Drain Saturation Current of MOSFET Formula

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Saturation drain current is an important parameter in the design & analysis of MOSFET, as it determines the max current that can be handled by the MOSFET without exceed its safe operating limits. Check FAQs
Id(sat)=12k'pWcL(Veff)2
Id(sat) - Saturation Drain Current?k'p - Process Transconductance in PMOS?Wc - Channel Width?L - Channel Length?Veff - Effective Voltage?

Drain Saturation Current of MOSFET Example

With values
With units
Only example

Here is how the Drain Saturation Current of MOSFET equation looks like with Values.

Here is how the Drain Saturation Current of MOSFET equation looks like with Units.

Here is how the Drain Saturation Current of MOSFET equation looks like.

0.0838Edit=120.58Edit10Edit100Edit(1.7Edit)2
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Drain Saturation Current of MOSFET Solution

Follow our step by step solution on how to calculate Drain Saturation Current of MOSFET?

FIRST Step Consider the formula
Id(sat)=12k'pWcL(Veff)2
Next Step Substitute values of Variables
Id(sat)=120.58mS10μm100μm(1.7V)2
Next Step Convert Units
Id(sat)=120.0006S1E-5m0.0001m(1.7V)2
Next Step Prepare to Evaluate
Id(sat)=120.00061E-50.0001(1.7)2
Next Step Evaluate
Id(sat)=8.381E-05A
Next Step Convert to Output's Unit
Id(sat)=0.08381mA
LAST Step Rounding Answer
Id(sat)=0.0838mA

Drain Saturation Current of MOSFET Formula Elements

Variables
Saturation Drain Current
Saturation drain current is an important parameter in the design & analysis of MOSFET, as it determines the max current that can be handled by the MOSFET without exceed its safe operating limits.
Symbol: Id(sat)
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.
Process Transconductance in PMOS
Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage.
Symbol: k'p
Measurement: Electric ConductanceUnit: mS
Note: Value can be positive or negative.
Channel Width
Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Symbol: Wc
Measurement: LengthUnit: μm
Note: Value should be greater than 0.
Channel Length
Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).
Symbol: L
Measurement: LengthUnit: μm
Note: Value should be greater than 0.
Effective Voltage
The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.
Symbol: Veff
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.

Other formulas in Current category

​Go First Drain Current of MOSFET on Large-Signal Operation
Id1=Ib2+IbVovVid21-Vid24Vov2
​Go Second Drain Current of MOSFET on Large-Signal Operation
Id2=Ib2-IbVovVid21-(Vid)24Vov2
​Go Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage
id=(IbVov)(Vid2)
​Go First Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage
Id1=Ib2+IbVovVid2

How to Evaluate Drain Saturation Current of MOSFET?

Drain Saturation Current of MOSFET evaluator uses Saturation Drain Current = 1/2*Process Transconductance in PMOS*Channel Width/Channel Length*(Effective Voltage)^2 to evaluate the Saturation Drain Current, The Drain saturation current of MOSFET here "saturation" in MOSFETs means that change in VDS will not produce a significant change in the Id (drain current). You can think about MOSFET in saturation as a current source. Saturation Drain Current is denoted by Id(sat) symbol.

How to evaluate Drain Saturation Current of MOSFET using this online evaluator? To use this online evaluator for Drain Saturation Current of MOSFET, enter Process Transconductance in PMOS (k'p), Channel Width (Wc), Channel Length (L) & Effective Voltage (Veff) and hit the calculate button.

FAQs on Drain Saturation Current of MOSFET

What is the formula to find Drain Saturation Current of MOSFET?
The formula of Drain Saturation Current of MOSFET is expressed as Saturation Drain Current = 1/2*Process Transconductance in PMOS*Channel Width/Channel Length*(Effective Voltage)^2. Here is an example- 83.81 = 1/2*0.00058*1E-05/0.0001*(1.7)^2.
How to calculate Drain Saturation Current of MOSFET?
With Process Transconductance in PMOS (k'p), Channel Width (Wc), Channel Length (L) & Effective Voltage (Veff) we can find Drain Saturation Current of MOSFET using the formula - Saturation Drain Current = 1/2*Process Transconductance in PMOS*Channel Width/Channel Length*(Effective Voltage)^2.
Can the Drain Saturation Current of MOSFET be negative?
No, the Drain Saturation Current of MOSFET, measured in Electric Current cannot be negative.
Which unit is used to measure Drain Saturation Current of MOSFET?
Drain Saturation Current of MOSFET is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Drain Saturation Current of MOSFET can be measured.
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