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Saturation Current using Doping Concentration Formula

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Saturation Current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another. Check FAQs

I sat = \frac{A E \cdot [Charge-e] \cdot D n \cdot {(n i1)}^{2}}{W base \cdot N B}

I_sat - Saturation Current?A_E - Cross-section Area of Base-Emitter Junction?D_n - Electron Diffusivity?n_i1 - Intrinsic Carrier Concentration?W_base - Width of Base Junction?N_B - Doping Concentration of Base?[Charge-e] - Charge of electron?

Saturation Current using Doping Concentration Example

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Here is how the Saturation Current using Doping Concentration equation looks like with Values.

Here is how the Saturation Current using Doping Concentration equation looks like with Units.

Here is how the Saturation Current using Doping Concentration equation looks like.

2.7E-12 = \frac{8 \cdot 1.6E-19 \cdot 0.8 \cdot {(100000)}^{2}}{0.002 \cdot 19}

2.7E-12mA = \frac{8cm² \cdot 1.6E-19C \cdot 0.8cm²/s \cdot {(1000001/m³)}^{2}}{0.002m \cdot 191/m³}

2.7E-12 = \frac{8 \cdot 1.6E-19 \cdot 0.8 \cdot {(100000)}^{2}}{0.002 \cdot 19}

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Saturation Current using Doping Concentration Solution

Follow our step by step solution on how to calculate Saturation Current using Doping Concentration?

FIRST Step Consider the formula

I sat = \frac{A E \cdot [Charge-e] \cdot D n \cdot {(n i1)}^{2}}{W base \cdot N B}

Next Step Substitute values of Variables

∴

I sat = \frac{8cm² \cdot [Charge-e] \cdot 0.8cm²/s \cdot {(1000001/m³)}^{2}}{0.002m \cdot 191/m³}

Next Step Substitute values of Constants

∴

I sat = \frac{8cm² \cdot 1.6E-19C \cdot 0.8cm²/s \cdot {(1000001/m³)}^{2}}{0.002m \cdot 191/m³}

Next Step Convert Units

∴

I sat = \frac{0.0008m² \cdot 1.6E-19C \cdot 8E-5m²/s \cdot {(1000001/m³)}^{2}}{0.002m \cdot 191/m³}

Next Step Prepare to Evaluate

∴

I sat = \frac{0.0008 \cdot 1.6E-19 \cdot 8E-5 \cdot {(100000)}^{2}}{0.002 \cdot 19}

Next Step Evaluate

∴

I sat = 2.69840272842105E-15A

Next Step Convert to Output's Unit

∴

I sat = 2.69840272842105E-12mA

LAST Step Rounding Answer

∴

I sat = 2.7E-12mA

Saturation Current using Doping Concentration Formula Elements

Variables

Constants

Saturation Current

Saturation Current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another.

Symbol: I_sat

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Saturation Current

Cross-section Area of Base-Emitter Junction

The Cross-section area of base-emitter junction is the width in the direction perpendicular to the page.

Symbol: A_E

Measurement: AreaUnit: cm²

Note: Value can be positive or negative.

Formulas to find Cross-section Area of Base-Emitter Junction

Electron Diffusivity

Electron Diffusivity is the diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (holes and/or electrons).

Symbol: D_n

Measurement: DiffusivityUnit: cm²/s

Note: Value can be positive or negative.

Formulas to find Electron Diffusivity

Intrinsic Carrier Concentration

Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

Symbol: n_i1

Measurement: Carrier ConcentrationUnit: 1/m³

Note: Value can be positive or negative.

Formulas to find Intrinsic Carrier Concentration

Width of Base Junction

Width of Base junction is the parameter which signifies how wide is the base junction of any analog electronics element.

Symbol: W_base

Measurement: LengthUnit: m

Note: Value should be greater than 0.

Formulas to find Width of Base Junction

Doping Concentration of Base

The Doping concentration of Base is the number of impurities added to the base.

Symbol: N_B

Measurement: Carrier ConcentrationUnit: 1/m³

Note: Value should be greater than 0.

Formulas to find Doping Concentration of Base

Charge of electron

Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.

Symbol: [Charge-e]

Value: 1.60217662E-19 C

Other formulas in Base Current category

Go Base Current 1 of BJT

I B = \frac{I c}{β}

Go Base Current 2 of BJT

I B = (\frac{I sat}{β}) \cdot (e^{\frac{V BE}{V t}})

Go Base Current using Saturation Current in DC

I B = (\frac{I sat}{β}) \cdot e^{\frac{V BC}{V t}} + e s \cdot e^{\frac{V BC}{V t}}

Go Drain Current given Device Parameter

I d = \frac{1}{2} \cdot G m \cdot WL \cdot {(V ov - V th)}^{2} \cdot (1 + V A \cdot V DS)

How to Evaluate Saturation Current using Doping Concentration?

Saturation Current using Doping Concentration evaluator uses Saturation Current = (Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(Intrinsic Carrier Concentration)^2)/(Width of Base Junction*Doping Concentration of Base) to evaluate the Saturation Current, The Saturation current using doping concentration is the point where a further increase in base current will not result in a corresponding increase in collector current. Saturation Current is denoted by I_sat symbol.

How to evaluate Saturation Current using Doping Concentration using this online evaluator? To use this online evaluator for Saturation Current using Doping Concentration, enter Cross-section Area of Base-Emitter Junction (A_E), Electron Diffusivity (D_n), Intrinsic Carrier Concentration (n_i1), Width of Base Junction (W_base) & Doping Concentration of Base (N_B) and hit the calculate button.

FAQs on Saturation Current using Doping Concentration

What is the formula to find Saturation Current using Doping Concentration?

The formula of Saturation Current using Doping Concentration is expressed as Saturation Current = (Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(Intrinsic Carrier Concentration)^2)/(Width of Base Junction*Doping Concentration of Base). Here is an example- 2.7E-9 = (0.0008*[Charge-e]*8E-05*(100000)^2)/(0.002*19).

How to calculate Saturation Current using Doping Concentration?

With Cross-section Area of Base-Emitter Junction (A_E), Electron Diffusivity (D_n), Intrinsic Carrier Concentration (n_i1), Width of Base Junction (W_base) & Doping Concentration of Base (N_B) we can find Saturation Current using Doping Concentration using the formula - Saturation Current = (Cross-section Area of Base-Emitter Junction*[Charge-e]*Electron Diffusivity*(Intrinsic Carrier Concentration)^2)/(Width of Base Junction*Doping Concentration of Base). This formula also uses Charge of electron constant(s).

Can the Saturation Current using Doping Concentration be negative?

No, the Saturation Current using Doping Concentration, measured in Electric Current cannot be negative.

Which unit is used to measure Saturation Current using Doping Concentration?

Saturation Current using Doping Concentration is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Saturation Current using Doping Concentration can be measured.

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Saturation Current using Doping Concentration Formula

Saturation Current using Doping Concentration Example

Saturation Current using Doping Concentration Solution

Saturation Current using Doping Concentration Formula Elements

Other formulas in Base Current category

How to Evaluate Saturation Current using Doping Concentration?

FAQs on Saturation Current using Doping Concentration

Variable Name