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Saturation Voltage of IGBT Formula

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Collector to Emitter Saturation Voltage (IGBT) of an insulated-gate bipolar transistor is the voltage drop across the IGBT when it is turned on and conducting current. Check FAQs

V c-e(sat)(igbt) = V B-E(pnp)(igbt) + I d(igbt) \cdot (R s(igbt) + R ch(igbt))

V_{c-e(sat)(igbt)} - Collector to Emitter Saturation Voltage (IGBT)?V_{B-E(pnp)(igbt)} - Base Emitter Voltage PNP IGBT?I_d(igbt) - Drain Current (IGBT)?R_s(igbt) - Conductivity Resistance IGBT?R_ch(igbt) - N Channel Resistance (IGBT)?

Saturation Voltage of IGBT Example

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Here is how the Saturation Voltage of IGBT equation looks like with Values.

Here is how the Saturation Voltage of IGBT equation looks like with Units.

Here is how the Saturation Voltage of IGBT equation looks like.

1222.25 = 2.15 + 105 \cdot (1.03 + 10.59)

1222.25V = 2.15V + 105mA \cdot (1.03kΩ + 10.59kΩ)

1222.25 = 2.15 + 105 \cdot (1.03 + 10.59)

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Saturation Voltage of IGBT Solution

Follow our step by step solution on how to calculate Saturation Voltage of IGBT?

FIRST Step Consider the formula

V c-e(sat)(igbt) = V B-E(pnp)(igbt) + I d(igbt) \cdot (R s(igbt) + R ch(igbt))

Next Step Substitute values of Variables

∴

V c-e(sat)(igbt) = 2.15V + 105mA \cdot (1.03kΩ + 10.59kΩ)

Next Step Convert Units

∴

V c-e(sat)(igbt) = 2.15V + 0.105A \cdot (1030Ω + 10590Ω)

Next Step Prepare to Evaluate

∴

V c-e(sat)(igbt) = 2.15 + 0.105 \cdot (1030 + 10590)

LAST Step Evaluate

∴

V c-e(sat)(igbt) = 1222.25V

Saturation Voltage of IGBT Formula Elements

Variables

Collector to Emitter Saturation Voltage (IGBT)

Collector to Emitter Saturation Voltage (IGBT) of an insulated-gate bipolar transistor is the voltage drop across the IGBT when it is turned on and conducting current.

Symbol: V_{c-e(sat)(igbt)}

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Collector to Emitter Saturation Voltage (IGBT)

Base Emitter Voltage PNP IGBT

Base Emitter Voltage PNP IGBT. An IGBT is a hybrid device that combines the advantages of a MOSFET and a BJT.

Symbol: V_{B-E(pnp)(igbt)}

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Base Emitter Voltage PNP IGBT

Drain Current (IGBT)

Drain Current (IGBT) is the current that flow through the drain junction of the MOSFET and IGBT.

Symbol: I_d(igbt)

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Drain Current (IGBT)

Conductivity Resistance IGBT

Conductivity Resistance IGBT is the resistance when an IGBT is turned on and conducting current.

Symbol: R_s(igbt)

Measurement: Electric ResistanceUnit: kΩ

Note: Value should be greater than 0.

Formulas to find Conductivity Resistance IGBT

N Channel Resistance (IGBT)

N Channel Resistance (IGBT) is the resistance of the semiconductor material in the device when the IGBT is turned on.

Symbol: R_ch(igbt)

Measurement: Electric ResistanceUnit: kΩ

Note: Value should be greater than 0.

Formulas to find N Channel Resistance (IGBT)

Other formulas in IGBT category

Go Voltage Drop in IGBT in ON-State

V ON(igbt) = i f(igbt) \cdot R ch(igbt) + i f(igbt) \cdot R d(igbt) + V j1(igbt)

Go IGBT Turn OFF Time

T off(igbt) = T dl(igbt) + t f1(igbt) + t f2(igbt)

Go Emitter Current of IGBT

I e(igbt) = I h(igbt) + i e(igbt)

Go Input Capacitance of IGBT

C in(igbt) = C (g-e)(igbt) + C (g-c)(igbt)

How to Evaluate Saturation Voltage of IGBT?

Saturation Voltage of IGBT evaluator uses Collector to Emitter Saturation Voltage (IGBT) = Base Emitter Voltage PNP IGBT+Drain Current (IGBT)*(Conductivity Resistance IGBT+N Channel Resistance (IGBT)) to evaluate the Collector to Emitter Saturation Voltage (IGBT), Saturation Voltage of IGBT is the voltage drop across the device when it is in the "on" or conducting state. This voltage drop occurs due to the IGBT's inherent characteristics and is typically lower than the voltage drop across a standard bipolar junction transistor (BJT). The saturation voltage of an IGBT is influenced by several factors, including the IGBT's current rating, temperature, and the specific model or manufacturer. Collector to Emitter Saturation Voltage (IGBT) is denoted by V_{c-e(sat)(igbt)} symbol.

How to evaluate Saturation Voltage of IGBT using this online evaluator? To use this online evaluator for Saturation Voltage of IGBT, enter Base Emitter Voltage PNP IGBT (V_{B-E(pnp)(igbt)}), Drain Current (IGBT) (I_d(igbt)), Conductivity Resistance IGBT (R_s(igbt)) & N Channel Resistance (IGBT) (R_ch(igbt)) and hit the calculate button.

FAQs on Saturation Voltage of IGBT

What is the formula to find Saturation Voltage of IGBT?

The formula of Saturation Voltage of IGBT is expressed as Collector to Emitter Saturation Voltage (IGBT) = Base Emitter Voltage PNP IGBT+Drain Current (IGBT)*(Conductivity Resistance IGBT+N Channel Resistance (IGBT)). Here is an example- 1.1E+6 = 2.15+105*(1.03+10590).

How to calculate Saturation Voltage of IGBT?

With Base Emitter Voltage PNP IGBT (V_{B-E(pnp)(igbt)}), Drain Current (IGBT) (I_d(igbt)), Conductivity Resistance IGBT (R_s(igbt)) & N Channel Resistance (IGBT) (R_ch(igbt)) we can find Saturation Voltage of IGBT using the formula - Collector to Emitter Saturation Voltage (IGBT) = Base Emitter Voltage PNP IGBT+Drain Current (IGBT)*(Conductivity Resistance IGBT+N Channel Resistance (IGBT)).

Can the Saturation Voltage of IGBT be negative?

No, the Saturation Voltage of IGBT, measured in Electric Potential cannot be negative.

Which unit is used to measure Saturation Voltage of IGBT?

Saturation Voltage of IGBT is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Saturation Voltage of IGBT can be measured.

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Saturation Voltage of IGBT Formula

Saturation Voltage of IGBT Example

Saturation Voltage of IGBT Solution

Saturation Voltage of IGBT Formula Elements

Other formulas in IGBT category

How to Evaluate Saturation Voltage of IGBT?

FAQs on Saturation Voltage of IGBT

Variable Name