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Saturation Current in Transistor Formula

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Saturation Current refers to the maximum current that can flow through the transistor when it is fully turned on. Check FAQs

I sat = \frac{q \cdot A \cdot D n \cdot {n i}^{2}}{Q b}

I_sat - Saturation Current?q - Charge?A - Emitter Base Junction Area?D_n - Effective Diffusion?n_i - Intrinsic Concentration?Q_b - Total Impurity?

Saturation Current in Transistor Example

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With units

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Here is how the Saturation Current in Transistor equation looks like with Values.

Here is how the Saturation Current in Transistor equation looks like with Units.

Here is how the Saturation Current in Transistor equation looks like.

2.1175 = \frac{5 \cdot 1.75 \cdot 0.5 \cdot {1.32}^{2}}{3.6E+9}

2.1175A = \frac{5mC \cdot 1.75cm² \cdot 0.5 \cdot {1.321/cm³}^{2}}{3.6E+9cm²}

2.1175 = \frac{5 \cdot 1.75 \cdot 0.5 \cdot {1.32}^{2}}{3.6E+9}

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Integrated Circuits (IC) » fx Saturation Current in Transistor

Saturation Current in Transistor Solution

Follow our step by step solution on how to calculate Saturation Current in Transistor?

FIRST Step Consider the formula

I sat = \frac{q \cdot A \cdot D n \cdot {n i}^{2}}{Q b}

Next Step Substitute values of Variables

∴

I sat = \frac{5mC \cdot 1.75cm² \cdot 0.5 \cdot {1.321/cm³}^{2}}{3.6E+9cm²}

Next Step Convert Units

∴

I sat = \frac{0.005C \cdot 0.0002m² \cdot 0.5 \cdot {1.3E+61/m³}^{2}}{360000m²}

Next Step Prepare to Evaluate

∴

I sat = \frac{0.005 \cdot 0.0002 \cdot 0.5 \cdot {1.3E+6}^{2}}{360000}

LAST Step Evaluate

∴

I sat = 2.1175A

Saturation Current in Transistor Formula Elements

Variables

Saturation Current

Saturation Current refers to the maximum current that can flow through the transistor when it is fully turned on.

Symbol: I_sat

Measurement: Electric CurrentUnit: A

Note: Value can be positive or negative.

Formulas to find Saturation Current

Open Variable

Charge

Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.

Symbol: q

Measurement: Electric ChargeUnit: mC

Note: Value should be greater than 0.

Formulas to find Charge

Open Variable

Emitter Base Junction Area

Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor.

Symbol: A

Measurement: AreaUnit: cm²

Note: Value should be greater than 0.

Formulas to find Emitter Base Junction Area

Open Variable

Effective Diffusion

The effective diffusion is a parameter related to the diffusion process of carriers and is influenced by material properties and the geometry of the semiconductor junction.

Symbol: D_n

Measurement: NAUnit: Unitless

Note: Value should be greater than 0.

Formulas to find Effective Diffusion

Open Variable

Intrinsic Concentration

Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

Symbol: n_i

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Intrinsic Concentration

Open Variable

Total Impurity

Total Impurity defines the impurities which is mix at atom per unit area in a base or the amount of impurity added to an intrinsic semiconductor varies its level of conductivity.

Symbol: Q_b

Measurement: AreaUnit: cm²

Note: Value should be greater than 0.

Formulas to find Total Impurity

Open Variable

Other formulas in Bipolar IC Fabrication category

Go Impurity with Intrinsic Concentration

n i = \sqrt{\frac{n e \cdot p}{t o}}

Go Ohmic Conductivity of Impurity

σ = q \cdot (μ n \cdot n e + μ p \cdot p)

Go Breakout Voltage of Collector Emitter

V ce = \frac{V cb}{{(i g)}^{\frac{1}{n}}}

Go Conductivity of N-Type

σ = q \cdot (μ n \cdot N d + μ p \cdot (\frac{{n i}^{2}}{N d}))

See More

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How to Evaluate Saturation Current in Transistor?

Saturation Current in Transistor evaluator uses Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity to evaluate the Saturation Current, The Saturation Current in Transistor formula is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. Saturation Current is denoted by I_sat symbol.

How to evaluate Saturation Current in Transistor using this online evaluator? To use this online evaluator for Saturation Current in Transistor, enter Charge (q), Emitter Base Junction Area (A), Effective Diffusion (D_n), Intrinsic Concentration (n_i) & Total Impurity (Q_b) and hit the calculate button.

FAQs on Saturation Current in Transistor

What is the formula to find Saturation Current in Transistor?

The formula of Saturation Current in Transistor is expressed as Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity. Here is an example- 2.1175 = (0.005*0.000175*0.5*1320000^2)/360000.

How to calculate Saturation Current in Transistor?

With Charge (q), Emitter Base Junction Area (A), Effective Diffusion (D_n), Intrinsic Concentration (n_i) & Total Impurity (Q_b) we can find Saturation Current in Transistor using the formula - Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity.

Can the Saturation Current in Transistor be negative?

Yes, the Saturation Current in Transistor, measured in Electric Current can be negative.

Which unit is used to measure Saturation Current in Transistor?

Saturation Current in Transistor is usually measured using the Ampere[A] for Electric Current. Milliampere[A], Microampere[A], Centiampere[A] are the few other units in which Saturation Current in Transistor can be measured.

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