Gate Leakage through Gate Dielectric Formula

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Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance. Check FAQs
ig=(PstVbc)-(ist+icon+ij)
ig - Gate Current?Pst - CMOS Static Power?Vbc - Base Collector Voltage?ist - Subthreshold Current?icon - Contention Current?ij - Junction Current?

Gate Leakage through Gate Dielectric Example

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With units
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Here is how the Gate Leakage through Gate Dielectric equation looks like with Values.

Here is how the Gate Leakage through Gate Dielectric equation looks like with Units.

Here is how the Gate Leakage through Gate Dielectric equation looks like.

4.5015Edit=(67.37Edit2.02Edit)-(1.6Edit+25.75Edit+1.5Edit)
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Gate Leakage through Gate Dielectric Solution

Follow our step by step solution on how to calculate Gate Leakage through Gate Dielectric?

FIRST Step Consider the formula
ig=(PstVbc)-(ist+icon+ij)
Next Step Substitute values of Variables
ig=(67.37mW2.02V)-(1.6mA+25.75mA+1.5mA)
Next Step Convert Units
ig=(0.0674W2.02V)-(0.0016A+0.0258A+0.0015A)
Next Step Prepare to Evaluate
ig=(0.06742.02)-(0.0016+0.0258+0.0015)
Next Step Evaluate
ig=0.00450148514851485A
Next Step Convert to Output's Unit
ig=4.50148514851485mA
LAST Step Rounding Answer
ig=4.5015mA

Gate Leakage through Gate Dielectric Formula Elements

Variables
Gate Current
Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.
Symbol: ig
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.
CMOS Static Power
CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices.
Symbol: Pst
Measurement: PowerUnit: mW
Note: Value should be greater than 0.
Base Collector Voltage
Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Symbol: Vbc
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Subthreshold Current
Subthreshold Current is subthreshold leakage through OFF transistors.
Symbol: ist
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.
Contention Current
Contention Current is defined as the contention current occuring in the ratioed circuits.
Symbol: icon
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.
Junction Current
Junction Current is junction leakage from source/drain diffusions.
Symbol: ij
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.

Other formulas in CMOS Power Metrics category

​Go Activity Factor
α=PsCVbc2f
​Go Switching Power
Ps=α(CVbc2f)
​Go Dynamic Power in CMOS
Pdyn=Psc+Ps
​Go Short-Circuit Power in CMOS
Psc=Pdyn-Ps

How to Evaluate Gate Leakage through Gate Dielectric?

Gate Leakage through Gate Dielectric evaluator uses Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current) to evaluate the Gate Current, The gate leakage through gate dielectric formula is calculated when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current. This is because of a very high drain-source impedance. Gate Current is denoted by ig symbol.

How to evaluate Gate Leakage through Gate Dielectric using this online evaluator? To use this online evaluator for Gate Leakage through Gate Dielectric, enter CMOS Static Power (Pst), Base Collector Voltage (Vbc), Subthreshold Current (ist), Contention Current (icon) & Junction Current (ij) and hit the calculate button.

FAQs on Gate Leakage through Gate Dielectric

What is the formula to find Gate Leakage through Gate Dielectric?
The formula of Gate Leakage through Gate Dielectric is expressed as Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current). Here is an example- 25131.49 = (0.06737/2.02)-(0.0016+0.02575+0.0015).
How to calculate Gate Leakage through Gate Dielectric?
With CMOS Static Power (Pst), Base Collector Voltage (Vbc), Subthreshold Current (ist), Contention Current (icon) & Junction Current (ij) we can find Gate Leakage through Gate Dielectric using the formula - Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current).
Can the Gate Leakage through Gate Dielectric be negative?
No, the Gate Leakage through Gate Dielectric, measured in Electric Current cannot be negative.
Which unit is used to measure Gate Leakage through Gate Dielectric?
Gate Leakage through Gate Dielectric is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Gate Leakage through Gate Dielectric can be measured.
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