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Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Check FAQs
Id=k'pWL(modu̲s(Vov)-12VDS)VDS
Id - Drain Current?k'p - Process Transconductance Parameter in PMOS?WL - Aspect Ratio?Vov - Effective Voltage?VDS - Voltage between Drain and Source?

Drain Current in Triode Region of PMOS Transistor given Vsd Example

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With units
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Here is how the Drain Current in Triode Region of PMOS Transistor given Vsd equation looks like with Values.

Here is how the Drain Current in Triode Region of PMOS Transistor given Vsd equation looks like with Units.

Here is how the Drain Current in Triode Region of PMOS Transistor given Vsd equation looks like.

28.8635Edit=2.1Edit6Edit(modu̲s(2.16Edit)-122.45Edit)2.45Edit
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Drain Current in Triode Region of PMOS Transistor given Vsd Solution

Follow our step by step solution on how to calculate Drain Current in Triode Region of PMOS Transistor given Vsd?

FIRST Step Consider the formula
Id=k'pWL(modu̲s(Vov)-12VDS)VDS
Next Step Substitute values of Variables
Id=2.1mS6(modu̲s(2.16V)-122.45V)2.45V
Next Step Convert Units
Id=0.0021S6(modu̲s(2.16V)-122.45V)2.45V
Next Step Prepare to Evaluate
Id=0.00216(modu̲s(2.16)-122.45)2.45
Next Step Evaluate
Id=0.02886345A
Next Step Convert to Output's Unit
Id=28.86345mA
LAST Step Rounding Answer
Id=28.8635mA

Drain Current in Triode Region of PMOS Transistor given Vsd Formula Elements

Variables
Functions
Drain Current
Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Symbol: Id
Measurement: Electric CurrentUnit: mA
Note: Value should be greater than 0.
Process Transconductance Parameter in PMOS
The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Symbol: k'p
Measurement: Electric ConductanceUnit: mS
Note: Value can be positive or negative.
Aspect Ratio
Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Symbol: WL
Measurement: NAUnit: Unitless
Note: Value should be greater than 0.
Effective Voltage
Effective voltage is the equivalent DC voltage that would produce the same amount of power dissipation in a resistive load as the AC voltage being measured.
Symbol: Vov
Measurement: Electric PotentialUnit: V
Note: Value can be positive or negative.
Voltage between Drain and Source
The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS.
Symbol: VDS
Measurement: Electric PotentialUnit: V
Note: Value can be positive or negative.
modulus
Modulus of a number is the remainder when that number is divided by another number.
Syntax: modulus

Other Formulas to find Drain Current

​Go Drain Current in Triode Region of PMOS Transistor
Id=k'pWL((VGS-modu̲s(VT))VDS-12(VDS)2)
​Go Overall Drain Current of PMOS Transistor
Id=12k'pWL(VGS-modu̲s(VT))2(1+VDSmodu̲s(Va))
​Go Current in Inversion Channel of PMOS
Id=(WQpVy)
​Go Drain Current from Source to Drain
Id=(WQpμpEy)

Other formulas in P Channel Enhancement category

​Go Drain Current in Saturation Region of PMOS Transistor
Ids=12k'pWL(VGS-modu̲s(VT))2
​Go Drain Current in Saturation Region of PMOS Transistor given Vov
Ids=12k'pWL(Vov)2
​Go Process Transconductance Parameter of PMOS
k'p=μpCox
​Go Current in Inversion Channel of PMOS given Mobility
Vy=μpEy

How to Evaluate Drain Current in Triode Region of PMOS Transistor given Vsd?

Drain Current in Triode Region of PMOS Transistor given Vsd evaluator uses Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source to evaluate the Drain Current, The Drain current in triode region of PMOS transistor given Vsd where the source is the small voltage and the drain is the biggest voltage(they are interchangeable). In PMOS transistor holes are the charge carriers and current flows because of the holes. Drain Current is denoted by Id symbol.

How to evaluate Drain Current in Triode Region of PMOS Transistor given Vsd using this online evaluator? To use this online evaluator for Drain Current in Triode Region of PMOS Transistor given Vsd, enter Process Transconductance Parameter in PMOS (k'p), Aspect Ratio (WL), Effective Voltage (Vov) & Voltage between Drain and Source (VDS) and hit the calculate button.

FAQs on Drain Current in Triode Region of PMOS Transistor given Vsd

What is the formula to find Drain Current in Triode Region of PMOS Transistor given Vsd?
The formula of Drain Current in Triode Region of PMOS Transistor given Vsd is expressed as Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source. Here is an example- 28863.45 = 0.0021*6*(modulus(2.16)-1/2*2.45)*2.45.
How to calculate Drain Current in Triode Region of PMOS Transistor given Vsd?
With Process Transconductance Parameter in PMOS (k'p), Aspect Ratio (WL), Effective Voltage (Vov) & Voltage between Drain and Source (VDS) we can find Drain Current in Triode Region of PMOS Transistor given Vsd using the formula - Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source. This formula also uses Modulus (modulus) function(s).
What are the other ways to Calculate Drain Current?
Here are the different ways to Calculate Drain Current-
  • Drain Current=Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)OpenImg
  • Drain Current=1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))OpenImg
  • Drain Current=(Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)OpenImg
Can the Drain Current in Triode Region of PMOS Transistor given Vsd be negative?
No, the Drain Current in Triode Region of PMOS Transistor given Vsd, measured in Electric Current cannot be negative.
Which unit is used to measure Drain Current in Triode Region of PMOS Transistor given Vsd?
Drain Current in Triode Region of PMOS Transistor given Vsd is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Drain Current in Triode Region of PMOS Transistor given Vsd can be measured.
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