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Oxide Capacitance after Voltage Scaling VLSI Formula

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Oxide capacitance after voltage scaling is refers to the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling. Check FAQs

C ox(vs)' = Sf \cdot C oxide

C_ox(vs)' - Oxide capacitance after voltage scaling?Sf - Scaling Factor?C_oxide - Oxide Capacitance per Unit Area?

Oxide Capacitance after Voltage Scaling VLSI Example

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Here is how the Oxide Capacitance after Voltage Scaling VLSI equation looks like with Values.

Here is how the Oxide Capacitance after Voltage Scaling VLSI equation looks like with Units.

Here is how the Oxide Capacitance after Voltage Scaling VLSI equation looks like.

105.45 = 1.5 \cdot 0.0703

105.45nF/cm² = 1.5 \cdot 0.0703μF/cm²

105.45 = 1.5 \cdot 0.0703

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Oxide Capacitance after Voltage Scaling VLSI Solution

Follow our step by step solution on how to calculate Oxide Capacitance after Voltage Scaling VLSI?

FIRST Step Consider the formula

C ox(vs)' = Sf \cdot C oxide

Next Step Substitute values of Variables

∴

C ox(vs)' = 1.5 \cdot 0.0703μF/cm²

Next Step Convert Units

∴

C ox(vs)' = 1.5 \cdot 0.0007F/m²

Next Step Prepare to Evaluate

∴

C ox(vs)' = 1.5 \cdot 0.0007

Next Step Evaluate

∴

C ox(vs)' = 0.0010545F/m²

LAST Step Convert to Output's Unit

∴

C ox(vs)' = 105.45nF/cm²

Oxide Capacitance after Voltage Scaling VLSI Formula Elements

Variables

Oxide capacitance after voltage scaling

Oxide capacitance after voltage scaling is refers to the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling.

Symbol: C_ox(vs)'

Measurement: Oxide Capacitance Per Unit AreaUnit: nF/cm²

Note: Value should be greater than 0.

Formulas to find Oxide capacitance after voltage scaling

Scaling Factor

Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

Symbol: Sf

Measurement: NAUnit: Unitless

Note: Value should be greater than 0.

Formulas to find Scaling Factor

Oxide Capacitance per Unit Area

Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.

Symbol: C_oxide

Measurement: Oxide Capacitance Per Unit AreaUnit: μF/cm²

Note: Value should be greater than 0.

Formulas to find Oxide Capacitance per Unit Area

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How to Evaluate Oxide Capacitance after Voltage Scaling VLSI?

Oxide Capacitance after Voltage Scaling VLSI evaluator uses Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area to evaluate the Oxide capacitance after voltage scaling, The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling. Oxide capacitance after voltage scaling is denoted by C_ox(vs)' symbol.

How to evaluate Oxide Capacitance after Voltage Scaling VLSI using this online evaluator? To use this online evaluator for Oxide Capacitance after Voltage Scaling VLSI, enter Scaling Factor (Sf) & Oxide Capacitance per Unit Area (C_oxide) and hit the calculate button.

FAQs on Oxide Capacitance after Voltage Scaling VLSI

What is the formula to find Oxide Capacitance after Voltage Scaling VLSI?

The formula of Oxide Capacitance after Voltage Scaling VLSI is expressed as Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area. Here is an example- 1.1E+7 = 1.5*0.000703.

How to calculate Oxide Capacitance after Voltage Scaling VLSI?

With Scaling Factor (Sf) & Oxide Capacitance per Unit Area (C_oxide) we can find Oxide Capacitance after Voltage Scaling VLSI using the formula - Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area.

Can the Oxide Capacitance after Voltage Scaling VLSI be negative?

No, the Oxide Capacitance after Voltage Scaling VLSI, measured in Oxide Capacitance Per Unit Area cannot be negative.

Which unit is used to measure Oxide Capacitance after Voltage Scaling VLSI?

Oxide Capacitance after Voltage Scaling VLSI is usually measured using the Nanofarad per Square Centimeter[nF/cm²] for Oxide Capacitance Per Unit Area. Farad per Square Meter[nF/cm²], Microfarad per Square Centimeter[nF/cm²], Microfarad per Square Millimeter[nF/cm²] are the few other units in which Oxide Capacitance after Voltage Scaling VLSI can be measured.

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Oxide Capacitance after Voltage Scaling VLSI Formula

Oxide Capacitance after Voltage Scaling VLSI Example

Oxide Capacitance after Voltage Scaling VLSI Solution

Oxide Capacitance after Voltage Scaling VLSI Formula Elements

Other formulas in VLSI Material Optimization category

How to Evaluate Oxide Capacitance after Voltage Scaling VLSI?

FAQs on Oxide Capacitance after Voltage Scaling VLSI

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