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Ohmic Conductivity of Impurity Formula

GoConductivity of N-Type Formula

GoConductivity of P-Type Formula

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Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another. Check FAQs

σ = q \cdot (μ n \cdot n e + μ p \cdot p)

σ - Ohmic Conductivity?q - Charge?μ_n - Electron Doping Silicon Mobility?n_e - Electron Concentration?μ_p - Hole Doping Silicon Mobility?p - Hole Concentration?

Ohmic Conductivity of Impurity Example

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Here is how the Ohmic Conductivity of Impurity equation looks like with Values.

Here is how the Ohmic Conductivity of Impurity equation looks like with Units.

Here is how the Ohmic Conductivity of Impurity equation looks like.

0.1044 = 5 \cdot (0.38 \cdot 50.6 + 2.4 \cdot 0.69)

0.1044mho/cm = 5mC \cdot (0.38cm²/V*s \cdot 50.61/cm³ + 2.4cm²/V*s \cdot 0.691/cm³)

0.1044 = 5 \cdot (0.38 \cdot 50.6 + 2.4 \cdot 0.69)

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Ohmic Conductivity of Impurity Solution

Follow our step by step solution on how to calculate Ohmic Conductivity of Impurity?

FIRST Step Consider the formula

σ = q \cdot (μ n \cdot n e + μ p \cdot p)

Next Step Substitute values of Variables

∴

σ = 5mC \cdot (0.38cm²/V*s \cdot 50.61/cm³ + 2.4cm²/V*s \cdot 0.691/cm³)

Next Step Convert Units

∴

σ = 0.005C \cdot (3.8E-5m²/V*s \cdot 5.1E+71/m³ + 0.0002m²/V*s \cdot 6900001/m³)

Next Step Prepare to Evaluate

∴

σ = 0.005 \cdot (3.8E-5 \cdot 5.1E+7 + 0.0002 \cdot 690000)

Next Step Evaluate

∴

σ = 10.442S/m

Next Step Convert to Output's Unit

∴

σ = 0.10442mho/cm

LAST Step Rounding Answer

∴

σ = 0.1044mho/cm

Ohmic Conductivity of Impurity Formula Elements

Variables

Ohmic Conductivity

Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.

Symbol: σ

Measurement: Electric ConductivityUnit: mho/cm

Note: Value should be greater than 0.

Formulas to find Ohmic Conductivity

Charge

Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.

Symbol: q

Measurement: Electric ChargeUnit: mC

Note: Value should be greater than 0.

Formulas to find Charge

Electron Doping Silicon Mobility

Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.

Symbol: μ_n

Measurement: MobilityUnit: cm²/V*s

Note: Value should be greater than 0.

Formulas to find Electron Doping Silicon Mobility

Electron Concentration

Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields.

Symbol: n_e

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Electron Concentration

Hole Doping Silicon Mobility

Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.

Symbol: μ_p

Measurement: MobilityUnit: cm²/V*s

Note: Value should be greater than 0.

Formulas to find Hole Doping Silicon Mobility

Hole Concentration

Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device.

Symbol: p

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Hole Concentration

Other Formulas to find Ohmic Conductivity

Go Conductivity of N-Type

σ = q \cdot (μ n \cdot N d + μ p \cdot (\frac{{n i}^{2}}{N d}))

Go Conductivity of P-Type

σ = q \cdot (μ n \cdot (\frac{{n i}^{2}}{N a}) + μ p \cdot N a)

Other formulas in Bipolar IC Fabrication category

Go Impurity with Intrinsic Concentration

n i = \sqrt{\frac{n e \cdot p}{t o}}

Go Breakout Voltage of Collector Emitter

V ce = \frac{V cb}{{(i g)}^{\frac{1}{n}}}

Go Resistance of Diffused Layer

R = (\frac{1}{σ}) \cdot (\frac{L}{W \cdot t})

Go Sheet Resistance of Layer

R s = \frac{1}{q \cdot μ n \cdot N d \cdot t}

How to Evaluate Ohmic Conductivity of Impurity?

Ohmic Conductivity of Impurity evaluator uses Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration) to evaluate the Ohmic Conductivity, The Ohmic Conductivity of Impurity specifically refers to a linear relationship between the current passing through a material and the applied voltage. In the context of impurity atoms in a semiconductor, the conductivity behavior is primarily determined by the dopant concentration, the charge carriers introduced, and their mobility within the crystal lattice. Ohmic Conductivity is denoted by σ symbol.

How to evaluate Ohmic Conductivity of Impurity using this online evaluator? To use this online evaluator for Ohmic Conductivity of Impurity, enter Charge (q), Electron Doping Silicon Mobility (μ_n), Electron Concentration (n_e), Hole Doping Silicon Mobility (μ_p) & Hole Concentration (p) and hit the calculate button.

FAQs on Ohmic Conductivity of Impurity

What is the formula to find Ohmic Conductivity of Impurity?

The formula of Ohmic Conductivity of Impurity is expressed as Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration). Here is an example- 0.00086 = 0.005*(3.8E-05*50600000+0.00024*690000).

How to calculate Ohmic Conductivity of Impurity?

With Charge (q), Electron Doping Silicon Mobility (μ_n), Electron Concentration (n_e), Hole Doping Silicon Mobility (μ_p) & Hole Concentration (p) we can find Ohmic Conductivity of Impurity using the formula - Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration).

What are the other ways to Calculate Ohmic Conductivity?

Here are the different ways to Calculate Ohmic Conductivity-

Ohmic Conductivity=Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))
Ohmic Conductivity=Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Can the Ohmic Conductivity of Impurity be negative?

No, the Ohmic Conductivity of Impurity, measured in Electric Conductivity cannot be negative.

Which unit is used to measure Ohmic Conductivity of Impurity?

Ohmic Conductivity of Impurity is usually measured using the Mho per Centimeter[mho/cm] for Electric Conductivity. Siemens per Meter[mho/cm], Mho per Meter[mho/cm], Abmho per Meter[mho/cm] are the few other units in which Ohmic Conductivity of Impurity can be measured.

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Ohmic Conductivity of Impurity Formula

​GoConductivity of N-Type Formula

​GoConductivity of P-Type Formula

Ohmic Conductivity of Impurity Example

Ohmic Conductivity of Impurity Solution

Ohmic Conductivity of Impurity Formula Elements

Other Formulas to find Ohmic Conductivity

Other formulas in Bipolar IC Fabrication category

How to Evaluate Ohmic Conductivity of Impurity?

FAQs on Ohmic Conductivity of Impurity

Variable Name

GoConductivity of N-Type Formula

GoConductivity of P-Type Formula