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Gate Drain Capacitance of FET Formula

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Gate Drain Capacitance FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions. Check FAQs

C gd(fet) = \frac{T gd-off(fet)}{{(1 - \frac{V gd(fet)}{Ψ 0(fet)})}^{\frac{1}{3}}}

C_gd(fet) - Gate Drain Capacitance FET?T_gd-off(fet) - Gate Drain Capacitance Off Time FET?V_gd(fet) - Gate to Drain Voltage FET?Ψ_0(fet) - Surface Potential FET?

Gate Drain Capacitance of FET Example

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Here is how the Gate Drain Capacitance of FET equation looks like with Values.

Here is how the Gate Drain Capacitance of FET equation looks like with Units.

Here is how the Gate Drain Capacitance of FET equation looks like.

6.4756 = \frac{6.47}{{(1 - \frac{0.0128}{4.976})}^{\frac{1}{3}}}

6.4756F = \frac{6.47s}{{(1 - \frac{0.0128V}{4.976V})}^{\frac{1}{3}}}

6.4756 = \frac{6.47}{{(1 - \frac{0.0128}{4.976})}^{\frac{1}{3}}}

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Gate Drain Capacitance of FET Solution

Follow our step by step solution on how to calculate Gate Drain Capacitance of FET?

FIRST Step Consider the formula

C gd(fet) = \frac{T gd-off(fet)}{{(1 - \frac{V gd(fet)}{Ψ 0(fet)})}^{\frac{1}{3}}}

Next Step Substitute values of Variables

∴

C gd(fet) = \frac{6.47s}{{(1 - \frac{0.0128V}{4.976V})}^{\frac{1}{3}}}

Next Step Prepare to Evaluate

∴

C gd(fet) = \frac{6.47}{{(1 - \frac{0.0128}{4.976})}^{\frac{1}{3}}}

Next Step Evaluate

∴

C gd(fet) = 6.47555722841382F

LAST Step Rounding Answer

∴

C gd(fet) = 6.4756F

Gate Drain Capacitance of FET Formula Elements

Variables

Gate Drain Capacitance FET

Gate Drain Capacitance FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions.

Symbol: C_gd(fet)

Measurement: CapacitanceUnit: F

Note: Value should be greater than 0.

Formulas to find Gate Drain Capacitance FET

Gate Drain Capacitance Off Time FET

Gate Drain Capacitance Off Time FET denotes the duration for the gate-to-drain capacitance to discharge, influencing switching characteristics and power efficiency in electronic circuits.

Symbol: T_gd-off(fet)

Measurement: TimeUnit: s

Note: Value should be greater than 0.

Formulas to find Gate Drain Capacitance Off Time FET

Gate to Drain Voltage FET

Gate to Drain Voltage FET is the voltage difference between the gate and drain terminals of an FET.

Symbol: V_gd(fet)

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Gate to Drain Voltage FET

Surface Potential FET

Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.

Symbol: Ψ_0(fet)

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Surface Potential FET

Other formulas in FET category

Go Pinch off Voltage of FET

V off(fet) = V ds-off(fet) - V ds(fet)

Go Drain Current of FET

I d(fet) = I dss(fet) \cdot {(1 - \frac{V ds(fet)}{V cut-off(fet)})}^{2}

Go Transconductance of FET

G m(fet) = \frac{2 \cdot I dss(fet)}{V off(fet)} \cdot (1 - \frac{V ds(fet)}{V off(fet)})

Go Drain Source Voltage of FET

V ds(fet) = V dd(fet) - I d(fet) \cdot (R d(fet) + R s(fet))

How to Evaluate Gate Drain Capacitance of FET?

Gate Drain Capacitance of FET evaluator uses Gate Drain Capacitance FET = Gate Drain Capacitance Off Time FET/(1-Gate to Drain Voltage FET/Surface Potential FET)^(1/3) to evaluate the Gate Drain Capacitance FET, Gate Drain Capacitance of FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions is a parasitic capacitance that can affect the performance of FET circuits. Use a gate driver with a higher output current. This will help to charge and discharge the gate capacitance more quickly. C_gd can affect the switching speed, gain, and bandwidth of FET circuits. A higher Cgd can slow down the switching speed and reduce the gain and bandwidth of the circuit. Gate Drain Capacitance FET is denoted by C_gd(fet) symbol.

How to evaluate Gate Drain Capacitance of FET using this online evaluator? To use this online evaluator for Gate Drain Capacitance of FET, enter Gate Drain Capacitance Off Time FET (T_gd-off(fet)), Gate to Drain Voltage FET (V_gd(fet)) & Surface Potential FET (Ψ_0(fet)) and hit the calculate button.

FAQs on Gate Drain Capacitance of FET

What is the formula to find Gate Drain Capacitance of FET?

The formula of Gate Drain Capacitance of FET is expressed as Gate Drain Capacitance FET = Gate Drain Capacitance Off Time FET/(1-Gate to Drain Voltage FET/Surface Potential FET)^(1/3). Here is an example- 6.475557 = 6.47/(1-0.0128/4.976)^(1/3).

How to calculate Gate Drain Capacitance of FET?

With Gate Drain Capacitance Off Time FET (T_gd-off(fet)), Gate to Drain Voltage FET (V_gd(fet)) & Surface Potential FET (Ψ_0(fet)) we can find Gate Drain Capacitance of FET using the formula - Gate Drain Capacitance FET = Gate Drain Capacitance Off Time FET/(1-Gate to Drain Voltage FET/Surface Potential FET)^(1/3).

Can the Gate Drain Capacitance of FET be negative?

No, the Gate Drain Capacitance of FET, measured in Capacitance cannot be negative.

Which unit is used to measure Gate Drain Capacitance of FET?

Gate Drain Capacitance of FET is usually measured using the Farad[F] for Capacitance. Kilofarad[F], Millifarad[F], Microfarad[F] are the few other units in which Gate Drain Capacitance of FET can be measured.

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Gate Drain Capacitance of FET Formula

Gate Drain Capacitance of FET Example

Gate Drain Capacitance of FET Solution

Gate Drain Capacitance of FET Formula Elements

Other formulas in FET category

How to Evaluate Gate Drain Capacitance of FET?

FAQs on Gate Drain Capacitance of FET

Variable Name