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Process Transconductance Parameter of PMOS Formula

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The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor. Check FAQs

k' p = μ p \cdot C ox

k'_p - Process Transconductance Parameter in PMOS?μ_p - Mobility of Holes in Channel?C_ox - Oxide Capacitance?

Process Transconductance Parameter of PMOS Example

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Here is how the Process Transconductance Parameter of PMOS equation looks like with Values.

Here is how the Process Transconductance Parameter of PMOS equation looks like with Units.

Here is how the Process Transconductance Parameter of PMOS equation looks like.

2.128 = 2.66 \cdot 0.0008

2.128mS = 2.66m²/V*s \cdot 0.0008F

2.128 = 2.66 \cdot 0.0008

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Process Transconductance Parameter of PMOS Solution

Follow our step by step solution on how to calculate Process Transconductance Parameter of PMOS?

FIRST Step Consider the formula

k' p = μ p \cdot C ox

Next Step Substitute values of Variables

∴

k' p = 2.66m²/V*s \cdot 0.0008F

Next Step Prepare to Evaluate

∴

k' p = 2.66 \cdot 0.0008

Next Step Evaluate

∴

k' p = 0.002128S

LAST Step Convert to Output's Unit

∴

k' p = 2.128mS

Process Transconductance Parameter of PMOS Formula Elements

Variables

Process Transconductance Parameter in PMOS

The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.

Symbol: k'_p

Measurement: Electric ConductanceUnit: mS

Note: Value can be positive or negative.

Formulas to find Process Transconductance Parameter in PMOS

Mobility of Holes in Channel

Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.

Symbol: μ_p

Measurement: MobilityUnit: m²/V*s

Note: Value can be positive or negative.

Formulas to find Mobility of Holes in Channel

Oxide Capacitance

Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

Symbol: C_ox

Measurement: CapacitanceUnit: F

Note: Value can be positive or negative.

Formulas to find Oxide Capacitance

Other formulas in P Channel Enhancement category

Go Drain Current in Triode Region of PMOS Transistor

I d = k' p \cdot WL \cdot ((V GS - mod \underset{̲}{u} s (V T)) \cdot V DS - \frac{1}{2} \cdot {(V DS)}^{2})

Go Drain Current in Triode Region of PMOS Transistor given Vsd

I d = k' p \cdot WL \cdot (mod \underset{̲}{u} s (V ov) - \frac{1}{2} \cdot V DS) \cdot V DS

Go Drain Current in Saturation Region of PMOS Transistor

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2}

Go Drain Current in Saturation Region of PMOS Transistor given Vov

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V ov)}^{2}

How to Evaluate Process Transconductance Parameter of PMOS?

Process Transconductance Parameter of PMOS evaluator uses Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance to evaluate the Process Transconductance Parameter in PMOS, The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance. Process Transconductance Parameter in PMOS is denoted by k'_p symbol.

How to evaluate Process Transconductance Parameter of PMOS using this online evaluator? To use this online evaluator for Process Transconductance Parameter of PMOS, enter Mobility of Holes in Channel (μ_p) & Oxide Capacitance (C_ox) and hit the calculate button.

FAQs on Process Transconductance Parameter of PMOS

What is the formula to find Process Transconductance Parameter of PMOS?

The formula of Process Transconductance Parameter of PMOS is expressed as Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance. Here is an example- 2128 = 2.66*0.0008.

How to calculate Process Transconductance Parameter of PMOS?

With Mobility of Holes in Channel (μ_p) & Oxide Capacitance (C_ox) we can find Process Transconductance Parameter of PMOS using the formula - Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance.

Can the Process Transconductance Parameter of PMOS be negative?

Yes, the Process Transconductance Parameter of PMOS, measured in Electric Conductance can be negative.

Which unit is used to measure Process Transconductance Parameter of PMOS?

Process Transconductance Parameter of PMOS is usually measured using the Millisiemens[mS] for Electric Conductance. Siemens[mS], Megasiemens[mS], Mho[mS] are the few other units in which Process Transconductance Parameter of PMOS can be measured.

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Process Transconductance Parameter of PMOS Formula

Process Transconductance Parameter of PMOS Example

Process Transconductance Parameter of PMOS Solution

Process Transconductance Parameter of PMOS Formula Elements

Other formulas in P Channel Enhancement category

How to Evaluate Process Transconductance Parameter of PMOS?

FAQs on Process Transconductance Parameter of PMOS

Variable Name