Inversion Layer Charge in PMOS evaluator uses Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage) to evaluate the Inversion Layer Charge, The Inversion Layer Charge in PMOS formula is defined as Inversion layer charge in a p-channel metal-oxide-semiconductor field-effect transistor (PMOS) refers to the accumulation of negatively charged carriers (electrons) at the interface between the p-type semiconductor substrate and the insulating layer (oxide) when a voltage is applied to the gate terminal. Inversion Layer Charge is denoted by Qp symbol.
How to evaluate Inversion Layer Charge in PMOS using this online evaluator? To use this online evaluator for Inversion Layer Charge in PMOS, enter Oxide Capacitance (Cox), Voltage between Gate and Source (VGS) & Threshold Voltage (VT) and hit the calculate button.