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The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor. Check FAQs
k'n=gmWL(Vgs-Vth)
k'n - Process Transconductance Parameter?gm - Transconductance?WL - Aspect Ratio?Vgs - Gate-Source Voltage?Vth - Threshold Voltage?

MOSFET Transconductance using Process Transconductance Parameter Example

With values
With units
Only example

Here is how the MOSFET Transconductance using Process Transconductance Parameter equation looks like with Values.

Here is how the MOSFET Transconductance using Process Transconductance Parameter equation looks like with Units.

Here is how the MOSFET Transconductance using Process Transconductance Parameter equation looks like.

0.0156Edit=0.5Edit0.1Edit(4Edit-3.68Edit)
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MOSFET Transconductance using Process Transconductance Parameter Solution

Follow our step by step solution on how to calculate MOSFET Transconductance using Process Transconductance Parameter?

FIRST Step Consider the formula
k'n=gmWL(Vgs-Vth)
Next Step Substitute values of Variables
k'n=0.5mS0.1(4V-3.68V)
Next Step Convert Units
k'n=0.0005S0.1(4V-3.68V)
Next Step Prepare to Evaluate
k'n=0.00050.1(4-3.68)
Next Step Evaluate
k'n=0.015625A/V²
LAST Step Rounding Answer
k'n=0.0156A/V²

MOSFET Transconductance using Process Transconductance Parameter Formula Elements

Variables
Process Transconductance Parameter
The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Symbol: k'n
Measurement: Transconductance ParameterUnit: A/V²
Note: Value can be positive or negative.
Transconductance
Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
Symbol: gm
Measurement: Electric ConductanceUnit: mS
Note: Value can be positive or negative.
Aspect Ratio
Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Symbol: WL
Measurement: NAUnit: Unitless
Note: Value can be positive or negative.
Gate-Source Voltage
Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Symbol: Vgs
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Threshold Voltage
Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
Symbol: Vth
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.

Other Formulas to find Process Transconductance Parameter

​Go Process Transconductance given Transconductance and Drain Current
k'n=gm22WLid
​Go MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage
k'n=gmWLVov

Other formulas in Transconductance category

​Go Drain Current using Transconductance
id=(Vov)gm2
​Go Transconductance given Drain Current
gm=2k'nWLid
​Go Transconductance given Process Transconductance Parameter
gm=k'nWL(Vgs-Vth)
​Go Transconductance using Process Transconductance Parameter and Overdrive Voltage
gm=k'nWLVov

How to Evaluate MOSFET Transconductance using Process Transconductance Parameter?

MOSFET Transconductance using Process Transconductance Parameter evaluator uses Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)) to evaluate the Process Transconductance Parameter, The MOSFET Transconductance using Process Transconductance Parameter is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage. Process Transconductance Parameter is denoted by k'n symbol.

How to evaluate MOSFET Transconductance using Process Transconductance Parameter using this online evaluator? To use this online evaluator for MOSFET Transconductance using Process Transconductance Parameter, enter Transconductance (gm), Aspect Ratio (WL), Gate-Source Voltage (Vgs) & Threshold Voltage (Vth) and hit the calculate button.

FAQs on MOSFET Transconductance using Process Transconductance Parameter

What is the formula to find MOSFET Transconductance using Process Transconductance Parameter?
The formula of MOSFET Transconductance using Process Transconductance Parameter is expressed as Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)). Here is an example- 0.015625 = 0.0005/(0.1*(4-3.68)).
How to calculate MOSFET Transconductance using Process Transconductance Parameter?
With Transconductance (gm), Aspect Ratio (WL), Gate-Source Voltage (Vgs) & Threshold Voltage (Vth) we can find MOSFET Transconductance using Process Transconductance Parameter using the formula - Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)).
What are the other ways to Calculate Process Transconductance Parameter?
Here are the different ways to Calculate Process Transconductance Parameter-
  • Process Transconductance Parameter=Transconductance^2/(2*Aspect Ratio*Drain Current)OpenImg
  • Process Transconductance Parameter=Transconductance/(Aspect Ratio*Overdrive Voltage)OpenImg
Can the MOSFET Transconductance using Process Transconductance Parameter be negative?
Yes, the MOSFET Transconductance using Process Transconductance Parameter, measured in Transconductance Parameter can be negative.
Which unit is used to measure MOSFET Transconductance using Process Transconductance Parameter?
MOSFET Transconductance using Process Transconductance Parameter is usually measured using the Ampere per Square Volt[A/V²] for Transconductance Parameter. Milliampere per Square Volt[A/V²], Microampere per Square Volt[A/V²] are the few other units in which MOSFET Transconductance using Process Transconductance Parameter can be measured.
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