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Linear resistance, the amount of opposition or resistance is directly proportional to the amount of current flowing through it, as described by Ohm's Law. Check FAQs
Rds=LμsCoxWcVeff
Rds - Linear Resistance?L - Channel Length?μs - Mobility of Electrons at Surface of Channel?Cox - Oxide Capacitance?Wc - Channel Width?Veff - Effective Voltage?

MOSFET as Linear Resistance given Aspect Ratio Example

With values
With units
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Here is how the MOSFET as Linear Resistance given Aspect Ratio equation looks like with Values.

Here is how the MOSFET as Linear Resistance given Aspect Ratio equation looks like with Units.

Here is how the MOSFET as Linear Resistance given Aspect Ratio equation looks like.

0.1647Edit=100Edit38Edit940Edit10Edit1.7Edit
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MOSFET as Linear Resistance given Aspect Ratio Solution

Follow our step by step solution on how to calculate MOSFET as Linear Resistance given Aspect Ratio?

FIRST Step Consider the formula
Rds=LμsCoxWcVeff
Next Step Substitute values of Variables
Rds=100μm38m²/V*s940μF10μm1.7V
Next Step Convert Units
Rds=0.0001m38m²/V*s0.0009F1E-5m1.7V
Next Step Prepare to Evaluate
Rds=0.0001380.00091E-51.7
Next Step Evaluate
Rds=164.679533627561Ω
Next Step Convert to Output's Unit
Rds=0.164679533627561
LAST Step Rounding Answer
Rds=0.1647

MOSFET as Linear Resistance given Aspect Ratio Formula Elements

Variables
Linear Resistance
Linear resistance, the amount of opposition or resistance is directly proportional to the amount of current flowing through it, as described by Ohm's Law.
Symbol: Rds
Measurement: Electric ResistanceUnit:
Note: Value should be greater than 0.
Channel Length
Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).
Symbol: L
Measurement: LengthUnit: μm
Note: Value should be greater than 0.
Mobility of Electrons at Surface of Channel
The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.
Symbol: μs
Measurement: MobilityUnit: m²/V*s
Note: Value should be greater than 0.
Oxide Capacitance
Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Symbol: Cox
Measurement: CapacitanceUnit: μF
Note: Value should be greater than 0.
Channel Width
Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Symbol: Wc
Measurement: LengthUnit: μm
Note: Value should be greater than 0.
Effective Voltage
The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.
Symbol: Veff
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.

Other Formulas to find Linear Resistance

​Go MOSFET as Linear Resistance
Rds=1G

Other formulas in Resistance category

​Go Electron Mean Free Path
λ=1Routid
​Go Drain Output Resistance
Rout=1λid
​Go Finite Resistance between Drain and Source
Rfi=modu̲sVaid
​Go Conductance in Linear Resistance of MOSFET
G=1Rds

How to Evaluate MOSFET as Linear Resistance given Aspect Ratio?

MOSFET as Linear Resistance given Aspect Ratio evaluator uses Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage) to evaluate the Linear Resistance, The MOSFET as linear resistance given aspect Ratio acts as a variable resistor in the linear region and as a current source in the saturation region. Unlike a BJT, to use a MOSFET as a switch, you need to operate within the linear region. Linear Resistance is denoted by Rds symbol.

How to evaluate MOSFET as Linear Resistance given Aspect Ratio using this online evaluator? To use this online evaluator for MOSFET as Linear Resistance given Aspect Ratio, enter Channel Length (L), Mobility of Electrons at Surface of Channel s), Oxide Capacitance (Cox), Channel Width (Wc) & Effective Voltage (Veff) and hit the calculate button.

FAQs on MOSFET as Linear Resistance given Aspect Ratio

What is the formula to find MOSFET as Linear Resistance given Aspect Ratio?
The formula of MOSFET as Linear Resistance given Aspect Ratio is expressed as Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage). Here is an example- 0.000165 = 0.0001/(38*0.00094*1E-05*1.7).
How to calculate MOSFET as Linear Resistance given Aspect Ratio?
With Channel Length (L), Mobility of Electrons at Surface of Channel s), Oxide Capacitance (Cox), Channel Width (Wc) & Effective Voltage (Veff) we can find MOSFET as Linear Resistance given Aspect Ratio using the formula - Linear Resistance = Channel Length/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width*Effective Voltage).
What are the other ways to Calculate Linear Resistance?
Here are the different ways to Calculate Linear Resistance-
  • Linear Resistance=1/Conductance of ChannelOpenImg
Can the MOSFET as Linear Resistance given Aspect Ratio be negative?
No, the MOSFET as Linear Resistance given Aspect Ratio, measured in Electric Resistance cannot be negative.
Which unit is used to measure MOSFET as Linear Resistance given Aspect Ratio?
MOSFET as Linear Resistance given Aspect Ratio is usually measured using the Kilohm[kΩ] for Electric Resistance. Ohm[kΩ], Megohm[kΩ], Microhm[kΩ] are the few other units in which MOSFET as Linear Resistance given Aspect Ratio can be measured.
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