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Gate Source Capacitance of FET Formula

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Gate Source Capacitance FET is the capacitance between the gate and source terminals of an FET. Check FAQs

C gs(fet) = \frac{T gs-off(fet)}{{(1 - (\frac{V ds(fet)}{Ψ 0(fet)}))}^{\frac{1}{3}}}

C_gs(fet) - Gate Source Capacitance FET?T_gs-off(fet) - Gate Source Capacitance Off Time FET?V_ds(fet) - Drain Source Voltage FET?Ψ_0(fet) - Surface Potential FET?

Gate Source Capacitance of FET Example

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Here is how the Gate Source Capacitance of FET equation looks like with Values.

Here is how the Gate Source Capacitance of FET equation looks like with Units.

Here is how the Gate Source Capacitance of FET equation looks like.

6.8057 = \frac{2.234}{{(1 - (\frac{4.8}{4.976}))}^{\frac{1}{3}}}

6.8057F = \frac{2.234s}{{(1 - (\frac{4.8V}{4.976V}))}^{\frac{1}{3}}}

6.8057 = \frac{2.234}{{(1 - (\frac{4.8}{4.976}))}^{\frac{1}{3}}}

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Gate Source Capacitance of FET Solution

Follow our step by step solution on how to calculate Gate Source Capacitance of FET?

FIRST Step Consider the formula

C gs(fet) = \frac{T gs-off(fet)}{{(1 - (\frac{V ds(fet)}{Ψ 0(fet)}))}^{\frac{1}{3}}}

Next Step Substitute values of Variables

∴

C gs(fet) = \frac{2.234s}{{(1 - (\frac{4.8V}{4.976V}))}^{\frac{1}{3}}}

Next Step Prepare to Evaluate

∴

C gs(fet) = \frac{2.234}{{(1 - (\frac{4.8}{4.976}))}^{\frac{1}{3}}}

Next Step Evaluate

∴

C gs(fet) = 6.80569376657684F

LAST Step Rounding Answer

∴

C gs(fet) = 6.8057F

Gate Source Capacitance of FET Formula Elements

Variables

Gate Source Capacitance FET

Gate Source Capacitance FET is the capacitance between the gate and source terminals of an FET.

Symbol: C_gs(fet)

Measurement: CapacitanceUnit: F

Note: Value should be greater than 0.

Formulas to find Gate Source Capacitance FET

Gate Source Capacitance Off Time FET

Gate Source Capacitance Off Time FET refers to the time required for the gate-to-source capacitance to discharge, a critical parameter for controlling switching speed and power efficiency.

Symbol: T_gs-off(fet)

Measurement: TimeUnit: s

Note: Value should be greater than 0.

Formulas to find Gate Source Capacitance Off Time FET

Drain Source Voltage FET

Drain Source Voltage FET is the voltage between the drain and the source terminal of an FET.

Symbol: V_ds(fet)

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Drain Source Voltage FET

Surface Potential FET

Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.

Symbol: Ψ_0(fet)

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Surface Potential FET

Other formulas in FET category

Go Pinch off Voltage of FET

V off(fet) = V ds-off(fet) - V ds(fet)

Go Drain Current of FET

I d(fet) = I dss(fet) \cdot {(1 - \frac{V ds(fet)}{V cut-off(fet)})}^{2}

Go Transconductance of FET

G m(fet) = \frac{2 \cdot I dss(fet)}{V off(fet)} \cdot (1 - \frac{V ds(fet)}{V off(fet)})

Go Drain Source Voltage of FET

V ds(fet) = V dd(fet) - I d(fet) \cdot (R d(fet) + R s(fet))

How to Evaluate Gate Source Capacitance of FET?

Gate Source Capacitance of FET evaluator uses Gate Source Capacitance FET = Gate Source Capacitance Off Time FET/(1-(Drain Source Voltage FET/Surface Potential FET))^(1/3) to evaluate the Gate Source Capacitance FET, Gate Source Capacitance of FET is the capacitance between the gate and source terminals of the FET. It is caused by the thin layer of oxide that insulates the gate from the channel. C_gs is a parasitic capacitance that can affect the performance of FET circuits. When a FET is switched from the off state to the on state, the gate capacitance needs to be charged. The faster the gate capacitance is charged, the faster the FET will switch on. The value of Cgs will affect the charging time of the gate capacitance, and therefore the switching speed of the FET. Gate Source Capacitance FET is denoted by C_gs(fet) symbol.

How to evaluate Gate Source Capacitance of FET using this online evaluator? To use this online evaluator for Gate Source Capacitance of FET, enter Gate Source Capacitance Off Time FET (T_gs-off(fet)), Drain Source Voltage FET (V_ds(fet)) & Surface Potential FET (Ψ_0(fet)) and hit the calculate button.

FAQs on Gate Source Capacitance of FET

What is the formula to find Gate Source Capacitance of FET?

The formula of Gate Source Capacitance of FET is expressed as Gate Source Capacitance FET = Gate Source Capacitance Off Time FET/(1-(Drain Source Voltage FET/Surface Potential FET))^(1/3). Here is an example- 6.805694 = 2.234/(1-(4.8/4.976))^(1/3).

How to calculate Gate Source Capacitance of FET?

With Gate Source Capacitance Off Time FET (T_gs-off(fet)), Drain Source Voltage FET (V_ds(fet)) & Surface Potential FET (Ψ_0(fet)) we can find Gate Source Capacitance of FET using the formula - Gate Source Capacitance FET = Gate Source Capacitance Off Time FET/(1-(Drain Source Voltage FET/Surface Potential FET))^(1/3).

Can the Gate Source Capacitance of FET be negative?

No, the Gate Source Capacitance of FET, measured in Capacitance cannot be negative.

Which unit is used to measure Gate Source Capacitance of FET?

Gate Source Capacitance of FET is usually measured using the Farad[F] for Capacitance. Kilofarad[F], Millifarad[F], Microfarad[F] are the few other units in which Gate Source Capacitance of FET can be measured.

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Gate Source Capacitance of FET Formula

Gate Source Capacitance of FET Example

Gate Source Capacitance of FET Solution

Gate Source Capacitance of FET Formula Elements

Other formulas in FET category

How to Evaluate Gate Source Capacitance of FET?

FAQs on Gate Source Capacitance of FET

Variable Name