Equivalent Oxide Thickness Formula

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Equivalent Oxide Thickness is a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device. Check FAQs
EOT=thigh-k(3.9khigh-k)
EOT - Equivalent Oxide Thickness?thigh-k - Thickness of Material?khigh-k - Dielectric Constant of Material?

Equivalent Oxide Thickness Example

With values
With units
Only example

Here is how the Equivalent Oxide Thickness equation looks like with Values.

Here is how the Equivalent Oxide Thickness equation looks like with Units.

Here is how the Equivalent Oxide Thickness equation looks like.

14.6681Edit=8.5Edit(3.92.26Edit)
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Equivalent Oxide Thickness Solution

Follow our step by step solution on how to calculate Equivalent Oxide Thickness?

FIRST Step Consider the formula
EOT=thigh-k(3.9khigh-k)
Next Step Substitute values of Variables
EOT=8.5nm(3.92.26)
Next Step Convert Units
EOT=8.5E-9m(3.92.26)
Next Step Prepare to Evaluate
EOT=8.5E-9(3.92.26)
Next Step Evaluate
EOT=1.46681415929204E-08m
Next Step Convert to Output's Unit
EOT=14.6681415929204nm
LAST Step Rounding Answer
EOT=14.6681nm

Equivalent Oxide Thickness Formula Elements

Variables
Equivalent Oxide Thickness
Equivalent Oxide Thickness is a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device.
Symbol: EOT
Measurement: LengthUnit: nm
Note: Value should be greater than 0.
Thickness of Material
Thickness of Material is the thickness of the given material. It refers to the physical dimension of an object measured perpendicular to its surface.
Symbol: thigh-k
Measurement: LengthUnit: nm
Note: Value should be greater than 0.
Dielectric Constant of Material
Dielectric Constant of Material is a measure of a material's ability to store electrical energy in an electric field.
Symbol: khigh-k
Measurement: NAUnit: Unitless
Note: Value should be greater than 0.

Other formulas in MOS IC Fabrication category

​Go Body Effect in MOSFET
Vt=Vth+γ(2Φf+Vbs-2Φf)
​Go MOSFET Unity-Gain Frequency
ft=gmCgs+Cgd
​Go Drain Current of MOSFET at Saturation Region
Id=β2(Vgs-Vth)2(1+λiVds)
​Go Channel Resistance
Rch=LtWt1μnQon

How to Evaluate Equivalent Oxide Thickness?

Equivalent Oxide Thickness evaluator uses Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material) to evaluate the Equivalent Oxide Thickness, The Equivalent Oxide Thickness is defined as a measure used in semiconductor technology to characterize the insulating properties of a gate dielectric in a metal-oxide-semiconductor (MOS) device, such as a MOSFET. Equivalent Oxide Thickness is denoted by EOT symbol.

How to evaluate Equivalent Oxide Thickness using this online evaluator? To use this online evaluator for Equivalent Oxide Thickness, enter Thickness of Material (thigh-k) & Dielectric Constant of Material (khigh-k) and hit the calculate button.

FAQs on Equivalent Oxide Thickness

What is the formula to find Equivalent Oxide Thickness?
The formula of Equivalent Oxide Thickness is expressed as Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material). Here is an example- 1.5E+10 = 8.5E-09*(3.9/2.26).
How to calculate Equivalent Oxide Thickness?
With Thickness of Material (thigh-k) & Dielectric Constant of Material (khigh-k) we can find Equivalent Oxide Thickness using the formula - Equivalent Oxide Thickness = Thickness of Material*(3.9/Dielectric Constant of Material).
Can the Equivalent Oxide Thickness be negative?
No, the Equivalent Oxide Thickness, measured in Length cannot be negative.
Which unit is used to measure Equivalent Oxide Thickness?
Equivalent Oxide Thickness is usually measured using the Nanometer[nm] for Length. Meter[nm], Millimeter[nm], Kilometer[nm] are the few other units in which Equivalent Oxide Thickness can be measured.
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