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Positive Voltage given Device Parameter in MOSFET Formula

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Input current can refer to the electric current that is flowing into an electrical device or circuit. This current can be AC or DC depending on the device and the power source. Check FAQs

I in = V gs \cdot (ω \cdot (C sg + C gd))

I_in - Input Current?V_gs - Gate-Source Voltage?ω - Angular Frequency?C_sg - Source Gate Capacitance?C_gd - Gate-Drain Capacitance?

Positive Voltage given Device Parameter in MOSFET Example

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Here is how the Positive Voltage given Device Parameter in MOSFET equation looks like with Values.

Here is how the Positive Voltage given Device Parameter in MOSFET equation looks like with Units.

Here is how the Positive Voltage given Device Parameter in MOSFET equation looks like.

2.0011 = 4 \cdot (33 \cdot (8.16 + 7))

2.0011mA = 4V \cdot (33rad/s \cdot (8.16μF + 7μF))

2.0011 = 4 \cdot (33 \cdot (8.16 + 7))

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Positive Voltage given Device Parameter in MOSFET Solution

Follow our step by step solution on how to calculate Positive Voltage given Device Parameter in MOSFET?

FIRST Step Consider the formula

I in = V gs \cdot (ω \cdot (C sg + C gd))

Next Step Substitute values of Variables

∴

I in = 4V \cdot (33rad/s \cdot (8.16μF + 7μF))

Next Step Convert Units

∴

I in = 4V \cdot (33rad/s \cdot (8.2E-6F + 7E-6F))

Next Step Prepare to Evaluate

∴

I in = 4 \cdot (33 \cdot (8.2E-6 + 7E-6))

Next Step Evaluate

∴

I in = 0.00200112A

Next Step Convert to Output's Unit

∴

I in = 2.00112mA

LAST Step Rounding Answer

∴

I in = 2.0011mA

Positive Voltage given Device Parameter in MOSFET Formula Elements

Variables

Input Current

Input current can refer to the electric current that is flowing into an electrical device or circuit. This current can be AC or DC depending on the device and the power source.

Symbol: I_in

Measurement: Electric CurrentUnit: mA

Note: Value can be positive or negative.

Formulas to find Input Current

Gate-Source Voltage

Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.

Symbol: V_gs

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Gate-Source Voltage

Angular Frequency

Angular Frequency of wave refers to the angular displacement per unit time. It is a scalar measure of rotation rate.

Symbol: ω

Measurement: Angular FrequencyUnit: rad/s

Note: Value can be positive or negative.

Formulas to find Angular Frequency

Source Gate Capacitance

The source gate capacitance is a measure of the capacitance between the source and gate electrodes in a field-effect transistor (FET).

Symbol: C_sg

Measurement: CapacitanceUnit: μF

Note: Value should be greater than 0.

Formulas to find Source Gate Capacitance

Gate-Drain Capacitance

Gate-drain capacitance is a parasitic capacitance that exists between the gate and drain electrodes of a field-effect transistor (FET).

Symbol: C_gd

Measurement: CapacitanceUnit: μF

Note: Value should be greater than 0.

Formulas to find Gate-Drain Capacitance

Other formulas in Voltage category

Go Output Voltage at Drain Q1 of MOSFET

v o1 = - (R out \cdot I t)

Go Output Voltage at Drain Q2 of MOSFET

v o2 = - (R out \cdot I t)

Go Output Voltage at Drain Q1 of MOSFET given Common-Mode Signal

v o1 = - R out \cdot \frac{g m \cdot V cin}{1 + (2 \cdot g m \cdot R out)}

Go Output Voltage at Drain Q2 of MOSFET given Common-Mode Signal

v o2 = - (\frac{R out}{(\frac{1}{g m}) + 2 \cdot R out}) \cdot V cin

How to Evaluate Positive Voltage given Device Parameter in MOSFET?

Positive Voltage given Device Parameter in MOSFET evaluator uses Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance)) to evaluate the Input Current, The Positive Voltage given Device Parameter in MOSFET increases with doping while the threshold of pMOS structures decreases with doping in the same way. A variation of the flat band voltage due to oxide charge will cause both curves to move down if the charge is positive and up if the charge is negative. Input Current is denoted by I_in symbol.

How to evaluate Positive Voltage given Device Parameter in MOSFET using this online evaluator? To use this online evaluator for Positive Voltage given Device Parameter in MOSFET, enter Gate-Source Voltage (V_gs), Angular Frequency (ω), Source Gate Capacitance (C_sg) & Gate-Drain Capacitance (C_gd) and hit the calculate button.

FAQs on Positive Voltage given Device Parameter in MOSFET

What is the formula to find Positive Voltage given Device Parameter in MOSFET?

The formula of Positive Voltage given Device Parameter in MOSFET is expressed as Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance)). Here is an example- 2001.12 = 4*(33*(8.16E-06+7E-06)).

How to calculate Positive Voltage given Device Parameter in MOSFET?

With Gate-Source Voltage (V_gs), Angular Frequency (ω), Source Gate Capacitance (C_sg) & Gate-Drain Capacitance (C_gd) we can find Positive Voltage given Device Parameter in MOSFET using the formula - Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance)).

Can the Positive Voltage given Device Parameter in MOSFET be negative?

Yes, the Positive Voltage given Device Parameter in MOSFET, measured in Electric Current can be negative.

Which unit is used to measure Positive Voltage given Device Parameter in MOSFET?

Positive Voltage given Device Parameter in MOSFET is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Positive Voltage given Device Parameter in MOSFET can be measured.

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Positive Voltage given Device Parameter in MOSFET Formula

Positive Voltage given Device Parameter in MOSFET Example

Positive Voltage given Device Parameter in MOSFET Solution

Positive Voltage given Device Parameter in MOSFET Formula Elements

Other formulas in Voltage category

How to Evaluate Positive Voltage given Device Parameter in MOSFET?

FAQs on Positive Voltage given Device Parameter in MOSFET

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