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Drain Current without Channel-Length Modulation of MOSFET Formula

GoDrain Current of MOSFET on Large-Signal Operation given Overdrive Voltage Formula

GoDrain Current in Load Line Formula

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Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits. Check FAQs

i d = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V gs - V th)}^{2}

i_d - Drain Current?k'_p - Process Transconductance in PMOS?WL - Aspect Ratio?V_gs - Gate-Source Voltage?V_th - Threshold Voltage?

Drain Current without Channel-Length Modulation of MOSFET Example

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Here is how the Drain Current without Channel-Length Modulation of MOSFET equation looks like with Values.

Here is how the Drain Current without Channel-Length Modulation of MOSFET equation looks like with Units.

Here is how the Drain Current without Channel-Length Modulation of MOSFET equation looks like.

0.0838 = \frac{1}{2} \cdot 0.58 \cdot 0.1 \cdot {(4 - 2.3)}^{2}

0.0838mA = \frac{1}{2} \cdot 0.58mS \cdot 0.1 \cdot {(4V - 2.3V)}^{2}

0.0838 = \frac{1}{2} \cdot 0.58 \cdot 0.1 \cdot {(4 - 2.3)}^{2}

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Drain Current without Channel-Length Modulation of MOSFET Solution

Follow our step by step solution on how to calculate Drain Current without Channel-Length Modulation of MOSFET?

FIRST Step Consider the formula

i d = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V gs - V th)}^{2}

Next Step Substitute values of Variables

∴

i d = \frac{1}{2} \cdot 0.58mS \cdot 0.1 \cdot {(4V - 2.3V)}^{2}

Next Step Convert Units

∴

i d = \frac{1}{2} \cdot 0.0006S \cdot 0.1 \cdot {(4V - 2.3V)}^{2}

Next Step Prepare to Evaluate

∴

i d = \frac{1}{2} \cdot 0.0006 \cdot 0.1 \cdot {(4 - 2.3)}^{2}

Next Step Evaluate

∴

i d = 8.381E-05A

Next Step Convert to Output's Unit

∴

i d = 0.08381mA

LAST Step Rounding Answer

∴

i d = 0.0838mA

Drain Current without Channel-Length Modulation of MOSFET Formula Elements

Variables

Drain Current

Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits.

Symbol: i_d

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Drain Current

Process Transconductance in PMOS

Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage.

Symbol: k'_p

Measurement: Electric ConductanceUnit: mS

Note: Value can be positive or negative.

Formulas to find Process Transconductance in PMOS

Aspect Ratio

Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.

Symbol: WL

Measurement: NAUnit: Unitless

Note: Value can be positive or negative.

Formulas to find Aspect Ratio

Gate-Source Voltage

Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.

Symbol: V_gs

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Gate-Source Voltage

Threshold Voltage

Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

Symbol: V_th

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Threshold Voltage

Other Formulas to find Drain Current

Go Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

i d = (\frac{I b}{V ov}) \cdot (\frac{V id}{2})

Go Drain Current in Load Line

i d = \frac{V dd - V ds}{R L}

Go Instantaneous Drain Current with respect to DC Component of Vgs

i d = K n \cdot ({(V c - V t)}^{2})

Go Instantaneous Drain Current

i d = K n \cdot {(V gsq - V t + V c)}^{2}

Other formulas in Current category

Go First Drain Current of MOSFET on Large-Signal Operation

I d1 = \frac{I b}{2} + \frac{I b}{V ov} \cdot \frac{V id}{2} \cdot \sqrt{1 - \frac{{V id}^{2}}{4 \cdot {V ov}^{2}}}

Go Second Drain Current of MOSFET on Large-Signal Operation

I d2 = \frac{I b}{2} - \frac{I b}{V ov} \cdot \frac{V id}{2} \cdot \sqrt{1 - \frac{{(V id)}^{2}}{4 \cdot {V ov}^{2}}}

Go First Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

I d1 = \frac{I b}{2} + \frac{I b}{V ov} \cdot \frac{V id}{2}

Go Second Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

I d2 = \frac{I b}{2} - \frac{I b}{V ov} \cdot \frac{V id}{2}

How to Evaluate Drain Current without Channel-Length Modulation of MOSFET?

Drain Current without Channel-Length Modulation of MOSFET evaluator uses Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2 to evaluate the Drain Current, The Drain current without channel-length modulation of MOSFET is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In effect, then, the MOSFET operates as a voltage-controlled current source. Drain Current is denoted by i_d symbol.

How to evaluate Drain Current without Channel-Length Modulation of MOSFET using this online evaluator? To use this online evaluator for Drain Current without Channel-Length Modulation of MOSFET, enter Process Transconductance in PMOS (k'_p), Aspect Ratio (WL), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th) and hit the calculate button.

FAQs on Drain Current without Channel-Length Modulation of MOSFET

What is the formula to find Drain Current without Channel-Length Modulation of MOSFET?

The formula of Drain Current without Channel-Length Modulation of MOSFET is expressed as Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2. Here is an example- 83.81 = 1/2*0.00058*0.1*(4-2.3)^2.

How to calculate Drain Current without Channel-Length Modulation of MOSFET?

With Process Transconductance in PMOS (k'_p), Aspect Ratio (WL), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th) we can find Drain Current without Channel-Length Modulation of MOSFET using the formula - Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2.

What are the other ways to Calculate Drain Current?

Here are the different ways to Calculate Drain Current-

Drain Current=(DC Bias Current/Overdrive Voltage)*(Differential Input Signal/2)
Drain Current=(Supply Voltage-Drain Source Voltage)/Load Resistance
Drain Current=Transconductance Parameter*((Critical Voltage-Total Voltage)^2)

Can the Drain Current without Channel-Length Modulation of MOSFET be negative?

No, the Drain Current without Channel-Length Modulation of MOSFET, measured in Electric Current cannot be negative.

Which unit is used to measure Drain Current without Channel-Length Modulation of MOSFET?

Drain Current without Channel-Length Modulation of MOSFET is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Drain Current without Channel-Length Modulation of MOSFET can be measured.

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Drain Current without Channel-Length Modulation of MOSFET Formula

​GoDrain Current of MOSFET on Large-Signal Operation given Overdrive Voltage Formula

​GoDrain Current in Load Line Formula

Drain Current without Channel-Length Modulation of MOSFET Example

Drain Current without Channel-Length Modulation of MOSFET Solution

Drain Current without Channel-Length Modulation of MOSFET Formula Elements

Other Formulas to find Drain Current

Other formulas in Current category

How to Evaluate Drain Current without Channel-Length Modulation of MOSFET?

FAQs on Drain Current without Channel-Length Modulation of MOSFET

Variable Name

GoDrain Current of MOSFET on Large-Signal Operation given Overdrive Voltage Formula

GoDrain Current in Load Line Formula