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Overall Drain Current of PMOS Transistor Formula

GoDrain Current in Triode Region of PMOS Transistor Formula

GoDrain Current in Triode Region of PMOS Transistor given Vsd Formula

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Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Check FAQs

I d = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2} \cdot (1 + \frac{V DS}{mod} \underset{̲}{u} s (V a))

I_d - Drain Current?k'_p - Process Transconductance Parameter in PMOS?WL - Aspect Ratio?V_GS - Voltage between Gate and Source?V_T - Threshold Voltage?V_DS - Voltage between Drain and Source?V_a - Early Voltage?

Overall Drain Current of PMOS Transistor Example

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Here is how the Overall Drain Current of PMOS Transistor equation looks like with Values.

Here is how the Overall Drain Current of PMOS Transistor equation looks like with Units.

Here is how the Overall Drain Current of PMOS Transistor equation looks like.

30.8336 = \frac{1}{2} \cdot 2.1 \cdot 6 \cdot {(2.86 - mod \underset{̲}{u} s (0.7))}^{2} \cdot (1 + \frac{2.45}{mod} \underset{̲}{u} s (50))

30.8336mA = \frac{1}{2} \cdot 2.1mS \cdot 6 \cdot {(2.86V - mod \underset{̲}{u} s (0.7V))}^{2} \cdot (1 + \frac{2.45V}{mod} \underset{̲}{u} s (50V))

30.8336 = \frac{1}{2} \cdot 2.1 \cdot 6 \cdot {(2.86 - mod \underset{̲}{u} s (0.7))}^{2} \cdot (1 + \frac{2.45}{mod} \underset{̲}{u} s (50))

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Overall Drain Current of PMOS Transistor Solution

Follow our step by step solution on how to calculate Overall Drain Current of PMOS Transistor?

FIRST Step Consider the formula

I d = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2} \cdot (1 + \frac{V DS}{mod} \underset{̲}{u} s (V a))

Next Step Substitute values of Variables

∴

I d = \frac{1}{2} \cdot 2.1mS \cdot 6 \cdot {(2.86V - mod \underset{̲}{u} s (0.7V))}^{2} \cdot (1 + \frac{2.45V}{mod} \underset{̲}{u} s (50V))

Next Step Convert Units

∴

I d = \frac{1}{2} \cdot 0.0021S \cdot 6 \cdot {(2.86V - mod \underset{̲}{u} s (0.7V))}^{2} \cdot (1 + \frac{2.45V}{mod} \underset{̲}{u} s (50V))

Next Step Prepare to Evaluate

∴

I d = \frac{1}{2} \cdot 0.0021 \cdot 6 \cdot {(2.86 - mod \underset{̲}{u} s (0.7))}^{2} \cdot (1 + \frac{2.45}{mod} \underset{̲}{u} s (50))

Next Step Evaluate

∴

I d = 0.03083355072A

Next Step Convert to Output's Unit

∴

I d = 30.83355072mA

LAST Step Rounding Answer

∴

I d = 30.8336mA

Overall Drain Current of PMOS Transistor Formula Elements

Variables

Functions

Drain Current

Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).

Symbol: I_d

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Drain Current

Process Transconductance Parameter in PMOS

The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.

Symbol: k'_p

Measurement: Electric ConductanceUnit: mS

Note: Value can be positive or negative.

Formulas to find Process Transconductance Parameter in PMOS

Aspect Ratio

Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.

Symbol: WL

Measurement: NAUnit: Unitless

Note: Value should be greater than 0.

Formulas to find Aspect Ratio

Voltage between Gate and Source

The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.

Symbol: V_GS

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Voltage between Gate and Source

Threshold Voltage

Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

Symbol: V_T

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Threshold Voltage

Voltage between Drain and Source

The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS.

Symbol: V_DS

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Voltage between Drain and Source

Early Voltage

Early voltage is entirely process-technology dependent, with the dimensions of volts per micron.

Symbol: V_a

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Early Voltage

modulus

Modulus of a number is the remainder when that number is divided by another number.

Syntax: modulus

Other Formulas to find Drain Current

Go Drain Current in Triode Region of PMOS Transistor

I d = k' p \cdot WL \cdot ((V GS - mod \underset{̲}{u} s (V T)) \cdot V DS - \frac{1}{2} \cdot {(V DS)}^{2})

Go Drain Current in Triode Region of PMOS Transistor given Vsd

I d = k' p \cdot WL \cdot (mod \underset{̲}{u} s (V ov) - \frac{1}{2} \cdot V DS) \cdot V DS

Other formulas in P Channel Enhancement category

Go Drain Current in Saturation Region of PMOS Transistor

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2}

Go Drain Current in Saturation Region of PMOS Transistor given Vov

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V ov)}^{2}

How to Evaluate Overall Drain Current of PMOS Transistor?

Overall Drain Current of PMOS Transistor evaluator uses Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage)) to evaluate the Drain Current, The Overall drain current of PMOS transistor, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current. Drain Current is denoted by I_d symbol.

How to evaluate Overall Drain Current of PMOS Transistor using this online evaluator? To use this online evaluator for Overall Drain Current of PMOS Transistor, enter Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL), Voltage between Gate and Source (V_GS), Threshold Voltage (V_T), Voltage between Drain and Source (V_DS) & Early Voltage (V_a) and hit the calculate button.

FAQs on Overall Drain Current of PMOS Transistor

What is the formula to find Overall Drain Current of PMOS Transistor?

The formula of Overall Drain Current of PMOS Transistor is expressed as Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage)). Here is an example- 30833.55 = 1/2*0.0021*6*(2.86-modulus(0.7))^2*(1+2.45/modulus(50)).

How to calculate Overall Drain Current of PMOS Transistor?

With Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL), Voltage between Gate and Source (V_GS), Threshold Voltage (V_T), Voltage between Drain and Source (V_DS) & Early Voltage (V_a) we can find Overall Drain Current of PMOS Transistor using the formula - Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage)). This formula also uses Modulus (modulus) function(s).

What are the other ways to Calculate Drain Current?

Here are the different ways to Calculate Drain Current-

Drain Current=Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)
Drain Current=Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source
Drain Current=(Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Can the Overall Drain Current of PMOS Transistor be negative?

No, the Overall Drain Current of PMOS Transistor, measured in Electric Current cannot be negative.

Which unit is used to measure Overall Drain Current of PMOS Transistor?

Overall Drain Current of PMOS Transistor is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Overall Drain Current of PMOS Transistor can be measured.

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Overall Drain Current of PMOS Transistor Formula

​GoDrain Current in Triode Region of PMOS Transistor Formula

​GoDrain Current in Triode Region of PMOS Transistor given Vsd Formula

Overall Drain Current of PMOS Transistor Example

Overall Drain Current of PMOS Transistor Solution

Overall Drain Current of PMOS Transistor Formula Elements

Other Formulas to find Drain Current

Other formulas in P Channel Enhancement category

How to Evaluate Overall Drain Current of PMOS Transistor?

FAQs on Overall Drain Current of PMOS Transistor

Variable Name

GoDrain Current in Triode Region of PMOS Transistor Formula

GoDrain Current in Triode Region of PMOS Transistor given Vsd Formula