Drain Current of MOSFET at Saturation Region evaluator uses Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage) to evaluate the Drain Current, The Drain Current of MOSFET at Saturation Region is defined as the phenomena where the effective channel length increases with an increase in the drain-to-source voltage . Drain Current is denoted by Id symbol.
How to evaluate Drain Current of MOSFET at Saturation Region using this online evaluator? To use this online evaluator for Drain Current of MOSFET at Saturation Region, enter Transconductance Parameter (β), Gate Source Voltage (Vgs), Threshold Voltage with Zero Body Bias (Vth), Channel Length Modulation Factor (λi) & Drain Source Voltage (Vds) and hit the calculate button.