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Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode. Check FAQs
Qp=-Cox(VGS-VT)
Qp - Inversion Layer Charge?Cox - Oxide Capacitance?VGS - Voltage between Gate and Source?VT - Threshold Voltage?

Inversion Layer Charge in PMOS Example

With values
With units
Only example

Here is how the Inversion Layer Charge in PMOS equation looks like with Values.

Here is how the Inversion Layer Charge in PMOS equation looks like with Units.

Here is how the Inversion Layer Charge in PMOS equation looks like.

-0.0017Edit=-0.0008Edit(2.86Edit-0.7Edit)
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Inversion Layer Charge in PMOS Solution

Follow our step by step solution on how to calculate Inversion Layer Charge in PMOS?

FIRST Step Consider the formula
Qp=-Cox(VGS-VT)
Next Step Substitute values of Variables
Qp=-0.0008F(2.86V-0.7V)
Next Step Prepare to Evaluate
Qp=-0.0008(2.86-0.7)
Next Step Evaluate
Qp=-0.001728C/m²
LAST Step Rounding Answer
Qp=-0.0017C/m²

Inversion Layer Charge in PMOS Formula Elements

Variables
Inversion Layer Charge
Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.
Symbol: Qp
Measurement: Surface Charge DensityUnit: C/m²
Note: Value can be positive or negative.
Oxide Capacitance
Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Symbol: Cox
Measurement: CapacitanceUnit: F
Note: Value can be positive or negative.
Voltage between Gate and Source
The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.
Symbol: VGS
Measurement: Electric PotentialUnit: V
Note: Value can be positive or negative.
Threshold Voltage
Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
Symbol: VT
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.

Other Formulas to find Inversion Layer Charge

​Go Inversion Layer Charge at Pinch-Off Condition in PMOS
Qp=-Cox(VGS-VT-VDS)

Other formulas in P Channel Enhancement category

​Go Drain Current in Triode Region of PMOS Transistor
Id=k'pWL((VGS-modu̲s(VT))VDS-12(VDS)2)
​Go Drain Current in Triode Region of PMOS Transistor given Vsd
Id=k'pWL(modu̲s(Vov)-12VDS)VDS
​Go Drain Current in Saturation Region of PMOS Transistor
Ids=12k'pWL(VGS-modu̲s(VT))2
​Go Drain Current in Saturation Region of PMOS Transistor given Vov
Ids=12k'pWL(Vov)2

How to Evaluate Inversion Layer Charge in PMOS?

Inversion Layer Charge in PMOS evaluator uses Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage) to evaluate the Inversion Layer Charge, The Inversion Layer Charge in PMOS formula is defined as Inversion layer charge in a p-channel metal-oxide-semiconductor field-effect transistor (PMOS) refers to the accumulation of negatively charged carriers (electrons) at the interface between the p-type semiconductor substrate and the insulating layer (oxide) when a voltage is applied to the gate terminal. Inversion Layer Charge is denoted by Qp symbol.

How to evaluate Inversion Layer Charge in PMOS using this online evaluator? To use this online evaluator for Inversion Layer Charge in PMOS, enter Oxide Capacitance (Cox), Voltage between Gate and Source (VGS) & Threshold Voltage (VT) and hit the calculate button.

FAQs on Inversion Layer Charge in PMOS

What is the formula to find Inversion Layer Charge in PMOS?
The formula of Inversion Layer Charge in PMOS is expressed as Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage). Here is an example- -0.001728 = -0.0008*(2.86-0.7).
How to calculate Inversion Layer Charge in PMOS?
With Oxide Capacitance (Cox), Voltage between Gate and Source (VGS) & Threshold Voltage (VT) we can find Inversion Layer Charge in PMOS using the formula - Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage).
What are the other ways to Calculate Inversion Layer Charge?
Here are the different ways to Calculate Inversion Layer Charge-
  • Inversion Layer Charge=-Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)OpenImg
Can the Inversion Layer Charge in PMOS be negative?
Yes, the Inversion Layer Charge in PMOS, measured in Surface Charge Density can be negative.
Which unit is used to measure Inversion Layer Charge in PMOS?
Inversion Layer Charge in PMOS is usually measured using the Coulomb per Square Meter[C/m²] for Surface Charge Density. Coulomb per Square Centimeter[C/m²], Coulomb per Square Inch[C/m²], Abcoulomb per Square Meter[C/m²] are the few other units in which Inversion Layer Charge in PMOS can be measured.
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