Drain Current of MOSFET at Saturation Region Formula

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Drain Current refers to the current flowing between the drain and source terminals of the transistor when it's in operation. Check FAQs
Id=β2(Vgs-Vth)2(1+λiVds)
Id - Drain Current?β - Transconductance Parameter?Vgs - Gate Source Voltage?Vth - Threshold Voltage with Zero Body Bias?λi - Channel Length Modulation Factor?Vds - Drain Source Voltage?

Drain Current of MOSFET at Saturation Region Example

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With units
Only example

Here is how the Drain Current of MOSFET at Saturation Region equation looks like with Values.

Here is how the Drain Current of MOSFET at Saturation Region equation looks like with Units.

Here is how the Drain Current of MOSFET at Saturation Region equation looks like.

0.0137Edit=0.0025Edit2(2.45Edit-3.4Edit)2(1+9Edit1.24Edit)
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Drain Current of MOSFET at Saturation Region Solution

Follow our step by step solution on how to calculate Drain Current of MOSFET at Saturation Region?

FIRST Step Consider the formula
Id=β2(Vgs-Vth)2(1+λiVds)
Next Step Substitute values of Variables
Id=0.0025S2(2.45V-3.4V)2(1+91.24V)
Next Step Prepare to Evaluate
Id=0.00252(2.45-3.4)2(1+91.24)
Next Step Evaluate
Id=0.013718A
LAST Step Rounding Answer
Id=0.0137A

Drain Current of MOSFET at Saturation Region Formula Elements

Variables
Drain Current
Drain Current refers to the current flowing between the drain and source terminals of the transistor when it's in operation.
Symbol: Id
Measurement: Electric CurrentUnit: A
Note: Value should be greater than 0.
Transconductance Parameter
Transconductance Parameter is defined as the ratio of the change in the output current to the change in the input voltage of a device.
Symbol: β
Measurement: Electric ConductanceUnit: S
Note: Value should be greater than 0.
Gate Source Voltage
Gate Source Voltage refers to the potential difference between the gate terminal and the source terminal of the device. This voltage plays a crucial role in controlling the conductivity of the MOSFET.
Symbol: Vgs
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Threshold Voltage with Zero Body Bias
Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).
Symbol: Vth
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.
Channel Length Modulation Factor
Channel Length Modulation Factor where the effective channel length increases with an increase in the drain-to-source voltage.
Symbol: λi
Measurement: NAUnit: Unitless
Note: Value should be greater than 0.
Drain Source Voltage
Drain Source Voltage is the voltage accross drain and source terminal.
Symbol: Vds
Measurement: Electric PotentialUnit: V
Note: Value should be greater than 0.

Other formulas in MOS IC Fabrication category

​Go Body Effect in MOSFET
Vt=Vth+γ(2Φf+Vbs-2Φf)
​Go MOSFET Unity-Gain Frequency
ft=gmCgs+Cgd
​Go Channel Resistance
Rch=LtWt1μnQon
​Go Propagation Time
Tp=0.7N(N+12)RmCl

How to Evaluate Drain Current of MOSFET at Saturation Region?

Drain Current of MOSFET at Saturation Region evaluator uses Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage) to evaluate the Drain Current, The Drain Current of MOSFET at Saturation Region is defined as the phenomena where the effective channel length increases with an increase in the drain-to-source voltage . Drain Current is denoted by Id symbol.

How to evaluate Drain Current of MOSFET at Saturation Region using this online evaluator? To use this online evaluator for Drain Current of MOSFET at Saturation Region, enter Transconductance Parameter (β), Gate Source Voltage (Vgs), Threshold Voltage with Zero Body Bias (Vth), Channel Length Modulation Factor i) & Drain Source Voltage (Vds) and hit the calculate button.

FAQs on Drain Current of MOSFET at Saturation Region

What is the formula to find Drain Current of MOSFET at Saturation Region?
The formula of Drain Current of MOSFET at Saturation Region is expressed as Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage). Here is an example- 0.013718 = 0.0025/2*(2.45-3.4)^2*(1+9*1.24).
How to calculate Drain Current of MOSFET at Saturation Region?
With Transconductance Parameter (β), Gate Source Voltage (Vgs), Threshold Voltage with Zero Body Bias (Vth), Channel Length Modulation Factor i) & Drain Source Voltage (Vds) we can find Drain Current of MOSFET at Saturation Region using the formula - Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage).
Can the Drain Current of MOSFET at Saturation Region be negative?
No, the Drain Current of MOSFET at Saturation Region, measured in Electric Current cannot be negative.
Which unit is used to measure Drain Current of MOSFET at Saturation Region?
Drain Current of MOSFET at Saturation Region is usually measured using the Ampere[A] for Electric Current. Milliampere[A], Microampere[A], Centiampere[A] are the few other units in which Drain Current of MOSFET at Saturation Region can be measured.
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