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PN Junction Depletion Depth with Drain VLSI Formula

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P-n Junction Depletion Depth with Drain is defined as the extension of the depletion region into the semiconductor material near the drain terminal. Check FAQs

x dD = \sqrt{(\frac{2 \cdot [Permitivity-silicon] \cdot [Permitivity-vacuum]}{[Charge-e] \cdot N A}) \cdot (Ø 0 + V ds)}

x_dD - P-n Junction Depletion Depth with Drain?N_A - Acceptor Concentration?Ø₀ - Junction Built-in Voltage?V_ds - Drain to Source Potential?[Permitivity-silicon] - Permittivity of silicon?[Permitivity-vacuum] - Permittivity of vacuum?[Charge-e] - Charge of electron?

PN Junction Depletion Depth with Drain VLSI Example

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Here is how the PN Junction Depletion Depth with Drain VLSI equation looks like with Values.

Here is how the PN Junction Depletion Depth with Drain VLSI equation looks like with Units.

Here is how the PN Junction Depletion Depth with Drain VLSI equation looks like.

0.5345 = \sqrt{(\frac{2 \cdot 11.7 \cdot 8.9E-12}{1.6E-19 \cdot 1E+16}) \cdot (0.76 + 1.45)}

0.5345μm = \sqrt{(\frac{2 \cdot 11.7 \cdot 8.9E-12F/m}{1.6E-19C \cdot 1E+161/cm³}) \cdot (0.76V + 1.45V)}

0.5345 = \sqrt{(\frac{2 \cdot 11.7 \cdot 8.9E-12}{1.6E-19 \cdot 1E+16}) \cdot (0.76 + 1.45)}

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PN Junction Depletion Depth with Drain VLSI Solution

Follow our step by step solution on how to calculate PN Junction Depletion Depth with Drain VLSI?

FIRST Step Consider the formula

x dD = \sqrt{(\frac{2 \cdot [Permitivity-silicon] \cdot [Permitivity-vacuum]}{[Charge-e] \cdot N A}) \cdot (Ø 0 + V ds)}

Next Step Substitute values of Variables

∴

x dD = \sqrt{(\frac{2 \cdot [Permitivity-silicon] \cdot [Permitivity-vacuum]}{[Charge-e] \cdot 1E+161/cm³}) \cdot (0.76V + 1.45V)}

Next Step Substitute values of Constants

∴

x dD = \sqrt{(\frac{2 \cdot 11.7 \cdot 8.9E-12F/m}{1.6E-19C \cdot 1E+161/cm³}) \cdot (0.76V + 1.45V)}

Next Step Convert Units

∴

x dD = \sqrt{(\frac{2 \cdot 11.7 \cdot 8.9E-12F/m}{1.6E-19C \cdot 1E+221/m³}) \cdot (0.76V + 1.45V)}

Next Step Prepare to Evaluate

∴

x dD = \sqrt{(\frac{2 \cdot 11.7 \cdot 8.9E-12}{1.6E-19 \cdot 1E+22}) \cdot (0.76 + 1.45)}

Next Step Evaluate

∴

x dD = 5.34466520692296E-07m

Next Step Convert to Output's Unit

∴

x dD = 0.534466520692296μm

LAST Step Rounding Answer

∴

x dD = 0.5345μm

PN Junction Depletion Depth with Drain VLSI Formula Elements

Variables

Constants

Functions

P-n Junction Depletion Depth with Drain

P-n Junction Depletion Depth with Drain is defined as the extension of the depletion region into the semiconductor material near the drain terminal.

Symbol: x_dD

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Formulas to find P-n Junction Depletion Depth with Drain

Acceptor Concentration

Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.

Symbol: N_A

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Acceptor Concentration

Junction Built-in Voltage

Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied.

Symbol: Ø₀

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Junction Built-in Voltage

Drain to Source Potential

Drain to source Potential is potential between drain and source.

