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Impurity with Intrinsic Concentration Formula

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Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material. Check FAQs

n i = \sqrt{\frac{n e \cdot p}{t o}}

n_i - Intrinsic Concentration?n_e - Electron Concentration?p - Hole Concentration?t_o - Temperature Impurity?

Impurity with Intrinsic Concentration Example

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Here is how the Impurity with Intrinsic Concentration equation looks like with Values.

Here is how the Impurity with Intrinsic Concentration equation looks like with Units.

Here is how the Impurity with Intrinsic Concentration equation looks like.

1.3212 = \sqrt{\frac{50.6 \cdot 0.69}{20}}

1.32121/cm³ = \sqrt{\frac{50.61/cm³ \cdot 0.691/cm³}{20K}}

1.3212 = \sqrt{\frac{50.6 \cdot 0.69}{20}}

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Impurity with Intrinsic Concentration Solution

Follow our step by step solution on how to calculate Impurity with Intrinsic Concentration?

FIRST Step Consider the formula

n i = \sqrt{\frac{n e \cdot p}{t o}}

Next Step Substitute values of Variables

∴

n i = \sqrt{\frac{50.61/cm³ \cdot 0.691/cm³}{20K}}

Next Step Convert Units

∴

n i = \sqrt{\frac{5.1E+71/m³ \cdot 6900001/m³}{20K}}

Next Step Prepare to Evaluate

∴

n i = \sqrt{\frac{5.1E+7 \cdot 690000}{20}}

Next Step Evaluate

∴

n i = 1321249.408703751/m³

Next Step Convert to Output's Unit

∴

n i = 1.321249408703751/cm³

LAST Step Rounding Answer

∴

n i = 1.32121/cm³

Impurity with Intrinsic Concentration Formula Elements

Variables

Functions

Intrinsic Concentration

Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

Symbol: n_i

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Intrinsic Concentration

Electron Concentration

Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields.

Symbol: n_e

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Electron Concentration

Hole Concentration

Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device.

Symbol: p

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value should be greater than 0.

Formulas to find Hole Concentration

Temperature Impurity

Temperature Impurity a base index representing the average air temperature over different timescales.

Symbol: t_o

Measurement: TemperatureUnit: K

Note: Value should be greater than 0.

Formulas to find Temperature Impurity

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in Bipolar IC Fabrication category

Go Ohmic Conductivity of Impurity

σ = q \cdot (μ n \cdot n e + μ p \cdot p)

Go Breakout Voltage of Collector Emitter

V ce = \frac{V cb}{{(i g)}^{\frac{1}{n}}}

Go Conductivity of N-Type

σ = q \cdot (μ n \cdot N d + μ p \cdot (\frac{{n i}^{2}}{N d}))

Go Conductivity of P-Type

σ = q \cdot (μ n \cdot (\frac{{n i}^{2}}{N a}) + μ p \cdot N a)

How to Evaluate Impurity with Intrinsic Concentration?

Impurity with Intrinsic Concentration evaluator uses Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity) to evaluate the Intrinsic Concentration, The Impurity With Intrinsic Concentration formula is defined as some impurity (either trivalent or pentavalent) is added to intrinsic semiconductor it will increase the concentration or density of charge carriers (either holes or electrons) and which in turn increase its conductivity. Intrinsic Concentration is denoted by n_i symbol.

How to evaluate Impurity with Intrinsic Concentration using this online evaluator? To use this online evaluator for Impurity with Intrinsic Concentration, enter Electron Concentration (n_e), Hole Concentration (p) & Temperature Impurity (t_o) and hit the calculate button.

FAQs on Impurity with Intrinsic Concentration

What is the formula to find Impurity with Intrinsic Concentration?

The formula of Impurity with Intrinsic Concentration is expressed as Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity). Here is an example- 1.2E-6 = sqrt((50600000*690000)/20).

How to calculate Impurity with Intrinsic Concentration?

With Electron Concentration (n_e), Hole Concentration (p) & Temperature Impurity (t_o) we can find Impurity with Intrinsic Concentration using the formula - Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity). This formula also uses Square Root (sqrt) function(s).

Can the Impurity with Intrinsic Concentration be negative?

No, the Impurity with Intrinsic Concentration, measured in Carrier Concentration cannot be negative.

Which unit is used to measure Impurity with Intrinsic Concentration?

Impurity with Intrinsic Concentration is usually measured using the 1 per Cubic Centimeter[1/cm³] for Carrier Concentration. 1 per Cubic Meter[1/cm³], per Liter[1/cm³] are the few other units in which Impurity with Intrinsic Concentration can be measured.

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Impurity with Intrinsic Concentration Formula

Impurity with Intrinsic Concentration Example

Impurity with Intrinsic Concentration Solution

Impurity with Intrinsic Concentration Formula Elements

Other formulas in Bipolar IC Fabrication category

How to Evaluate Impurity with Intrinsic Concentration?

FAQs on Impurity with Intrinsic Concentration

Variable Name