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Pull down Current in Saturation Region Formula

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Saturation Region Pull Down Current is the current through the resistor is when a pull-down resistor is used with an N-channel MOSFET in Saturation mode. Check FAQs

I D(sat) = \sum (x, 0, n, (μ n \cdot \frac{C ox}{2}) \cdot (\frac{W}{L}) \cdot {(V GS - V T)}^{2})

I_D(sat) - Saturation Region Pull Down Current?n - Number of Parallel Driver Transistors?μ_n - Electron Mobility?C_ox - Oxide Capacitance?W - Channel Width?L - Channel Length?V_GS - Gate Source Voltage?V_T - Threshold Voltage?

Pull down Current in Saturation Region Example

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Here is how the Pull down Current in Saturation Region equation looks like with Values.

Here is how the Pull down Current in Saturation Region equation looks like with Units.

Here is how the Pull down Current in Saturation Region equation looks like.

101550.1189 = \sum (x, 0, 11, (9.92 \cdot \frac{3.9}{2}) \cdot (\frac{2.678}{3.45}) \cdot {(29.65 - 5.91)}^{2})

101550.1189A = \sum (x, 0, 11, (9.92m²/V*s \cdot \frac{3.9F}{2}) \cdot (\frac{2.678m}{3.45m}) \cdot {(29.65V - 5.91V)}^{2})

101550.1189 = \sum (x, 0, 11, (9.92 \cdot \frac{3.9}{2}) \cdot (\frac{2.678}{3.45}) \cdot {(29.65 - 5.91)}^{2})

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Pull down Current in Saturation Region Solution

Follow our step by step solution on how to calculate Pull down Current in Saturation Region?

FIRST Step Consider the formula

I D(sat) = \sum (x, 0, n, (μ n \cdot \frac{C ox}{2}) \cdot (\frac{W}{L}) \cdot {(V GS - V T)}^{2})

Next Step Substitute values of Variables

∴

I D(sat) = \sum (x, 0, 11, (9.92m²/V*s \cdot \frac{3.9F}{2}) \cdot (\frac{2.678m}{3.45m}) \cdot {(29.65V - 5.91V)}^{2})

Next Step Prepare to Evaluate

∴

I D(sat) = \sum (x, 0, 11, (9.92 \cdot \frac{3.9}{2}) \cdot (\frac{2.678}{3.45}) \cdot {(29.65 - 5.91)}^{2})

Next Step Evaluate

∴

I D(sat) = 101550.118939559A

LAST Step Rounding Answer

∴

I D(sat) = 101550.1189A

Pull down Current in Saturation Region Formula Elements

Variables

Functions

Saturation Region Pull Down Current

Saturation Region Pull Down Current is the current through the resistor is when a pull-down resistor is used with an N-channel MOSFET in Saturation mode.

Symbol: I_D(sat)

Measurement: Electric CurrentUnit: A

Note: Value can be positive or negative.

Formulas to find Saturation Region Pull Down Current

Number of Parallel Driver Transistors

Number of Parallel Driver Transistors refers to the number of parallel driver transistors in the circuit.

Symbol: n

Measurement: NAUnit: Unitless

Note: Value can be positive or negative.

Formulas to find Number of Parallel Driver Transistors

Electron Mobility

Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage.

Symbol: μ_n

Measurement: MobilityUnit: m²/V*s

Note: Value can be positive or negative.

Formulas to find Electron Mobility

Oxide Capacitance

Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.

Symbol: C_ox

Measurement: CapacitanceUnit: F

Note: Value should be greater than 0.

Formulas to find Oxide Capacitance

Channel Width

Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.

Symbol: W

Measurement: LengthUnit: m

Note: Value can be positive or negative.

Formulas to find Channel Width

Channel Length

Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance.

Symbol: L

Measurement: LengthUnit: m

Note: Value can be positive or negative.

Formulas to find Channel Length

Gate Source Voltage

Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET.

Symbol: V_GS

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Gate Source Voltage

Threshold Voltage

Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow.

Symbol: V_T

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Threshold Voltage

sum

Summation or sigma (∑) notation is a method used to write out a long sum in a concise way.

Syntax: sum(i, from, to, expr)

Other formulas in MOS Transistor category

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Go Equivalent Large Signal Junction Capacitance

C eq(sw) = P \cdot C jsw \cdot K eq(sw)

How to Evaluate Pull down Current in Saturation Region?

Pull down Current in Saturation Region evaluator uses Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2) to evaluate the Saturation Region Pull Down Current, The Pull down Current in Saturation Region formula is defined as the current through the resistor is when a pull-down resistor is used with an N-channel MOSFET in Saturation mode. Saturation Region Pull Down Current is denoted by I_D(sat) symbol.

How to evaluate Pull down Current in Saturation Region using this online evaluator? To use this online evaluator for Pull down Current in Saturation Region, enter Number of Parallel Driver Transistors (n), Electron Mobility (μ_n), Oxide Capacitance (C_ox), Channel Width (W), Channel Length (L), Gate Source Voltage (V_GS) & Threshold Voltage (V_T) and hit the calculate button.

FAQs on Pull down Current in Saturation Region

What is the formula to find Pull down Current in Saturation Region?

The formula of Pull down Current in Saturation Region is expressed as Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2). Here is an example- 101550.1 = sum(x,0,11,(9.92*3.9/2)*(2.678/3.45)*(29.65-5.91)^2).

How to calculate Pull down Current in Saturation Region?

With Number of Parallel Driver Transistors (n), Electron Mobility (μ_n), Oxide Capacitance (C_ox), Channel Width (W), Channel Length (L), Gate Source Voltage (V_GS) & Threshold Voltage (V_T) we can find Pull down Current in Saturation Region using the formula - Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2). This formula also uses Summation Notation (sum) function(s).

Can the Pull down Current in Saturation Region be negative?

Yes, the Pull down Current in Saturation Region, measured in Electric Current can be negative.

Which unit is used to measure Pull down Current in Saturation Region?

Pull down Current in Saturation Region is usually measured using the Ampere[A] for Electric Current. Milliampere[A], Microampere[A], Centiampere[A] are the few other units in which Pull down Current in Saturation Region can be measured.

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Pull down Current in Saturation Region Formula

Pull down Current in Saturation Region Example

Pull down Current in Saturation Region Solution

Pull down Current in Saturation Region Formula Elements

Other formulas in MOS Transistor category

How to Evaluate Pull down Current in Saturation Region?

FAQs on Pull down Current in Saturation Region

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