Substrate Bias Coefficient Formula

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Substrate Bias Coefficient is a parameter used in the modeling of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices. Check FAQs
γs=2[Charge-e][Permitivity-silicon]NACox
γs - Substrate Bias Coefficient?NA - Doping Concentration of Acceptor?Cox - Oxide Capacitance?[Charge-e] - Charge of electron?[Permitivity-silicon] - Permittivity of silicon?

Substrate Bias Coefficient Example

With values
With units
Only example

Here is how the Substrate Bias Coefficient equation looks like with Values.

Here is how the Substrate Bias Coefficient equation looks like with Units.

Here is how the Substrate Bias Coefficient equation looks like.

5.7E-7Edit=21.6E-1911.71.32Edit3.9Edit
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Substrate Bias Coefficient Solution

Follow our step by step solution on how to calculate Substrate Bias Coefficient?

FIRST Step Consider the formula
γs=2[Charge-e][Permitivity-silicon]NACox
Next Step Substitute values of Variables
γs=2[Charge-e][Permitivity-silicon]1.32electrons/cm³3.9F
Next Step Substitute values of Constants
γs=21.6E-19C11.71.32electrons/cm³3.9F
Next Step Convert Units
γs=21.6E-19C11.71.3E+6electrons/m³3.9F
Next Step Prepare to Evaluate
γs=21.6E-1911.71.3E+63.9
Next Step Evaluate
γs=5.70407834987726E-07
LAST Step Rounding Answer
γs=5.7E-7

Substrate Bias Coefficient Formula Elements

Variables
Constants
Functions
Substrate Bias Coefficient
Substrate Bias Coefficient is a parameter used in the modeling of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices.
Symbol: γs
Measurement: NAUnit: Unitless
Note: Value should be greater than 0.
Doping Concentration of Acceptor
Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.
Symbol: NA
Measurement: Electron DensityUnit: electrons/cm³
Note: Value should be greater than 0.
Oxide Capacitance
Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.
Symbol: Cox
Measurement: CapacitanceUnit: F
Note: Value should be greater than 0.
Charge of electron
Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.
Symbol: [Charge-e]
Value: 1.60217662E-19 C
Permittivity of silicon
Permittivity of silicon measures its ability to store electrical energy in an electric field, vital in semiconductor technology.
Symbol: [Permitivity-silicon]
Value: 11.7
sqrt
A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.
Syntax: sqrt(Number)

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How to Evaluate Substrate Bias Coefficient?

Substrate Bias Coefficient evaluator uses Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance to evaluate the Substrate Bias Coefficient, The Substrate Bias Coefficient formula is defined as a parameter used in the modeling of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices. Substrate Bias Coefficient is denoted by γs symbol.

How to evaluate Substrate Bias Coefficient using this online evaluator? To use this online evaluator for Substrate Bias Coefficient, enter Doping Concentration of Acceptor (NA) & Oxide Capacitance (Cox) and hit the calculate button.

FAQs on Substrate Bias Coefficient

What is the formula to find Substrate Bias Coefficient?
The formula of Substrate Bias Coefficient is expressed as Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance. Here is an example- 5.7E-7 = sqrt(2*[Charge-e]*[Permitivity-silicon]*1320000)/3.9.
How to calculate Substrate Bias Coefficient?
With Doping Concentration of Acceptor (NA) & Oxide Capacitance (Cox) we can find Substrate Bias Coefficient using the formula - Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance. This formula also uses Charge of electron, Permittivity of silicon constant(s) and Square Root Function function(s).
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