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Short Channel Saturation Current VLSI Formula

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Short Channel Saturation Current is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode. Check FAQs

I D(sat) = W c \cdot v d(sat) \cdot C oxide \cdot V Dsat

I_D(sat) - Short Channel Saturation Current?W_c - Channel Width?v_d(sat) - Saturation Electron Drift Velocity?C_oxide - Oxide Capacitance per Unit Area?V_Dsat - Saturation Drain Source Voltage?

Short Channel Saturation Current VLSI Example

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Here is how the Short Channel Saturation Current VLSI equation looks like with Values.

Here is how the Short Channel Saturation Current VLSI equation looks like with Units.

Here is how the Short Channel Saturation Current VLSI equation looks like.

527.25 = 2.5 \cdot 2E+7 \cdot 0.0703 \cdot 1.5

527.25µA = 2.5μm \cdot 2E+7cm/s \cdot 0.0703μF/cm² \cdot 1.5V

527.25 = 2.5 \cdot 2E+7 \cdot 0.0703 \cdot 1.5

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Short Channel Saturation Current VLSI Solution

Follow our step by step solution on how to calculate Short Channel Saturation Current VLSI?

FIRST Step Consider the formula

I D(sat) = W c \cdot v d(sat) \cdot C oxide \cdot V Dsat

Next Step Substitute values of Variables

∴

I D(sat) = 2.5μm \cdot 2E+7cm/s \cdot 0.0703μF/cm² \cdot 1.5V

Next Step Convert Units

∴

I D(sat) = 2.5E-6m \cdot 200000m/s \cdot 0.0007F/m² \cdot 1.5V

Next Step Prepare to Evaluate

∴

I D(sat) = 2.5E-6 \cdot 200000 \cdot 0.0007 \cdot 1.5

Next Step Evaluate

∴

I D(sat) = 0.00052725A

LAST Step Convert to Output's Unit

∴

I D(sat) = 527.25µA

Short Channel Saturation Current VLSI Formula Elements

Variables

Short Channel Saturation Current

Short Channel Saturation Current is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode.

Symbol: I_D(sat)

Measurement: Electric CurrentUnit: µA

Note: Value should be greater than 0.

Formulas to find Short Channel Saturation Current

Channel Width

Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure.

Symbol: W_c

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Formulas to find Channel Width

Saturation Electron Drift Velocity

Saturation Electron Drift Velocity is defined as the maximum velocity reached by electrons in a semiconductor material under the influence of an electric field.

Symbol: v_d(sat)

Measurement: SpeedUnit: cm/s

Note: Value should be greater than 0.

Formulas to find Saturation Electron Drift Velocity

Oxide Capacitance per Unit Area

Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.

Symbol: C_oxide

Measurement: Oxide Capacitance Per Unit AreaUnit: μF/cm²

Note: Value should be greater than 0.

Formulas to find Oxide Capacitance per Unit Area

Saturation Drain Source Voltage

Saturation Drain Source Voltage is defined as the voltage across the drain and source terminals of a MOSFET when the transistor is operating in saturation mode.

Symbol: V_Dsat

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Saturation Drain Source Voltage

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Go DIBL Coefficient

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How to Evaluate Short Channel Saturation Current VLSI?

Short Channel Saturation Current VLSI evaluator uses Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage to evaluate the Short Channel Saturation Current, The Short Channel Saturation Current VLSI formula is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode. Short Channel Saturation Current is denoted by I_D(sat) symbol.

How to evaluate Short Channel Saturation Current VLSI using this online evaluator? To use this online evaluator for Short Channel Saturation Current VLSI, enter Channel Width (W_c), Saturation Electron Drift Velocity (v_d(sat)), Oxide Capacitance per Unit Area (C_oxide) & Saturation Drain Source Voltage (V_Dsat) and hit the calculate button.

FAQs on Short Channel Saturation Current VLSI

What is the formula to find Short Channel Saturation Current VLSI?

The formula of Short Channel Saturation Current VLSI is expressed as Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage. Here is an example- 5.3E+8 = 2.5E-06*200000*0.000703*1.5.

How to calculate Short Channel Saturation Current VLSI?

With Channel Width (W_c), Saturation Electron Drift Velocity (v_d(sat)), Oxide Capacitance per Unit Area (C_oxide) & Saturation Drain Source Voltage (V_Dsat) we can find Short Channel Saturation Current VLSI using the formula - Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage.

Can the Short Channel Saturation Current VLSI be negative?

No, the Short Channel Saturation Current VLSI, measured in Electric Current cannot be negative.

Which unit is used to measure Short Channel Saturation Current VLSI?

Short Channel Saturation Current VLSI is usually measured using the Microampere[µA] for Electric Current. Ampere[µA], Milliampere[µA], Centiampere[µA] are the few other units in which Short Channel Saturation Current VLSI can be measured.

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Short Channel Saturation Current VLSI Formula

Short Channel Saturation Current VLSI Example

Short Channel Saturation Current VLSI Solution

Short Channel Saturation Current VLSI Formula Elements

Other formulas in VLSI Material Optimization category

How to Evaluate Short Channel Saturation Current VLSI?

FAQs on Short Channel Saturation Current VLSI

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