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The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor. Check FAQs
k'n=gmWLVov
k'n - Process Transconductance Parameter?gm - Transconductance?WL - Aspect Ratio?Vov - Overdrive Voltage?

MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage Example

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With units
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Here is how the MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage equation looks like with Values.

Here is how the MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage equation looks like with Units.

Here is how the MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage equation looks like.

0.0156Edit=0.5Edit0.1Edit0.32Edit
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MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage Solution

Follow our step by step solution on how to calculate MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage?

FIRST Step Consider the formula
k'n=gmWLVov
Next Step Substitute values of Variables
k'n=0.5mS0.10.32V
Next Step Convert Units
k'n=0.0005S0.10.32V
Next Step Prepare to Evaluate
k'n=0.00050.10.32
Next Step Evaluate
k'n=0.015625A/V²
LAST Step Rounding Answer
k'n=0.0156A/V²

MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage Formula Elements

Variables
Process Transconductance Parameter
The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Symbol: k'n
Measurement: Transconductance ParameterUnit: A/V²
Note: Value can be positive or negative.
Transconductance
Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
Symbol: gm
Measurement: Electric ConductanceUnit: mS
Note: Value can be positive or negative.
Aspect Ratio
Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Symbol: WL
Measurement: NAUnit: Unitless
Note: Value can be positive or negative.
Overdrive Voltage
Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.
Symbol: Vov
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.

Other Formulas to find Process Transconductance Parameter

​Go Process Transconductance given Transconductance and Drain Current
k'n=gm22WLid
​Go MOSFET Transconductance using Process Transconductance Parameter
k'n=gmWL(Vgs-Vth)

Other formulas in Transconductance category

​Go Drain Current using Transconductance
id=(Vov)gm2
​Go Transconductance given Drain Current
gm=2k'nWLid
​Go Transconductance given Process Transconductance Parameter
gm=k'nWL(Vgs-Vth)
​Go Transconductance using Process Transconductance Parameter and Overdrive Voltage
gm=k'nWLVov

How to Evaluate MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage?

MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage evaluator uses Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage) to evaluate the Process Transconductance Parameter, MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage. Process Transconductance Parameter is denoted by k'n symbol.

How to evaluate MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage using this online evaluator? To use this online evaluator for MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage, enter Transconductance (gm), Aspect Ratio (WL) & Overdrive Voltage (Vov) and hit the calculate button.

FAQs on MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage

What is the formula to find MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage?
The formula of MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage is expressed as Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage). Here is an example- 0.015625 = 0.0005/(0.1*0.32).
How to calculate MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage?
With Transconductance (gm), Aspect Ratio (WL) & Overdrive Voltage (Vov) we can find MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage using the formula - Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage).
What are the other ways to Calculate Process Transconductance Parameter?
Here are the different ways to Calculate Process Transconductance Parameter-
  • Process Transconductance Parameter=Transconductance^2/(2*Aspect Ratio*Drain Current)OpenImg
  • Process Transconductance Parameter=Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))OpenImg
Can the MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage be negative?
Yes, the MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage, measured in Transconductance Parameter can be negative.
Which unit is used to measure MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage?
MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage is usually measured using the Ampere per Square Volt[A/V²] for Transconductance Parameter. Milliampere per Square Volt[A/V²], Microampere per Square Volt[A/V²] are the few other units in which MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage can be measured.
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