Symbol: V_ds

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Drain to Source Potential

Permittivity of silicon

Permittivity of silicon measures its ability to store electrical energy in an electric field, vital in semiconductor technology.

Symbol: [Permitivity-silicon]

Value: 11.7

Permittivity of vacuum

Permittivity of vacuum is a fundamental physical constant that describes the ability of a vacuum to permit the transmission of electric field lines.

Symbol: [Permitivity-vacuum]

Value: 8.85E-12 F/m

Charge of electron

Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.

Symbol: [Charge-e]

Value: 1.60217662E-19 C

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in VLSI Material Optimization category

Go Body Effect Coefficient

γ = mod \underset{̲}{u} s (\frac{V t - V t0}{\sqrt{Φ s + (V sb)} - \sqrt{Φ s}})

Go Channel Charge

Q ch = C g \cdot (V gc - V t)

Go Critical Voltage

V x = E x \cdot E ch

Go DIBL Coefficient

η = \frac{V t0 - V t}{V ds}

How to Evaluate PN Junction Depletion Depth with Drain VLSI?

PN Junction Depletion Depth with Drain VLSI evaluator uses P-n Junction Depletion Depth with Drain = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*Acceptor Concentration))*(Junction Built-in Voltage+Drain to Source Potential)) to evaluate the P-n Junction Depletion Depth with Drain, The PN Junction Depletion Depth with Drain VLSI formula is defined as the extension of the depletion region into the semiconductor material near the drain terminal. P-n Junction Depletion Depth with Drain is denoted by x_dD symbol.

How to evaluate PN Junction Depletion Depth with Drain VLSI using this online evaluator? To use this online evaluator for PN Junction Depletion Depth with Drain VLSI, enter Acceptor Concentration (N_A), Junction Built-in Voltage (Ø₀) & Drain to Source Potential (V_ds) and hit the calculate button.

FAQs on PN Junction Depletion Depth with Drain VLSI

What is the formula to find PN Junction Depletion Depth with Drain VLSI?

The formula of PN Junction Depletion Depth with Drain VLSI is expressed as P-n Junction Depletion Depth with Drain = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*Acceptor Concentration))*(Junction Built-in Voltage+Drain to Source Potential)). Here is an example- 534466.5 = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*1E+22))*(0.76+1.45)).

How to calculate PN Junction Depletion Depth with Drain VLSI?

With Acceptor Concentration (N_A), Junction Built-in Voltage (Ø₀) & Drain to Source Potential (V_ds) we can find PN Junction Depletion Depth with Drain VLSI using the formula - P-n Junction Depletion Depth with Drain = sqrt(((2*[Permitivity-silicon]*[Permitivity-vacuum])/([Charge-e]*Acceptor Concentration))*(Junction Built-in Voltage+Drain to Source Potential)). This formula also uses Permittivity of silicon, Permittivity of vacuum, Charge of electron constant(s) and Square Root (sqrt) function(s).

Can the PN Junction Depletion Depth with Drain VLSI be negative?

No, the PN Junction Depletion Depth with Drain VLSI, measured in Length cannot be negative.

Which unit is used to measure PN Junction Depletion Depth with Drain VLSI?

PN Junction Depletion Depth with Drain VLSI is usually measured using the Micrometer[μm] for Length. Meter[μm], Millimeter[μm], Kilometer[μm] are the few other units in which PN Junction Depletion Depth with Drain VLSI can be measured.

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PN Junction Depletion Depth with Drain VLSI Formula

PN Junction Depletion Depth with Drain VLSI Example

PN Junction Depletion Depth with Drain VLSI Solution

PN Junction Depletion Depth with Drain VLSI Formula Elements

Other formulas in VLSI Material Optimization category

How to Evaluate PN Junction Depletion Depth with Drain VLSI?

FAQs on PN Junction Depletion Depth with Drain VLSI

Variable Name