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Sheet Resistance of Layer Formula

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Sheet Resistance is the resistance of a square piece of a thin material with contacts made to two opposite sides of the square. Check FAQs

R s = \frac{1}{q \cdot μ n \cdot N d \cdot t}

R_s - Sheet Resistance?q - Charge?μ_n - Electron Doping Silicon Mobility?N_d - Equilibrium Concentration of N-Type?t - Thickness of Layer?

Sheet Resistance of Layer Example

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Here is how the Sheet Resistance of Layer equation looks like with Values.

Here is how the Sheet Resistance of Layer equation looks like with Units.

Here is how the Sheet Resistance of Layer equation looks like.

0.1164 = \frac{1}{5 \cdot 0.38 \cdot 45 \cdot 100.5}

0.1164Ω = \frac{1}{5mC \cdot 0.38cm²/V*s \cdot 451/cm³ \cdot 100.5cm}

0.1164 = \frac{1}{5 \cdot 0.38 \cdot 45 \cdot 100.5}

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Sheet Resistance of Layer Solution

Follow our step by step solution on how to calculate Sheet Resistance of Layer?

FIRST Step Consider the formula

R s = \frac{1}{q \cdot μ n \cdot N d \cdot t}

Next Step Substitute values of Variables

∴

R s = \frac{1}{5mC \cdot 0.38cm²/V*s \cdot 451/cm³ \cdot 100.5cm}

Next Step Convert Units

∴

R s = \frac{1}{0.005C \cdot 3.8E-5m²/V*s \cdot 4.5E+71/m³ \cdot 1.005m}

Next Step Prepare to Evaluate

∴

R s = \frac{1}{0.005 \cdot 3.8E-5 \cdot 4.5E+7 \cdot 1.005}

Next Step Evaluate

∴

R s = 0.116377178435309Ω

LAST Step Rounding Answer

∴

R s = 0.1164Ω

Sheet Resistance of Layer Formula Elements

Variables

Sheet Resistance

Sheet Resistance is the resistance of a square piece of a thin material with contacts made to two opposite sides of the square.

Symbol: R_s

Measurement: Electric ResistanceUnit: Ω

Note: Value should be greater than 0.

Formulas to find Sheet Resistance

Charge

Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.

Symbol: q

Measurement: Electric ChargeUnit: mC

Note: Value should be greater than 0.

Formulas to find Charge

Electron Doping Silicon Mobility

Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.

Symbol: μ_n

Measurement: MobilityUnit: cm²/V*s

Note: Value should be greater than 0.

Formulas to find Electron Doping Silicon Mobility

Equilibrium Concentration of N-Type

Equilibrium Concentration of N-Type is equal to the density of donor atoms because the electrons for conduction are solely given by the donor atom.

Symbol: N_d

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Equilibrium Concentration of N-Type

Thickness of Layer

Thickness of Layer is often used for manufacturing casted parts to ensure that wall structure is designed with just the right amount of material.

Symbol: t

Measurement: LengthUnit: cm

Note: Value should be greater than 0.

Formulas to find Thickness of Layer

Other formulas in Bipolar IC Fabrication category

Go Impurity with Intrinsic Concentration

n i = \sqrt{\frac{n e \cdot p}{t o}}

Go Ohmic Conductivity of Impurity

σ = q \cdot (μ n \cdot n e + μ p \cdot p)

Go Breakout Voltage of Collector Emitter

V ce = \frac{V cb}{{(i g)}^{\frac{1}{n}}}

Go Conductivity of N-Type

σ = q \cdot (μ n \cdot N d + μ p \cdot (\frac{{n i}^{2}}{N d}))

How to Evaluate Sheet Resistance of Layer?

Sheet Resistance of Layer evaluator uses Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer) to evaluate the Sheet Resistance, The Sheet Resistance of Layers formula is influenced by factors such as the resistivity of the material, its thickness, and the area through which the current passes. In semiconductor processing, it's essential to control and optimize the sheet resistance to achieve desired electrical characteristics in different layers of the semiconductor devices, like the metal interconnect layers or polysilicon gates in transistors. Sheet Resistance is denoted by R_s symbol.

How to evaluate Sheet Resistance of Layer using this online evaluator? To use this online evaluator for Sheet Resistance of Layer, enter Charge (q), Electron Doping Silicon Mobility (μ_n), Equilibrium Concentration of N-Type (N_d) & Thickness of Layer (t) and hit the calculate button.

FAQs on Sheet Resistance of Layer

What is the formula to find Sheet Resistance of Layer?

The formula of Sheet Resistance of Layer is expressed as Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer). Here is an example- 0.116959 = 1/(0.005*3.8E-05*45000000*1.005).

How to calculate Sheet Resistance of Layer?

With Charge (q), Electron Doping Silicon Mobility (μ_n), Equilibrium Concentration of N-Type (N_d) & Thickness of Layer (t) we can find Sheet Resistance of Layer using the formula - Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer).

Can the Sheet Resistance of Layer be negative?

No, the Sheet Resistance of Layer, measured in Electric Resistance cannot be negative.

Which unit is used to measure Sheet Resistance of Layer?

Sheet Resistance of Layer is usually measured using the Ohm[Ω] for Electric Resistance. Megohm[Ω], Microhm[Ω], Volt per Ampere[Ω] are the few other units in which Sheet Resistance of Layer can be measured.

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Sheet Resistance of Layer Formula

Sheet Resistance of Layer Example

Sheet Resistance of Layer Solution

Sheet Resistance of Layer Formula Elements

Other formulas in Bipolar IC Fabrication category

How to Evaluate Sheet Resistance of Layer?

FAQs on Sheet Resistance of Layer

Variable Name