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Drain Current in Saturation Region of PMOS Transistor given Vov Formula

GoDrain Current in Saturation Region of PMOS Transistor Formula

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Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage. Check FAQs

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V ov)}^{2}

I_ds - Saturation Drain Current?k'_p - Process Transconductance Parameter in PMOS?WL - Aspect Ratio?V_ov - Effective Voltage?

Drain Current in Saturation Region of PMOS Transistor given Vov Example

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Here is how the Drain Current in Saturation Region of PMOS Transistor given Vov equation looks like with Values.

Here is how the Drain Current in Saturation Region of PMOS Transistor given Vov equation looks like with Units.

Here is how the Drain Current in Saturation Region of PMOS Transistor given Vov equation looks like.

29.3933 = \frac{1}{2} \cdot 2.1 \cdot 6 \cdot {(2.16)}^{2}

29.3933mA = \frac{1}{2} \cdot 2.1mS \cdot 6 \cdot {(2.16V)}^{2}

29.3933 = \frac{1}{2} \cdot 2.1 \cdot 6 \cdot {(2.16)}^{2}

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Drain Current in Saturation Region of PMOS Transistor given Vov Solution

Follow our step by step solution on how to calculate Drain Current in Saturation Region of PMOS Transistor given Vov?

FIRST Step Consider the formula

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V ov)}^{2}

Next Step Substitute values of Variables

∴

I ds = \frac{1}{2} \cdot 2.1mS \cdot 6 \cdot {(2.16V)}^{2}

Next Step Convert Units

∴

I ds = \frac{1}{2} \cdot 0.0021S \cdot 6 \cdot {(2.16V)}^{2}

Next Step Prepare to Evaluate

∴

I ds = \frac{1}{2} \cdot 0.0021 \cdot 6 \cdot {(2.16)}^{2}

Next Step Evaluate

∴

I ds = 0.02939328A

Next Step Convert to Output's Unit

∴

I ds = 29.39328mA

LAST Step Rounding Answer

∴

I ds = 29.3933mA

Drain Current in Saturation Region of PMOS Transistor given Vov Formula Elements

Variables

Saturation Drain Current

Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage.

Symbol: I_ds

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Saturation Drain Current

Process Transconductance Parameter in PMOS

The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.

Symbol: k'_p

Measurement: Electric ConductanceUnit: mS

Note: Value can be positive or negative.

Formulas to find Process Transconductance Parameter in PMOS

Aspect Ratio

Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.

Symbol: WL

Measurement: NAUnit: Unitless

Note: Value should be greater than 0.

Formulas to find Aspect Ratio

Effective Voltage

Effective voltage is the equivalent DC voltage that would produce the same amount of power dissipation in a resistive load as the AC voltage being measured.

Symbol: V_ov

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Effective Voltage

Other Formulas to find Saturation Drain Current

Go Drain Current in Saturation Region of PMOS Transistor

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2}

Other formulas in P Channel Enhancement category

Go Drain Current in Triode Region of PMOS Transistor

I d = k' p \cdot WL \cdot ((V GS - mod \underset{̲}{u} s (V T)) \cdot V DS - \frac{1}{2} \cdot {(V DS)}^{2})

Go Drain Current in Triode Region of PMOS Transistor given Vsd

I d = k' p \cdot WL \cdot (mod \underset{̲}{u} s (V ov) - \frac{1}{2} \cdot V DS) \cdot V DS

Go Overall Drain Current of PMOS Transistor

I d = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2} \cdot (1 + \frac{V DS}{mod} \underset{̲}{u} s (V a))

Go Process Transconductance Parameter of PMOS

k' p = μ p \cdot C ox

How to Evaluate Drain Current in Saturation Region of PMOS Transistor given Vov?

Drain Current in Saturation Region of PMOS Transistor given Vov evaluator uses Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2 to evaluate the Saturation Drain Current, The Drain current in saturation region of PMOS transistor given Vov, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation. Saturation Drain Current is denoted by I_ds symbol.

How to evaluate Drain Current in Saturation Region of PMOS Transistor given Vov using this online evaluator? To use this online evaluator for Drain Current in Saturation Region of PMOS Transistor given Vov, enter Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL) & Effective Voltage (V_ov) and hit the calculate button.

FAQs on Drain Current in Saturation Region of PMOS Transistor given Vov

What is the formula to find Drain Current in Saturation Region of PMOS Transistor given Vov?

The formula of Drain Current in Saturation Region of PMOS Transistor given Vov is expressed as Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2. Here is an example- 29393.28 = 1/2*0.0021*6*(2.16)^2.

How to calculate Drain Current in Saturation Region of PMOS Transistor given Vov?

With Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL) & Effective Voltage (V_ov) we can find Drain Current in Saturation Region of PMOS Transistor given Vov using the formula - Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2.

What are the other ways to Calculate Saturation Drain Current?

Here are the different ways to Calculate Saturation Drain Current-

Saturation Drain Current=1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Can the Drain Current in Saturation Region of PMOS Transistor given Vov be negative?

No, the Drain Current in Saturation Region of PMOS Transistor given Vov, measured in Electric Current cannot be negative.

Which unit is used to measure Drain Current in Saturation Region of PMOS Transistor given Vov?

Drain Current in Saturation Region of PMOS Transistor given Vov is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Drain Current in Saturation Region of PMOS Transistor given Vov can be measured.

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