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Drain Current Flowing through MOS Transistor Formula

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Drain Current is the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate. Check FAQs

I D = (\frac{W}{L}) \cdot μ n \cdot C ox \cdot \int ((V GS - x - V T), x, 0, V DS)

I_D - Drain Current?W - Channel Width?L - Channel Length?μ_n - Electron Mobility?C_ox - Oxide Capacitance?V_GS - Gate Source Voltage?V_T - Threshold Voltage?V_DS - Drain Source Voltage?

Drain Current Flowing through MOS Transistor Example

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Here is how the Drain Current Flowing through MOS Transistor equation looks like with Values.

Here is how the Drain Current Flowing through MOS Transistor equation looks like with Units.

Here is how the Drain Current Flowing through MOS Transistor equation looks like.

1675.7219 = (\frac{2.678}{3.45}) \cdot 9.92 \cdot 3.9 \cdot \int ((29.65 - x - 5.91), x, 0, 45)

1675.7219A = (\frac{2.678m}{3.45m}) \cdot 9.92m²/V*s \cdot 3.9F \cdot \int ((29.65V - x - 5.91V), x, 0, 45V)

1675.7219 = (\frac{2.678}{3.45}) \cdot 9.92 \cdot 3.9 \cdot \int ((29.65 - x - 5.91), x, 0, 45)

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Drain Current Flowing through MOS Transistor Solution

Follow our step by step solution on how to calculate Drain Current Flowing through MOS Transistor?

FIRST Step Consider the formula

I D = (\frac{W}{L}) \cdot μ n \cdot C ox \cdot \int ((V GS - x - V T), x, 0, V DS)

Next Step Substitute values of Variables

∴

I D = (\frac{2.678m}{3.45m}) \cdot 9.92m²/V*s \cdot 3.9F \cdot \int ((29.65V - x - 5.91V), x, 0, 45V)

Next Step Prepare to Evaluate

∴

I D = (\frac{2.678}{3.45}) \cdot 9.92 \cdot 3.9 \cdot \int ((29.65 - x - 5.91), x, 0, 45)

Next Step Evaluate

∴

I D = 1675.72193947826A

LAST Step Rounding Answer

∴

I D = 1675.7219A

Drain Current Flowing through MOS Transistor Formula Elements

Variables

Functions

Drain Current

Drain Current is the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate.

Symbol: I_D

Measurement: Electric CurrentUnit: A

Note: Value can be positive or negative.

Formulas to find Drain Current

Channel Width

Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.

Symbol: W

Measurement: LengthUnit: m

Note: Value can be positive or negative.

Formulas to find Channel Width

Channel Length

Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance.

Symbol: L

Measurement: LengthUnit: m

Note: Value can be positive or negative.

Formulas to find Channel Length

Electron Mobility

Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage.

Symbol: μ_n

Measurement: MobilityUnit: m²/V*s

Note: Value can be positive or negative.

Formulas to find Electron Mobility

Oxide Capacitance

Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.

Symbol: C_ox

Measurement: CapacitanceUnit: F

Note: Value should be greater than 0.

Formulas to find Oxide Capacitance

Gate Source Voltage

Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET.

Symbol: V_GS

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Gate Source Voltage

Threshold Voltage

Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow.

Symbol: V_T

Measurement: Electric PotentialUnit: V

Note: Value can be positive or negative.

Formulas to find Threshold Voltage

Drain Source Voltage

Drain Source Voltage is the voltage applied between drain and source terminal.

Symbol: V_DS

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Drain Source Voltage

int

The definite integral can be used to calculate net signed area, which is the area above the x -axis minus the area below the x -axis.

Syntax: int(expr, arg, from, to)

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C eq(sw) = P \cdot C jsw \cdot K eq(sw)

How to Evaluate Drain Current Flowing through MOS Transistor?

Drain Current Flowing through MOS Transistor evaluator uses Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage) to evaluate the Drain Current, The Drain Current Flowing through MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate. Drain Current is denoted by I_D symbol.

How to evaluate Drain Current Flowing through MOS Transistor using this online evaluator? To use this online evaluator for Drain Current Flowing through MOS Transistor, enter Channel Width (W), Channel Length (L), Electron Mobility (μ_n), Oxide Capacitance (C_ox), Gate Source Voltage (V_GS), Threshold Voltage (V_T) & Drain Source Voltage (V_DS) and hit the calculate button.

FAQs on Drain Current Flowing through MOS Transistor

What is the formula to find Drain Current Flowing through MOS Transistor?

The formula of Drain Current Flowing through MOS Transistor is expressed as Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage). Here is an example- -23935.795961 = (2.678/3.45)*9.92*3.9*int((29.65-x-5.91),x,0,45).

How to calculate Drain Current Flowing through MOS Transistor?

With Channel Width (W), Channel Length (L), Electron Mobility (μ_n), Oxide Capacitance (C_ox), Gate Source Voltage (V_GS), Threshold Voltage (V_T) & Drain Source Voltage (V_DS) we can find Drain Current Flowing through MOS Transistor using the formula - Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage). This formula also uses Definite Integral (int) function(s).

Can the Drain Current Flowing through MOS Transistor be negative?

Yes, the Drain Current Flowing through MOS Transistor, measured in Electric Current can be negative.

Which unit is used to measure Drain Current Flowing through MOS Transistor?

Drain Current Flowing through MOS Transistor is usually measured using the Ampere[A] for Electric Current. Milliampere[A], Microampere[A], Centiampere[A] are the few other units in which Drain Current Flowing through MOS Transistor can be measured.

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Drain Current Flowing through MOS Transistor Formula

Drain Current Flowing through MOS Transistor Example

Drain Current Flowing through MOS Transistor Solution

Drain Current Flowing through MOS Transistor Formula Elements

Other formulas in MOS Transistor category

How to Evaluate Drain Current Flowing through MOS Transistor?

FAQs on Drain Current Flowing through MOS Transistor

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