Power in CMOS

P dyn = P sc + P s

Go Short-Circuit Power in CMOS

P sc = P dyn - P s

How to Evaluate Subthreshold Leakage through OFF Transistors?

Subthreshold Leakage through OFF Transistors evaluator uses Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current) to evaluate the Subthreshold Current, The Subthreshold leakage through OFF transistors formula is defined as subthreshold conduction or subthreshold leakage or subthreshold drain current, which is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. Subthreshold Current is denoted by i_st symbol.

How to evaluate Subthreshold Leakage through OFF Transistors using this online evaluator? To use this online evaluator for Subthreshold Leakage through OFF Transistors, enter CMOS Static Power (P_st), Base Collector Voltage (V_bc), Gate Current (i_g), Contention Current (i_con) & Junction Current (i_j) and hit the calculate button.

FAQs on Subthreshold Leakage through OFF Transistors

What is the formula to find Subthreshold Leakage through OFF Transistors?

The formula of Subthreshold Leakage through OFF Transistors is expressed as Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current). Here is an example- 22231.49 = (0.06737/2.02)-(0.0045+0.02575+0.0015).

How to calculate Subthreshold Leakage through OFF Transistors?

With CMOS Static Power (P_st), Base Collector Voltage (V_bc), Gate Current (i_g), Contention Current (i_con) & Junction Current (i_j) we can find Subthreshold Leakage through OFF Transistors using the formula - Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current).

Can the Subthreshold Leakage through OFF Transistors be negative?

No, the Subthreshold Leakage through OFF Transistors, measured in Electric Current cannot be negative.

Which unit is used to measure Subthreshold Leakage through OFF Transistors?

Subthreshold Leakage through OFF Transistors is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Subthreshold Leakage through OFF Transistors can be measured.

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Subthreshold Leakage through OFF Transistors Formula

Subthreshold Leakage through OFF Transistors Example

Subthreshold Leakage through OFF Transistors Solution

Subthreshold Leakage through OFF Transistors Formula Elements

Other formulas in CMOS Power Metrics category

How to Evaluate Subthreshold Leakage through OFF Transistors?

FAQs on Subthreshold Leakage through OFF Transistors

Variable Name