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Oxide Capacitance of NMOS Formula

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Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits. Check FAQs

C ox = \frac{3.45 \cdot 10^{- 11}}{t ox}

C_ox - Oxide Capacitance?t_ox - Oxide Thickness?

Oxide Capacitance of NMOS Example

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Here is how the Oxide Capacitance of NMOS equation looks like with Values.

Here is how the Oxide Capacitance of NMOS equation looks like with Units.

Here is how the Oxide Capacitance of NMOS equation looks like.

2.0294 = \frac{3.45 \cdot 10^{- 11}}{17}

2.0294μF = \frac{3.45 \cdot 10^{- 11}}{17μm}

2.0294 = \frac{3.45 \cdot 10^{- 11}}{17}

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Oxide Capacitance of NMOS Solution

Follow our step by step solution on how to calculate Oxide Capacitance of NMOS?

FIRST Step Consider the formula

C ox = \frac{3.45 \cdot 10^{- 11}}{t ox}

Next Step Substitute values of Variables

∴

C ox = \frac{3.45 \cdot 10^{- 11}}{17μm}

Next Step Convert Units

∴

C ox = \frac{3.45 \cdot 10^{- 11}}{1.7E-5m}

Next Step Prepare to Evaluate

∴

C ox = \frac{3.45 \cdot 10^{- 11}}{1.7E-5}

Next Step Evaluate

∴

C ox = 2.02941176470588E-06F

Next Step Convert to Output's Unit

∴

C ox = 2.02941176470588μF

LAST Step Rounding Answer

∴

C ox = 2.0294μF

Oxide Capacitance of NMOS Formula Elements

Variables

Oxide Capacitance

Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

Symbol: C_ox

Measurement: CapacitanceUnit: μF

Note: Value can be positive or negative.

Formulas to find Oxide Capacitance

Oxide Thickness

Oxide thickness refers to the thickness of a thin layer of oxide material that is formed on the surface of a substrate, typically a semiconductor material like silicon.

Symbol: t_ox

Measurement: LengthUnit: μm

Note: Value can be positive or negative.

Formulas to find Oxide Thickness

Other formulas in N Channel Enhancement category

Go Electron Drift Velocity of Channel in NMOS Transistor

v d = μ n \cdot E L

Go NMOS as Linear Resistance

r DS = \frac{L}{μ n \cdot C ox \cdot W c \cdot (V gs - V T)}

Go Current Entering Drain Terminal of NMOS given Gate Source Voltage

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {V ds}^{2})

Go Current Entering Drain-Source in Triode Region of NMOS

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {(V ds)}^{2})

How to Evaluate Oxide Capacitance of NMOS?

Oxide Capacitance of NMOS evaluator uses Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness to evaluate the Oxide Capacitance, Oxide capacitance of NMOS (Cox), is the capacitance of the parallel-plate capacitor of the n-enhancement type mosfet. It is inversely proportional to the thickness of the oxide layer. Oxide Capacitance is denoted by C_ox symbol.

How to evaluate Oxide Capacitance of NMOS using this online evaluator? To use this online evaluator for Oxide Capacitance of NMOS, enter Oxide Thickness (t_ox) and hit the calculate button.

FAQs on Oxide Capacitance of NMOS

What is the formula to find Oxide Capacitance of NMOS?

The formula of Oxide Capacitance of NMOS is expressed as Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness. Here is an example- 2E+6 = (3.45*10^(-11))/1.7E-05.

How to calculate Oxide Capacitance of NMOS?

With Oxide Thickness (t_ox) we can find Oxide Capacitance of NMOS using the formula - Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness.

Can the Oxide Capacitance of NMOS be negative?

Yes, the Oxide Capacitance of NMOS, measured in Capacitance can be negative.

Which unit is used to measure Oxide Capacitance of NMOS?

Oxide Capacitance of NMOS is usually measured using the Microfarad[μF] for Capacitance. Farad[μF], Kilofarad[μF], Millifarad[μF] are the few other units in which Oxide Capacitance of NMOS can be measured.

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