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Effective Capacitance in CMOS Formula

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Effective Capacitance in CMOS is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential. Check FAQs

C eff = D \cdot \frac{i off \cdot (10^{V bc})}{N g \cdot [BoltZ] \cdot V bc}

C_eff - Effective Capacitance in CMOS?D - Duty Cycle?i_off - Off Current?V_bc - Base Collector Voltage?N_g - Gates on Critical Path?[BoltZ] - Boltzmann constant?

Effective Capacitance in CMOS Example

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Here is how the Effective Capacitance in CMOS equation looks like with Values.

Here is how the Effective Capacitance in CMOS equation looks like with Units.

Here is how the Effective Capacitance in CMOS equation looks like.

5.1379 = 1.3E-25 \cdot \frac{0.01 \cdot (10^{2.02})}{0.95 \cdot 1.4E-23 \cdot 2.02}

5.1379μF = 1.3E-25 \cdot \frac{0.01mA \cdot (10^{2.02V})}{0.95 \cdot 1.4E-23J/K \cdot 2.02V}

5.1379 = 1.3E-25 \cdot \frac{0.01 \cdot (10^{2.02})}{0.95 \cdot 1.4E-23 \cdot 2.02}

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Effective Capacitance in CMOS Solution

Follow our step by step solution on how to calculate Effective Capacitance in CMOS?

FIRST Step Consider the formula

C eff = D \cdot \frac{i off \cdot (10^{V bc})}{N g \cdot [BoltZ] \cdot V bc}

Next Step Substitute values of Variables

∴

C eff = 1.3E-25 \cdot \frac{0.01mA \cdot (10^{2.02V})}{0.95 \cdot [BoltZ] \cdot 2.02V}

Next Step Substitute values of Constants

∴

C eff = 1.3E-25 \cdot \frac{0.01mA \cdot (10^{2.02V})}{0.95 \cdot 1.4E-23J/K \cdot 2.02V}

Next Step Convert Units

∴

C eff = 1.3E-25 \cdot \frac{1E-5A \cdot (10^{2.02V})}{0.95 \cdot 1.4E-23J/K \cdot 2.02V}

Next Step Prepare to Evaluate

∴

C eff = 1.3E-25 \cdot \frac{1E-5 \cdot (10^{2.02})}{0.95 \cdot 1.4E-23 \cdot 2.02}

Next Step Evaluate

∴

C eff = 5.13789525162511E-06F

Next Step Convert to Output's Unit

∴

C eff = 5.13789525162511μF

LAST Step Rounding Answer

∴

C eff = 5.1379μF

Effective Capacitance in CMOS Formula Elements

Variables

Constants

Effective Capacitance in CMOS

Effective Capacitance in CMOS is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential.

Symbol: C_eff

Measurement: CapacitanceUnit: μF

Note: Value should be greater than 0.

Formulas to find Effective Capacitance in CMOS

Duty Cycle

A Duty cycle or power cycle is the fraction of one period in which a signal or system is active.

Symbol: D

Measurement: NAUnit: Unitless

Note: Value should be greater than 0.

Formulas to find Duty Cycle

Off Current

Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current.

Symbol: i_off

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Off Current

Base Collector Voltage

Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.

Symbol: V_bc

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Base Collector Voltage

Gates on Critical Path

Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.

Symbol: N_g

Measurement: NAUnit: Unitless

Note: Value should be greater than 0.

Formulas to find Gates on Critical Path

Boltzmann constant

Boltzmann constant relates the average kinetic energy of particles in a gas with the temperature of the gas and is a fundamental constant in statistical mechanics and thermodynamics.

Symbol: [BoltZ]

Value: 1.38064852E-23 J/K

Other formulas in CMOS Circuit Characteristics category

Go CMOS Critical Voltage

V c = E c \cdot L

Go CMOS Mean Free Path

L = \frac{V c}{E c}

Go Width of Source Diffusion

W = \frac{A s}{D s}

Go Area of Source Diffusion

A s = D s \cdot W

How to Evaluate Effective Capacitance in CMOS?

Effective Capacitance in CMOS evaluator uses Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage) to evaluate the Effective Capacitance in CMOS, The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential. Effective Capacitance in CMOS is denoted by C_eff symbol.

How to evaluate Effective Capacitance in CMOS using this online evaluator? To use this online evaluator for Effective Capacitance in CMOS, enter Duty Cycle (D), Off Current (i_off), Base Collector Voltage (V_bc) & Gates on Critical Path (N_g) and hit the calculate button.

FAQs on Effective Capacitance in CMOS

What is the formula to find Effective Capacitance in CMOS?

The formula of Effective Capacitance in CMOS is expressed as Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage). Here is an example- 5.1E+6 = 1.3E-25*(1E-05*(10^(2.02)))/(0.95*[BoltZ]*2.02).

How to calculate Effective Capacitance in CMOS?

With Duty Cycle (D), Off Current (i_off), Base Collector Voltage (V_bc) & Gates on Critical Path (N_g) we can find Effective Capacitance in CMOS using the formula - Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage). This formula also uses Boltzmann constant .

Can the Effective Capacitance in CMOS be negative?

No, the Effective Capacitance in CMOS, measured in Capacitance cannot be negative.

Which unit is used to measure Effective Capacitance in CMOS?

Effective Capacitance in CMOS is usually measured using the Microfarad[μF] for Capacitance. Farad[μF], Kilofarad[μF], Millifarad[μF] are the few other units in which Effective Capacitance in CMOS can be measured.

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Effective Capacitance in CMOS Formula

Effective Capacitance in CMOS Example

Effective Capacitance in CMOS Solution

Effective Capacitance in CMOS Formula Elements

Other formulas in CMOS Circuit Characteristics category

How to Evaluate Effective Capacitance in CMOS?

FAQs on Effective Capacitance in CMOS

Variable Name