Net Rate of Change in Conduction Band Formula

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Proportionality for recombination is denoted by the symbol αr. Check FAQs
αr=TGni2
αr - Proportionality for Recombination?TG - Thermal Generation?ni - Intrinsic Carrier Concentration?

Net Rate of Change in Conduction Band Example

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With units
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Here is how the Net Rate of Change in Conduction Band equation looks like with Values.

Here is how the Net Rate of Change in Conduction Band equation looks like with Units.

Here is how the Net Rate of Change in Conduction Band equation looks like.

1.2E-6Edit=8.7E+10Edit2.7E+8Edit2
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Net Rate of Change in Conduction Band Solution

Follow our step by step solution on how to calculate Net Rate of Change in Conduction Band?

FIRST Step Consider the formula
αr=TGni2
Next Step Substitute values of Variables
αr=8.7E+102.7E+81/m³2
Next Step Prepare to Evaluate
αr=8.7E+102.7E+82
Next Step Evaluate
αr=1.19341563786008E-06m³/s
LAST Step Rounding Answer
αr=1.2E-6m³/s

Net Rate of Change in Conduction Band Formula Elements

Variables
Proportionality for Recombination
Proportionality for recombination is denoted by the symbol αr.
Symbol: αr
Measurement: Volumetric Flow RateUnit: m³/s
Note: Value should be greater than 0.
Thermal Generation
Thermal Generation recombination rates that are balanced so that the net charge carrier density remains constant.
Symbol: TG
Measurement: NAUnit: Unitless
Note: Value can be positive or negative.
Intrinsic Carrier Concentration
Intrinsic Carrier Concentration is used to describe the concentration of charge carriers (electrons and holes) in an intrinsic or undoped semiconductor material at thermal equilibrium.
Symbol: ni
Measurement: Carrier ConcentrationUnit: 1/m³
Note: Value should be greater than 0.

Other formulas in Energy Band and Charge Carrier category

​Go Energy Gap
Eg=Ec-Ev
​Go Valence Band Energy
Ev=Ec-Eg
​Go Steady State Electron Concentration
nss=n0+δn
​Go Energy of Electron given Coulomb's Constant
Ee=n2π2[hP]22[Mass-e]L2

How to Evaluate Net Rate of Change in Conduction Band?

Net Rate of Change in Conduction Band evaluator uses Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2) to evaluate the Proportionality for Recombination, Net Rate of Change in Conduction Band refers to the rate at which electrons move through the material under the influence of an electric field. This rate of change is typically expressed in units of current density, which is the amount of charge per unit area per unit time. Proportionality for Recombination is denoted by αr symbol.

How to evaluate Net Rate of Change in Conduction Band using this online evaluator? To use this online evaluator for Net Rate of Change in Conduction Band, enter Thermal Generation (TG) & Intrinsic Carrier Concentration (ni) and hit the calculate button.

FAQs on Net Rate of Change in Conduction Band

What is the formula to find Net Rate of Change in Conduction Band?
The formula of Net Rate of Change in Conduction Band is expressed as Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2). Here is an example- 1.2E-6 = 87000000000/(270000000^2).
How to calculate Net Rate of Change in Conduction Band?
With Thermal Generation (TG) & Intrinsic Carrier Concentration (ni) we can find Net Rate of Change in Conduction Band using the formula - Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2).
Can the Net Rate of Change in Conduction Band be negative?
No, the Net Rate of Change in Conduction Band, measured in Volumetric Flow Rate cannot be negative.
Which unit is used to measure Net Rate of Change in Conduction Band?
Net Rate of Change in Conduction Band is usually measured using the Cubic Meter per Second[m³/s] for Volumetric Flow Rate. Cubic Meter per Day[m³/s], Cubic Meter per Hour[m³/s], Cubic Meter per Minute[m³/s] are the few other units in which Net Rate of Change in Conduction Band can be measured.
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