Instantaneous Drain Current using Voltage between Drain and Source evaluator uses Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source to evaluate the Drain Current, The Instantaneous drain current using voltage between drain and source indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices. However, the rated maximum drain current should not be allowed to flow to the chip. Drain Current is denoted by id symbol.
How to evaluate Instantaneous Drain Current using Voltage between Drain and Source using this online evaluator? To use this online evaluator for Instantaneous Drain Current using Voltage between Drain and Source, enter Transconductance Parameter (Kn), Voltage across Oxide (Vox), Threshold Voltage (Vt) & Voltage between Gate and Source (Vgs) and hit the calculate button.