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Drain Current in Saturation Region in MOS Transistor Formula

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Saturation Region Drain Current is the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode. Check FAQs

I D(sat) = W \cdot V d(sat) \cdot \int (q \cdot n x, x, 0, L eff)

I_D(sat) - Saturation Region Drain Current?W - Channel Width?V_d(sat) - Saturation Electron Drift Velocity?q - Charge?n_x - Short Channel Parameter?L_eff - Effective Channel Length?

Drain Current in Saturation Region in MOS Transistor Example

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Here is how the Drain Current in Saturation Region in MOS Transistor equation looks like with Values.

Here is how the Drain Current in Saturation Region in MOS Transistor equation looks like with Units.

Here is how the Drain Current in Saturation Region in MOS Transistor equation looks like.

184.2744 = 2.678 \cdot 5.773 \cdot \int (0.3 \cdot 5.12, x, 0, 7.76)

184.2744A = 2.678m \cdot 5.773m/s \cdot \int (0.3C \cdot 5.12, x, 0, 7.76m)

184.2744 = 2.678 \cdot 5.773 \cdot \int (0.3 \cdot 5.12, x, 0, 7.76)

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Drain Current in Saturation Region in MOS Transistor Solution

Follow our step by step solution on how to calculate Drain Current in Saturation Region in MOS Transistor?

FIRST Step Consider the formula

I D(sat) = W \cdot V d(sat) \cdot \int (q \cdot n x, x, 0, L eff)

Next Step Substitute values of Variables

∴

I D(sat) = 2.678m \cdot 5.773m/s \cdot \int (0.3C \cdot 5.12, x, 0, 7.76m)

Next Step Prepare to Evaluate

∴

I D(sat) = 2.678 \cdot 5.773 \cdot \int (0.3 \cdot 5.12, x, 0, 7.76)

Next Step Evaluate

∴

I D(sat) = 184.27442601984A

LAST Step Rounding Answer

∴

I D(sat) = 184.2744A

Drain Current in Saturation Region in MOS Transistor Formula Elements

Variables

Functions

Saturation Region Drain Current

Saturation Region Drain Current is the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode.

Symbol: I_D(sat)

Measurement: Electric CurrentUnit: A

Note: Value can be positive or negative.

Formulas to find Saturation Region Drain Current

Channel Width

Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.

Symbol: W

Measurement: LengthUnit: m

Note: Value can be positive or negative.

Formulas to find Channel Width

Saturation Electron Drift Velocity

Saturation Electron Drift Velocity represents the electron drift velocity at saturation in a MOSFET that is at low electric fields.

Symbol: V_d(sat)

Measurement: SpeedUnit: m/s

Note: Value can be positive or negative.

Formulas to find Saturation Electron Drift Velocity

Charge

A Charge is the fundamental property of forms of matter that exhibit electrostatic attraction or repulsion in the presence of other matter.

Symbol: q

Measurement: Electric ChargeUnit: C

Note: Value can be positive or negative.

Formulas to find Charge

Short Channel Parameter

Short Channel Parameter is a parameter (potentially model-specific) used to describe a characteristic of the channel region in a short-channel MOSFET.

Symbol: n_x

Measurement: NAUnit: Unitless

Note: Value can be positive or negative.

Formulas to find Short Channel Parameter

Effective Channel Length

Effective Channel Length is the portion of the channel that actively conducts current when the transistor is operating.

Symbol: L_eff

Measurement: LengthUnit: m

Note: Value can be positive or negative.

Formulas to find Effective Channel Length

int

The definite integral can be used to calculate net signed area, which is the area above the x -axis minus the area below the x -axis.

Syntax: int(expr, arg, from, to)

Other formulas in MOS Transistor category

Go Zero Bias Sidewall Junction Capacitance per Unit Length

C jsw = C j0sw \cdot x j

Go Equivalent Large Signal Junction Capacitance

C eq(sw) = P \cdot C jsw \cdot K eq(sw)

Go Fermi Potential for P Type

Φ Fp = \frac{[BoltZ] \cdot T a}{[Charge-e]} \cdot \ln (\frac{n i}{N A})

Go Sidewall Voltage Equivalence Factor

K eq(sw) = - (2 \cdot \frac{\sqrt{Φ osw}}{V 2 - V 1} \cdot (\sqrt{Φ osw - V 2} - \sqrt{Φ osw - V 1}))

How to Evaluate Drain Current in Saturation Region in MOS Transistor?

Drain Current in Saturation Region in MOS Transistor evaluator uses Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length) to evaluate the Saturation Region Drain Current, The Drain Current in Saturation Region in MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal when the transistor is operating in a specific mode. Saturation Region Drain Current is denoted by I_D(sat) symbol.

How to evaluate Drain Current in Saturation Region in MOS Transistor using this online evaluator? To use this online evaluator for Drain Current in Saturation Region in MOS Transistor, enter Channel Width (W), Saturation Electron Drift Velocity (V_d(sat)), Charge (q), Short Channel Parameter (n_x) & Effective Channel Length (L_eff) and hit the calculate button.

FAQs on Drain Current in Saturation Region in MOS Transistor

What is the formula to find Drain Current in Saturation Region in MOS Transistor?

The formula of Drain Current in Saturation Region in MOS Transistor is expressed as Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length). Here is an example- 184.2744 = 2.678*5.773*int(0.3*5.12,x,0,7.76).

How to calculate Drain Current in Saturation Region in MOS Transistor?

With Channel Width (W), Saturation Electron Drift Velocity (V_d(sat)), Charge (q), Short Channel Parameter (n_x) & Effective Channel Length (L_eff) we can find Drain Current in Saturation Region in MOS Transistor using the formula - Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length). This formula also uses Definite Integral (int) function(s).

Can the Drain Current in Saturation Region in MOS Transistor be negative?

Yes, the Drain Current in Saturation Region in MOS Transistor, measured in Electric Current can be negative.

Which unit is used to measure Drain Current in Saturation Region in MOS Transistor?

Drain Current in Saturation Region in MOS Transistor is usually measured using the Ampere[A] for Electric Current. Milliampere[A], Microampere[A], Centiampere[A] are the few other units in which Drain Current in Saturation Region in MOS Transistor can be measured.

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Drain Current in Saturation Region in MOS Transistor Formula

Drain Current in Saturation Region in MOS Transistor Example

Drain Current in Saturation Region in MOS Transistor Solution

Drain Current in Saturation Region in MOS Transistor Formula Elements

Other formulas in MOS Transistor category

How to Evaluate Drain Current in Saturation Region in MOS Transistor?

FAQs on Drain Current in Saturation Region in MOS Transistor

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