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Junction Built-in Voltage VLSI Formula

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Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied. Check FAQs

Ø 0 = ([BoltZ] \cdot \frac{T}{[Charge-e]}) \cdot \ln (N A \cdot \frac{N D}{{(N i)}^{2}})

Ø₀ - Junction Built-in Voltage?T - Temperature?N_A - Acceptor Concentration?N_D - Donor concentration?N_i - Intrinsic Concentration?[BoltZ] - Boltzmann constant?[Charge-e] - Charge of electron?

Junction Built-in Voltage VLSI Example

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Here is how the Junction Built-in Voltage VLSI equation looks like with Values.

Here is how the Junction Built-in Voltage VLSI equation looks like with Units.

Here is how the Junction Built-in Voltage VLSI equation looks like.

0.7546 = (1.4E-23 \cdot \frac{300}{1.6E-19}) \cdot \ln (1E+16 \cdot \frac{1E+17}{{(1.5E+10)}^{2}})

0.7546V = (1.4E-23J/K \cdot \frac{300K}{1.6E-19C}) \cdot \ln (1E+161/cm³ \cdot \frac{1E+171/cm³}{{(1.5E+101/cm³)}^{2}})

0.7546 = (1.4E-23 \cdot \frac{300}{1.6E-19}) \cdot \ln (1E+16 \cdot \frac{1E+17}{{(1.5E+10)}^{2}})

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Junction Built-in Voltage VLSI Solution

Follow our step by step solution on how to calculate Junction Built-in Voltage VLSI?

FIRST Step Consider the formula

Ø 0 = ([BoltZ] \cdot \frac{T}{[Charge-e]}) \cdot \ln (N A \cdot \frac{N D}{{(N i)}^{2}})

Next Step Substitute values of Variables

∴

Ø 0 = ([BoltZ] \cdot \frac{300K}{[Charge-e]}) \cdot \ln (1E+161/cm³ \cdot \frac{1E+171/cm³}{{(1.5E+101/cm³)}^{2}})

Next Step Substitute values of Constants

∴

Ø 0 = (1.4E-23J/K \cdot \frac{300K}{1.6E-19C}) \cdot \ln (1E+161/cm³ \cdot \frac{1E+171/cm³}{{(1.5E+101/cm³)}^{2}})

Next Step Convert Units

∴

Ø 0 = (1.4E-23J/K \cdot \frac{300K}{1.6E-19C}) \cdot \ln (1E+221/m³ \cdot \frac{1E+231/m³}{{(1.5E+161/m³)}^{2}})

Next Step Prepare to Evaluate

∴

Ø 0 = (1.4E-23 \cdot \frac{300}{1.6E-19}) \cdot \ln (1E+22 \cdot \frac{1E+23}{{(1.5E+16)}^{2}})

Next Step Evaluate

∴

Ø 0 = 0.75463200359389V

LAST Step Rounding Answer

∴

Ø 0 = 0.7546V

Junction Built-in Voltage VLSI Formula Elements

Variables

Constants

Functions

Junction Built-in Voltage

Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied.

Symbol: Ø₀

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Junction Built-in Voltage

Temperature

Temperature reflects how hot or cold an object or environment is.

Symbol: T

Measurement: TemperatureUnit: K

Note: Value can be positive or negative.

Formulas to find Temperature

Acceptor Concentration

Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.

Symbol: N_A

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Acceptor Concentration

Donor concentration

Donor concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons.

Symbol: N_D

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Donor concentration

Intrinsic Concentration

Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.

Symbol: N_i

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Intrinsic Concentration

Boltzmann constant

Boltzmann constant relates the average kinetic energy of particles in a gas with the temperature of the gas and is a fundamental constant in statistical mechanics and thermodynamics.

Symbol: [BoltZ]

Value: 1.38064852E-23 J/K

Charge of electron

Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.

Symbol: [Charge-e]

Value: 1.60217662E-19 C

The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function.

Syntax: ln(Number)

Other formulas in VLSI Material Optimization category

Go Body Effect Coefficient

γ = mod \underset{̲}{u} s (\frac{V t - V t0}{\sqrt{Φ s + (V sb)} - \sqrt{Φ s}})

Go Channel Charge

Q ch = C g \cdot (V gc - V t)

Go Critical Voltage

V x = E x \cdot E ch

Go DIBL Coefficient

η = \frac{V t0 - V t}{V ds}

How to Evaluate Junction Built-in Voltage VLSI?

Junction Built-in Voltage VLSI evaluator uses Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2) to evaluate the Junction Built-in Voltage, The Junction Built-in Voltage VLSI formula is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied. Junction Built-in Voltage is denoted by Ø₀ symbol.

How to evaluate Junction Built-in Voltage VLSI using this online evaluator? To use this online evaluator for Junction Built-in Voltage VLSI, enter Temperature (T), Acceptor Concentration (N_A), Donor concentration (N_D) & Intrinsic Concentration (N_i) and hit the calculate button.

FAQs on Junction Built-in Voltage VLSI

What is the formula to find Junction Built-in Voltage VLSI?

The formula of Junction Built-in Voltage VLSI is expressed as Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2). Here is an example- 0.754632 = ([BoltZ]*300/[Charge-e])*ln(1E+22*1E+23/(1.45E+16)^2).

How to calculate Junction Built-in Voltage VLSI?

With Temperature (T), Acceptor Concentration (N_A), Donor concentration (N_D) & Intrinsic Concentration (N_i) we can find Junction Built-in Voltage VLSI using the formula - Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2). This formula also uses Boltzmann constant, Charge of electron constant(s) and Natural Logarithm (ln) function(s).

Can the Junction Built-in Voltage VLSI be negative?

No, the Junction Built-in Voltage VLSI, measured in Electric Potential cannot be negative.

Which unit is used to measure Junction Built-in Voltage VLSI?

Junction Built-in Voltage VLSI is usually measured using the Volt[V] for Electric Potential. Millivolt[V], Microvolt[V], Nanovolt[V] are the few other units in which Junction Built-in Voltage VLSI can be measured.

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Junction Built-in Voltage VLSI Formula

Junction Built-in Voltage VLSI Example

Junction Built-in Voltage VLSI Solution

Junction Built-in Voltage VLSI Formula Elements

Other formulas in VLSI Material Optimization category

How to Evaluate Junction Built-in Voltage VLSI?

FAQs on Junction Built-in Voltage VLSI

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