Oxide Layer Thickness Formula

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The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET. Check FAQs
tox=εoxWgLgCin
tox - Oxide Layer Thickness?εox - Permittivity of Oxide Layer?Wg - Gate Width?Lg - Length of Gate?Cin - Input Gate Capacitance?

Oxide Layer Thickness Example

With values
With units
Only example

Here is how the Oxide Layer Thickness equation looks like with Values.

Here is how the Oxide Layer Thickness equation looks like with Units.

Here is how the Oxide Layer Thickness equation looks like.

4.9797Edit=149.79Edit0.285Edit7Edit60.01Edit
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Oxide Layer Thickness Solution

Follow our step by step solution on how to calculate Oxide Layer Thickness?

FIRST Step Consider the formula
tox=εoxWgLgCin
Next Step Substitute values of Variables
tox=149.79μF/mm0.285mm7mm60.01μF
Next Step Convert Units
tox=0.1498F/m0.0003m0.007m6E-5F
Next Step Prepare to Evaluate
tox=0.14980.00030.0076E-5
Next Step Evaluate
tox=0.00497968755207465m
Next Step Convert to Output's Unit
tox=4.97968755207465mm
LAST Step Rounding Answer
tox=4.9797mm

Oxide Layer Thickness Formula Elements

Variables
Oxide Layer Thickness
The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET.
Symbol: tox
Measurement: LengthUnit: mm
Note: Value should be greater than 0.
Permittivity of Oxide Layer
Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field.
Symbol: εox
Measurement: PermittivityUnit: μF/mm
Note: Value should be greater than 0.
Gate Width
Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.
Symbol: Wg
Measurement: LengthUnit: mm
Note: Value should be greater than 0.
Length of Gate
Length of Gate is the measurement or extent of something from end to end.
Symbol: Lg
Measurement: LengthUnit: mm
Note: Value should be greater than 0.
Input Gate Capacitance
Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).
Symbol: Cin
Measurement: CapacitanceUnit: μF
Note: Value should be greater than 0.

Other formulas in CMOS Circuit Characteristics category

​Go CMOS Critical Voltage
Vc=EcL
​Go CMOS Mean Free Path
L=VcEc
​Go Width of Source Diffusion
W=AsDs
​Go Area of Source Diffusion
As=DsW

How to Evaluate Oxide Layer Thickness?

Oxide Layer Thickness evaluator uses Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance to evaluate the Oxide Layer Thickness, The Oxide Layer Thickness formula is defined as is the thickness of silicon oxide film that provides the same electrical performance. Oxide Layer Thickness is denoted by tox symbol.

How to evaluate Oxide Layer Thickness using this online evaluator? To use this online evaluator for Oxide Layer Thickness, enter Permittivity of Oxide Layer ox), Gate Width (Wg), Length of Gate (Lg) & Input Gate Capacitance (Cin) and hit the calculate button.

FAQs on Oxide Layer Thickness

What is the formula to find Oxide Layer Thickness?
The formula of Oxide Layer Thickness is expressed as Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance. Here is an example- 4.986669 = 0.14979*0.000285*0.007/6.001E-05.
How to calculate Oxide Layer Thickness?
With Permittivity of Oxide Layer ox), Gate Width (Wg), Length of Gate (Lg) & Input Gate Capacitance (Cin) we can find Oxide Layer Thickness using the formula - Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance.
Can the Oxide Layer Thickness be negative?
No, the Oxide Layer Thickness, measured in Length cannot be negative.
Which unit is used to measure Oxide Layer Thickness?
Oxide Layer Thickness is usually measured using the Millimeter[mm] for Length. Meter[mm], Kilometer[mm], Decimeter[mm] are the few other units in which Oxide Layer Thickness can be measured.
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