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Drain Current Formula

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Drain Current is defined as the sub-threshold current which is usually below the threshold current and varies exponentially with gate to source voltage. Check FAQs

I D = μ n \cdot C ox \cdot (\frac{W gate}{L g}) \cdot (V gs - V th) \cdot V ds

I_D - Drain Current?μ_n - Mobility of Electron?C_ox - Gate Oxide Capacitance?W_gate - Gate Junction Width?L_g - Gate Length?V_gs - Gate Source Voltage?V_th - Threshold Voltage?V_ds - Drain Source Saturation Voltage?

Drain Current Example

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Here is how the Drain Current equation looks like with Values.

Here is how the Drain Current equation looks like with Units.

Here is how the Drain Current equation looks like.

891 = 180 \cdot 75 \cdot (\frac{230}{2.3}) \cdot (1.25 - 0.7) \cdot 1.2

891mA = 180m²/V*s \cdot 75nF \cdot (\frac{230μm}{2.3nm}) \cdot (1.25V - 0.7V) \cdot 1.2V

891 = 180 \cdot 75 \cdot (\frac{230}{2.3}) \cdot (1.25 - 0.7) \cdot 1.2

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Drain Current Solution

Follow our step by step solution on how to calculate Drain Current?

FIRST Step Consider the formula

I D = μ n \cdot C ox \cdot (\frac{W gate}{L g}) \cdot (V gs - V th) \cdot V ds

Next Step Substitute values of Variables

∴

I D = 180m²/V*s \cdot 75nF \cdot (\frac{230μm}{2.3nm}) \cdot (1.25V - 0.7V) \cdot 1.2V

Next Step Convert Units

∴

I D = 180m²/V*s \cdot 7.5E-8F \cdot (\frac{0.0002m}{2.3E-9m}) \cdot (1.25V - 0.7V) \cdot 1.2V

Next Step Prepare to Evaluate

∴

I D = 180 \cdot 7.5E-8 \cdot (\frac{0.0002}{2.3E-9}) \cdot (1.25 - 0.7) \cdot 1.2

Next Step Evaluate

∴

I D = 0.891A

LAST Step Convert to Output's Unit

∴

I D = 891mA

Drain Current Formula Elements

Variables

Drain Current

Drain Current is defined as the sub-threshold current which is usually below the threshold current and varies exponentially with gate to source voltage.

Symbol: I_D

Measurement: Electric CurrentUnit: mA

Note: Value should be greater than 0.

Mobility of Electron

Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.

Symbol: μ_n

Measurement: MobilityUnit: m²/V*s

Note: Value should be greater than 0.

Gate Oxide Capacitance

Gate Oxide Capacitance is the ability of a component or circuit to collect and store energy in the form of an electrical charge.

Symbol: C_ox

Measurement: CapacitanceUnit: nF

Note: Value should be greater than 0.

Gate Junction Width

Gate Junction Width is defined as the width of gate junction in a semiconductor device.

Symbol: W_gate

Measurement: LengthUnit: μm

Note: Value should be greater than 0.

Gate Length

Gate length is simply the physical gate length. Channel length is the path that links the charge carriers between the drain and the source.

Symbol: L_g

Measurement: LengthUnit: nm

Note: Value can be positive or negative.

Gate Source Voltage

Gate Source Voltage of a transistor is the voltage that falls across the gate-source terminal of the transistor.

Symbol: V_gs

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Threshold Voltage

Threshold Voltage of transistor is minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.

Symbol: V_th

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Drain Source Saturation Voltage

Drain Source Saturation Voltage is the voltage difference between the emitter and collector terminal required to turn a MOSFET on.

Symbol: V_ds

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Credits

Created by Akshada Kulkarni

National Institute of Information Technology (NIIT), Neemrana

Akshada Kulkarni has created this Formula and 500+ more formulas!

Verified by Team Softusvista

Softusvista Office (Pune), India

Team Softusvista has verified this Formula and 1100+ more formulas!

Other formulas in Transistor Operating Parameters category

Go Emitter Current

I e = I b + I c

Go Current Amplification Factor

α = \frac{I c}{I e}

How to Evaluate Drain Current?

Drain Current evaluator uses Drain Current = Mobility of Electron*Gate Oxide Capacitance*(Gate Junction Width/Gate Length)*(Gate Source Voltage-Threshold Voltage)*Drain Source Saturation Voltage to evaluate the Drain Current, Drain Current is defined as the sub threshold current and varies exponentially with gate to source voltage below threshold voltage. Drain Current is denoted by I_D symbol.

How to evaluate Drain Current using this online evaluator? To use this online evaluator for Drain Current, enter Mobility of Electron (μ_n), Gate Oxide Capacitance (C_ox), Gate Junction Width (W_gate), Gate Length (L_g), Gate Source Voltage (V_gs), Threshold Voltage (V_th) & Drain Source Saturation Voltage (V_ds) and hit the calculate button.

FAQs on Drain Current

What is the formula to find Drain Current?

The formula of Drain Current is expressed as Drain Current = Mobility of Electron*Gate Oxide Capacitance*(Gate Junction Width/Gate Length)*(Gate Source Voltage-Threshold Voltage)*Drain Source Saturation Voltage. Here is an example- 891000 = 180*7.5E-08*(0.00023/2.3E-09)*(1.25-0.7)*1.2.

How to calculate Drain Current?

With Mobility of Electron (μ_n), Gate Oxide Capacitance (C_ox), Gate Junction Width (W_gate), Gate Length (L_g), Gate Source Voltage (V_gs), Threshold Voltage (V_th) & Drain Source Saturation Voltage (V_ds) we can find Drain Current using the formula - Drain Current = Mobility of Electron*Gate Oxide Capacitance*(Gate Junction Width/Gate Length)*(Gate Source Voltage-Threshold Voltage)*Drain Source Saturation Voltage.

Can the Drain Current be negative?

No, the Drain Current, measured in Electric Current cannot be negative.

Which unit is used to measure Drain Current?

Drain Current is usually measured using the Milliampere[mA] for Electric Current. Ampere[mA], Microampere[mA], Centiampere[mA] are the few other units in which Drain Current can be measured.

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Drain Current Formula

Drain Current Example

Drain Current Solution

Drain Current Formula Elements

Credits

Other formulas in Transistor Operating Parameters category

How to Evaluate Drain Current?

FAQs on Drain Current

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