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Drain Current when NMOS Operates as Voltage-Controlled Current Source Formula

GoCurrent Entering Drain Terminal of NMOS given Gate Source Voltage Formula

GoCurrent Entering Drain-Source in Triode Region of NMOS Formula

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Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Check FAQs

I d = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V gs - V T)}^{2}

I_d - Drain Current in NMOS?k'_n - Process Transconductance Parameter in NMOS?W_c - Width of Channel?L - Length of the Channel?V_gs - Gate Source Voltage?V_T - Threshold Voltage?

Drain Current when NMOS Operates as Voltage-Controlled Current Source Example

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Here is how the Drain Current when NMOS Operates as Voltage-Controlled Current Source equation looks like with Values.

Here is how the Drain Current when NMOS Operates as Voltage-Controlled Current Source equation looks like with Units.

Here is how the Drain Current when NMOS Operates as Voltage-Controlled Current Source equation looks like.

239.7013 = \frac{1}{2} \cdot 2 \cdot \frac{10}{3} \cdot {(10.3 - 1.82)}^{2}

239.7013mA = \frac{1}{2} \cdot 2mS \cdot \frac{10μm}{3μm} \cdot {(10.3V - 1.82V)}^{2}

239.7013 = \frac{1}{2} \cdot 2 \cdot \frac{10}{3} \cdot {(10.3 - 1.82)}^{2}

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Drain Current when NMOS Operates as Voltage-Controlled Current Source Solution

Follow our step by step solution on how to calculate Drain Current when NMOS Operates as Voltage-Controlled Current Source?

FIRST Step Consider the formula

I d = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V gs - V T)}^{2}

Next Step Substitute values of Variables

∴

I d = \frac{1}{2} \cdot 2mS \cdot \frac{10μm}{3μm} \cdot {(10.3V - 1.82V)}^{2}

Next Step Convert Units

∴

I d = \frac{1}{2} \cdot 0.002S \cdot \frac{1E-5m}{3E-6m} \cdot {(10.3V - 1.82V)}^{2}

Next Step Prepare to Evaluate

∴

I d = \frac{1}{2} \cdot 0.002 \cdot \frac{1E-5}{3E-6} \cdot {(10.3 - 1.82)}^{2}

Next Step Evaluate

∴

I d = 0.239701333333333A

Next Step Convert to Output's Unit

∴

I d = 239.701333333333mA

LAST Step Rounding Answer

∴

I d = 239.7013mA

Drain Current when NMOS Operates as Voltage-Controlled Current Source Formula Elements

Variables

Drain Current in NMOS

Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).

Symbol: I_d

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Drain Current in NMOS

Process Transconductance Parameter in NMOS

The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.

Symbol: k'_n

Measurement: Electric ConductanceUnit: mS

Note: Value can be positive or negative.

Formulas to find Process Transconductance Parameter in NMOS

Width of Channel

The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.

Symbol: W_c

Measurement: LengthUnit: μm

Note: Value can be positive or negative.

Formulas to find Width of Channel

Length of the Channel

Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.

Symbol: L

Measurement: LengthUnit: μm

Note: Value can be positive or negative.

Formulas to find Length of the Channel

Gate Source Voltage

The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.

Symbol: V_gs

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Gate Source Voltage

Threshold Voltage

Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

Symbol: V_T

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Threshold Voltage

Other Formulas to find Drain Current in NMOS

Go Current Entering Drain Terminal of NMOS given Gate Source Voltage

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {V ds}^{2})

Go Current Entering Drain-Source in Triode Region of NMOS

I d = k' n \cdot \frac{W c}{L} \cdot ((V gs - V T) \cdot V ds - \frac{1}{2} \cdot {(V ds)}^{2})

Go Current Entering Drain-Source at Saturation Region of NMOS

I d = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V gs - V T)}^{2}

Go Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

I d = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V ds)}^{2}

Other formulas in N Channel Enhancement category

Go Electron Drift Velocity of Channel in NMOS Transistor

v d = μ n \cdot E L

Go NMOS as Linear Resistance

r DS = \frac{L}{μ n \cdot C ox \cdot W c \cdot (V gs - V T)}

Go Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

I ds = \frac{1}{2} \cdot k' n \cdot \frac{W c}{L} \cdot {(V ov)}^{2}

Go Positive Voltage given Channel Length in NMOS

V = V A \cdot L

How to Evaluate Drain Current when NMOS Operates as Voltage-Controlled Current Source?

Drain Current when NMOS Operates as Voltage-Controlled Current Source evaluator uses Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2 to evaluate the Drain Current in NMOS, The Drain Current when NMOS operates as Voltage-Controlled Current Source is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In saturation the drain current is constantly determined by and is independent of constant-current source where the value of the current is determined. The MOSFET operates as a voltage-controlled current source. Drain Current in NMOS is denoted by I_d symbol.

How to evaluate Drain Current when NMOS Operates as Voltage-Controlled Current Source using this online evaluator? To use this online evaluator for Drain Current when NMOS Operates as Voltage-Controlled Current Source, enter Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L), Gate Source Voltage (V_gs) & Threshold Voltage (V_T) and hit the calculate button.

FAQs on Drain Current when NMOS Operates as Voltage-Controlled Current Source

What is the formula to find Drain Current when NMOS Operates as Voltage-Controlled Current Source?

The formula of Drain Current when NMOS Operates as Voltage-Controlled Current Source is expressed as Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2. Here is an example- 239701.3 = 1/2*0.002*1E-05/3E-06*(10.3-1.82)^2.

How to calculate Drain Current when NMOS Operates as Voltage-Controlled Current Source?

With Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L), Gate Source Voltage (V_gs) & Threshold Voltage (V_T) we can find Drain Current when NMOS Operates as Voltage-Controlled Current Source using the formula - Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2.

What are the other ways to Calculate Drain Current in NMOS?

Here are the different ways to Calculate Drain Current in NMOS-

Drain Current in NMOS=Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)
Drain Current in NMOS=Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)
Drain Current in NMOS=1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Can the Drain Current when NMOS Operates as Voltage-Controlled Current Source be negative?

No, the Drain Current when NMOS Operates as Voltage-Controlled Current Source, measured in Electric Current cannot be negative.

Which unit is used to measure Drain Current when NMOS Operates as Voltage-Controlled Current Source?

Drain Current when NMOS Operates as Voltage-Controlled Current Source is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Drain Current when NMOS Operates as Voltage-Controlled Current Source can be measured.

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Drain Current when NMOS Operates as Voltage-Controlled Current Source Formula

​GoCurrent Entering Drain Terminal of NMOS given Gate Source Voltage Formula

​GoCurrent Entering Drain-Source in Triode Region of NMOS Formula

Drain Current when NMOS Operates as Voltage-Controlled Current Source Example

Drain Current when NMOS Operates as Voltage-Controlled Current Source Solution

Drain Current when NMOS Operates as Voltage-Controlled Current Source Formula Elements

Other Formulas to find Drain Current in NMOS

Other formulas in N Channel Enhancement category

How to Evaluate Drain Current when NMOS Operates as Voltage-Controlled Current Source?

FAQs on Drain Current when NMOS Operates as Voltage-Controlled Current Source

Variable Name

GoCurrent Entering Drain Terminal of NMOS given Gate Source Voltage Formula

GoCurrent Entering Drain-Source in Triode Region of NMOS Formula