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Fabrication Process Parameter of NMOS Formula

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The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface. Check FAQs

γ = \frac{\sqrt{2 \cdot [Charge-e] \cdot N P \cdot [Permitivity-vacuum]}}{C ox}

γ - Fabrication Process Parameter?N_P - Doping Concentration of P Substrate?C_ox - Oxide Capacitance?[Charge-e] - Charge of electron?[Permitivity-vacuum] - Permittivity of vacuum?

Fabrication Process Parameter of NMOS Example

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Here is how the Fabrication Process Parameter of NMOS equation looks like with Values.

Here is how the Fabrication Process Parameter of NMOS equation looks like with Units.

Here is how the Fabrication Process Parameter of NMOS equation looks like.

204.2049 = \frac{\sqrt{2 \cdot 1.6E-19 \cdot 6E+16 \cdot 8.9E-12}}{2.02}

204.2049 = \frac{\sqrt{2 \cdot 1.6E-19C \cdot 6E+161/cm³ \cdot 8.9E-12F/m}}{2.02μF}

204.2049 = \frac{\sqrt{2 \cdot 1.6E-19 \cdot 6E+16 \cdot 8.9E-12}}{2.02}

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Fabrication Process Parameter of NMOS Solution

Follow our step by step solution on how to calculate Fabrication Process Parameter of NMOS?

FIRST Step Consider the formula

γ = \frac{\sqrt{2 \cdot [Charge-e] \cdot N P \cdot [Permitivity-vacuum]}}{C ox}

Next Step Substitute values of Variables

∴

γ = \frac{\sqrt{2 \cdot [Charge-e] \cdot 6E+161/cm³ \cdot [Permitivity-vacuum]}}{2.02μF}

Next Step Substitute values of Constants

∴

γ = \frac{\sqrt{2 \cdot 1.6E-19C \cdot 6E+161/cm³ \cdot 8.9E-12F/m}}{2.02μF}

Next Step Convert Units

∴

γ = \frac{\sqrt{2 \cdot 1.6E-19C \cdot 6E+221/m³ \cdot 8.9E-12F/m}}{2E-6F}

Next Step Prepare to Evaluate

∴

γ = \frac{\sqrt{2 \cdot 1.6E-19 \cdot 6E+22 \cdot 8.9E-12}}{2E-6}

Next Step Evaluate

∴

γ = 204.204864690003

LAST Step Rounding Answer

∴

γ = 204.2049

Fabrication Process Parameter of NMOS Formula Elements

Variables

Constants

Functions

Fabrication Process Parameter

The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.

Symbol: γ

Measurement: NAUnit: Unitless

Note: Value can be positive or negative.

Formulas to find Fabrication Process Parameter

Doping Concentration of P Substrate

The doping concentration of P substrate is the number of impurities added to the substrate. It is the total concentration of acceptor ions.

Symbol: N_P

Measurement: Carrier ConcentrationUnit: 1/cm³

Note: Value can be positive or negative.

Formulas to find Doping Concentration of P Substrate

Oxide Capacitance

Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

Symbol: C_ox

Measurement: CapacitanceUnit: μF

Note: Value can be positive or negative.

Formulas to find Oxide Capacitance

Charge of electron

Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.

Symbol: [Charge-e]

Value: 1.60217662E-19 C

Permittivity of vacuum

Permittivity of vacuum is a fundamental physical constant that describes the ability of a vacuum to permit the transmission of electric field lines.

Symbol: [Permitivity-vacuum]

Value: 8.85E-12 F/m

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in N Channel Enhancement category

Go Electron Drift Velocity of Channel in NMOS Transistor

v d = μ n \cdot E L

Go NMOS as Linear Resistance

r DS = \frac{L}{μ n \cdot C ox \cdot W c \cdot (V gs - V T)}

Go Current Entering Drain Terminal of NMOS given Gate Source Voltage

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {V ds}^{2})

Go Current Entering Drain-Source in Triode Region of NMOS

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {(V ds)}^{2})

How to Evaluate Fabrication Process Parameter of NMOS?

Fabrication Process Parameter of NMOS evaluator uses Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance to evaluate the Fabrication Process Parameter, The Fabrication process parameter of NMOS is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface. Fabrication Process Parameter is denoted by γ symbol.

How to evaluate Fabrication Process Parameter of NMOS using this online evaluator? To use this online evaluator for Fabrication Process Parameter of NMOS, enter Doping Concentration of P Substrate (N_P) & Oxide Capacitance (C_ox) and hit the calculate button.

FAQs on Fabrication Process Parameter of NMOS

What is the formula to find Fabrication Process Parameter of NMOS?

The formula of Fabrication Process Parameter of NMOS is expressed as Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance. Here is an example- 204.2049 = sqrt(2*[Charge-e]*6E+22*[Permitivity-vacuum])/2.02E-06.

How to calculate Fabrication Process Parameter of NMOS?

With Doping Concentration of P Substrate (N_P) & Oxide Capacitance (C_ox) we can find Fabrication Process Parameter of NMOS using the formula - Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance. This formula also uses Charge of electron, Permittivity of vacuum constant(s) and Square Root (sqrt) function(s).

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Fabrication Process Parameter of NMOS Formula

Fabrication Process Parameter of NMOS Example

Fabrication Process Parameter of NMOS Solution

Fabrication Process Parameter of NMOS Formula Elements

Other formulas in N Channel Enhancement category

How to Evaluate Fabrication Process Parameter of NMOS?

FAQs on Fabrication Process Parameter of NMOS

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