FormulaDen.com

Physics Chemistry Math Chemical Engineering Civil Electrical Electronics Electronics and Instrumentation Materials Science Mechanical Production Engineering Financial Health

PN Junction Depletion Depth with Source VLSI Formula

Fx Copy

LaTeX Copy

P-n Junction Depletion Depth with Source is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field. Check FAQs

x dS = \sqrt{\frac{2 \cdot [Permitivity-silicon] \cdot [Permitivity-vacuum] \cdot Ø 0}{[Charge-e] \cdot N A}}

x_dS - P-n Junction Depletion Depth with Source?Ø₀ - Junction Built-in Voltage?N_A - Acceptor Concentration?[Permitivity-silicon] - Permittivity of silicon?[Permitivity-vacuum] - Permittivity of vacuum?[Charge-e] - Charge of electron?

PN Junction Depletion Depth with Source VLSI Example

With values

With units

Only example

Here is how the PN Junction Depletion Depth with Source VLSI equation looks like with Values.

Here is how the PN Junction Depletion Depth with Source VLSI equation looks like with Units.

Here is how the PN Junction Depletion Depth with Source VLSI equation looks like.

0.3134 = \sqrt{\frac{2 \cdot 11.7 \cdot 8.9E-12 \cdot 0.76}{1.6E-19 \cdot 1E+16}}

0.3134μm = \sqrt{\frac{2 \cdot 11.7 \cdot 8.9E-12F/m \cdot 0.76V}{1.6E-19C \cdot 1E+161/cm³}}

0.3134 = \sqrt{\frac{2 \cdot 11.7 \cdot 8.9E-12 \cdot 0.76}{1.6E-19 \cdot 1E+16}}

Tip: Use pencil ( Pencil

) icon above to edit Input Values and Units.

Calculate

Recalculate

Solution

Copy

Reset

You are here -

Home » Category

Engineering » Category

Electronics » Category

VLSI Fabrication » fx PN Junction Depletion Depth with Source VLSI

PN Junction Depletion Depth with Source VLSI Solution

Follow our step by step solution on how to calculate PN Junction Depletion Depth with Source VLSI?

FIRST Step Consider the formula

x dS = \sqrt{\frac{2 \cdot [Permitivity-silicon] \cdot [Permitivity-vacuum] \cdot Ø 0}{[Charge-e] \cdot N A}}

Next Step Substitute values of Variables

∴

x dS = \sqrt{\frac{2 \cdot [Permitivity-silicon] \cdot [Permitivity-vacuum] \cdot 0.76V}{[Charge-e] \cdot 1E+161/cm³}}

Next Step Substitute values of Constants

∴

x dS = \sqrt{\frac{2 \cdot 11.7 \cdot 8.9E-12F/m \cdot 0.76V}{1.6E-19C \cdot 1E+161/cm³}}

Next Step Convert Units

∴

x dS = \sqrt{\frac{2 \cdot 11.7 \cdot 8.9E-12F/m \cdot 0.76V}{1.6E-19C \cdot 1E+221/m³}}

Next Step Prepare to Evaluate

∴

x dS = \sqrt{\frac{2 \cdot 11.7 \cdot 8.9E-12 \cdot 0.76}{1.6E-19 \cdot 1E+22}}

Next Step Evaluate

∴

x dS = 3.13423217933622E-07m

Next Step Convert to Output's Unit

∴

x dS = 0.313423217933622μm

LAST Step Rounding Answer

∴

x dS = 0.3134μm

PN Junction Depletion Depth with Source VLSI Formula Elements

Variables

Constants

Functions

P-n Junction Depletion Depth with Source

P-n Junction Depletion Depth with Source is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field.

Symbol: x_dS

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Formulas to find P-n Junction Depletion Depth with Source

Junction Built-in Voltage

Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied.

Symbol: Ø₀

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Junction Built-in Voltage

Acceptor Concentration

Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.

Symbol: N_A

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Acceptor Concentration

Permittivity of silicon

Permittivity of silicon measures its ability to store electrical energy in an electric field, vital in semiconductor technology.

Symbol: [Permitivity-silicon]

Value: 11.7

Permittivity of vacuum

Permittivity of vacuum is a fundamental physical constant that describes the ability of a vacuum to permit the transmission of electric field lines.

Symbol: [Permitivity-vacuum]

Value: 8.85E-12 F/m

Charge of electron

Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.

Symbol: [Charge-e]

Value: 1.60217662E-19 C

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in VLSI Material Optimization category

Go Body Effect Coefficient

γ = mod \underset{̲}{u} s (\frac{V t - V t0}{\sqrt{Φ s + (V sb)} - \sqrt{Φ s}})

Go Channel Charge

Q ch = C g \cdot (V gc - V t)

Go Critical Voltage

V x = E x \cdot E ch

Go DIBL Coefficient

η = \frac{V t0 - V t}{V ds}

How to Evaluate PN Junction Depletion Depth with Source VLSI?

PN Junction Depletion Depth with Source VLSI evaluator uses P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration)) to evaluate the P-n Junction Depletion Depth with Source, The PN Junction Depletion Depth with Source VLSI formula is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field. P-n Junction Depletion Depth with Source is denoted by x_dS symbol.

How to evaluate PN Junction Depletion Depth with Source VLSI using this online evaluator? To use this online evaluator for PN Junction Depletion Depth with Source VLSI, enter Junction Built-in Voltage (Ø₀) & Acceptor Concentration (N_A) and hit the calculate button.

FAQs on PN Junction Depletion Depth with Source VLSI

What is the formula to find PN Junction Depletion Depth with Source VLSI?

The formula of PN Junction Depletion Depth with Source VLSI is expressed as P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration)). Here is an example- 313423.2 = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*0.76)/([Charge-e]*1E+22)).

How to calculate PN Junction Depletion Depth with Source VLSI?

With Junction Built-in Voltage (Ø₀) & Acceptor Concentration (N_A) we can find PN Junction Depletion Depth with Source VLSI using the formula - P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration)). This formula also uses Permittivity of silicon, Permittivity of vacuum, Charge of electron constant(s) and Square Root Function function(s).

Can the PN Junction Depletion Depth with Source VLSI be negative?

No, the PN Junction Depletion Depth with Source VLSI, measured in Length cannot be negative.

Which unit is used to measure PN Junction Depletion Depth with Source VLSI?

PN Junction Depletion Depth with Source VLSI is usually measured using the Micrometer[μm] for Length. Meter[μm], Millimeter[μm], Kilometer[μm] are the few other units in which PN Junction Depletion Depth with Source VLSI can be measured.

Let Others Know

✖

Facebook

Twitter

Copied!

PN Junction Depletion Depth with Source VLSI Formula

PN Junction Depletion Depth with Source VLSI Example

PN Junction Depletion Depth with Source VLSI Solution

PN Junction Depletion Depth with Source VLSI Formula Elements

Other formulas in VLSI Material Optimization category

How to Evaluate PN Junction Depletion Depth with Source VLSI?

FAQs on PN Junction Depletion Depth with Source VLSI

Variable Name