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Drain Current from Source to Drain Formula

GoDrain Current in Triode Region of PMOS Transistor Formula

GoDrain Current in Triode Region of PMOS Transistor given Vsd Formula

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Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET). Check FAQs

I d = (W \cdot Q p \cdot μ p \cdot E y)

I_d - Drain Current?W - Width of Junction?Q_p - Inversion Layer Charge?μ_p - Mobility of Holes in Channel?E_y - Horizontal Component of Electric Field in Channel?

Drain Current from Source to Drain Example

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Here is how the Drain Current from Source to Drain equation looks like with Values.

Here is how the Drain Current from Source to Drain equation looks like with Units.

Here is how the Drain Current from Source to Drain equation looks like.

29.5965 = (1.19 \cdot 0.0017 \cdot 2.66 \cdot 5.5)

29.5965mA = (1.19m \cdot 0.0017C/m² \cdot 2.66m²/V*s \cdot 5.5V/m)

29.5965 = (1.19 \cdot 0.0017 \cdot 2.66 \cdot 5.5)

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Drain Current from Source to Drain Solution

Follow our step by step solution on how to calculate Drain Current from Source to Drain?

FIRST Step Consider the formula

I d = (W \cdot Q p \cdot μ p \cdot E y)

Next Step Substitute values of Variables

∴

I d = (1.19m \cdot 0.0017C/m² \cdot 2.66m²/V*s \cdot 5.5V/m)

Next Step Prepare to Evaluate

∴

I d = (1.19 \cdot 0.0017 \cdot 2.66 \cdot 5.5)

Next Step Evaluate

∴

I d = 0.02959649A

Next Step Convert to Output's Unit

∴

I d = 29.59649mA

LAST Step Rounding Answer

∴

I d = 29.5965mA

Drain Current from Source to Drain Formula Elements

Variables

Drain Current

Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).

Symbol: I_d

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Formulas to find Drain Current

Width of Junction

Width of junction is the parameter which signifies how wide is the base junction of any analog electronics element.

Symbol: W

Measurement: LengthUnit: m

Note: Value can be positive or negative.

Formulas to find Width of Junction

Inversion Layer Charge

Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.

Symbol: Q_p

Measurement: Surface Charge DensityUnit: C/m²

Note: Value can be positive or negative.

Formulas to find Inversion Layer Charge

Mobility of Holes in Channel

Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.

Symbol: μ_p

Measurement: MobilityUnit: m²/V*s

Note: Value can be positive or negative.

Formulas to find Mobility of Holes in Channel

Horizontal Component of Electric Field in Channel

Horizontal Component of Electric Field in Channel is the strength of the electric field that exists in the material under the gate oxide layer, in the region where the inversion layer is formed.

Symbol: E_y

Measurement: Electric Field StrengthUnit: V/m

Note: Value can be positive or negative.

Formulas to find Horizontal Component of Electric Field in Channel

Other Formulas to find Drain Current

Go Drain Current in Triode Region of PMOS Transistor

I d = k' p \cdot WL \cdot ((V GS - mod \underset{̲}{u} s (V T)) \cdot V DS - \frac{1}{2} \cdot {(V DS)}^{2})

Go Drain Current in Triode Region of PMOS Transistor given Vsd

I d = k' p \cdot WL \cdot (mod \underset{̲}{u} s (V ov) - \frac{1}{2} \cdot V DS) \cdot V DS

Go Overall Drain Current of PMOS Transistor

I d = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2} \cdot (1 + \frac{V DS}{mod} \underset{̲}{u} s (V a))

Go Current in Inversion Channel of PMOS

I d = (W \cdot Q p \cdot V y)

Other formulas in P Channel Enhancement category

Go Drain Current in Saturation Region of PMOS Transistor

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V GS - mod \underset{̲}{u} s (V T))}^{2}

Go Drain Current in Saturation Region of PMOS Transistor given Vov

I ds = \frac{1}{2} \cdot k' p \cdot WL \cdot {(V ov)}^{2}

Go Process Transconductance Parameter of PMOS

k' p = μ p \cdot C ox

Go Current in Inversion Channel of PMOS given Mobility

V y = μ p \cdot E y

How to Evaluate Drain Current from Source to Drain?

Drain Current from Source to Drain evaluator uses Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel) to evaluate the Drain Current, The Drain current from source to drain in saturation region of PMOS transistor given Vov, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation. Drain Current is denoted by I_d symbol.

How to evaluate Drain Current from Source to Drain using this online evaluator? To use this online evaluator for Drain Current from Source to Drain, enter Width of Junction (W), Inversion Layer Charge (Q_p), Mobility of Holes in Channel (μ_p) & Horizontal Component of Electric Field in Channel (E_y) and hit the calculate button.

FAQs on Drain Current from Source to Drain

What is the formula to find Drain Current from Source to Drain?

The formula of Drain Current from Source to Drain is expressed as Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel). Here is an example- 29596.49 = (1.19*0.0017*2.66*5.5).

How to calculate Drain Current from Source to Drain?

With Width of Junction (W), Inversion Layer Charge (Q_p), Mobility of Holes in Channel (μ_p) & Horizontal Component of Electric Field in Channel (E_y) we can find Drain Current from Source to Drain using the formula - Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel).

What are the other ways to Calculate Drain Current?

Here are the different ways to Calculate Drain Current-

Drain Current=Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)
Drain Current=Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source
Drain Current=1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Can the Drain Current from Source to Drain be negative?

No, the Drain Current from Source to Drain, measured in Electric Current cannot be negative.

Which unit is used to measure Drain Current from Source to Drain?

Drain Current from Source to Drain is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Drain Current from Source to Drain can be measured.

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Drain Current from Source to Drain Formula

​GoDrain Current in Triode Region of PMOS Transistor Formula

​GoDrain Current in Triode Region of PMOS Transistor given Vsd Formula

Drain Current from Source to Drain Example

Drain Current from Source to Drain Solution

Drain Current from Source to Drain Formula Elements

Other Formulas to find Drain Current

Other formulas in P Channel Enhancement category

How to Evaluate Drain Current from Source to Drain?

FAQs on Drain Current from Source to Drain

Variable Name

GoDrain Current in Triode Region of PMOS Transistor Formula

GoDrain Current in Triode Region of PMOS Transistor given Vsd Formula