Drift Current Density due to Holes evaluator uses Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity to evaluate the Drift Current Density due to Holes, The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor. Drift Current Density due to Holes is denoted by Jp symbol.
How to evaluate Drift Current Density due to Holes using this online evaluator? To use this online evaluator for Drift Current Density due to Holes, enter Hole Concentration (p), Hole Mobility (μp) & Electric Field Intensity (Ei) and hit the calculate button.