Donor Dopant Concentration Formula

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Donor Dopant Concentration is the concentration of donor atoms per unit volume. Check FAQs
Nd=IsatLt[Charge-e]WtμnCdep
Nd - Donor Dopant Concentration?Isat - Saturation Current?Lt - Transistor's Length?Wt - Transistor's Width?μn - Electron Mobility?Cdep - Depletion Layer Capacitance?[Charge-e] - Charge of electron?

Donor Dopant Concentration Example

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With units
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Here is how the Donor Dopant Concentration equation looks like with Values.

Here is how the Donor Dopant Concentration equation looks like with Units.

Here is how the Donor Dopant Concentration equation looks like.

1.7E+23Edit=2.015Edit3.2Edit1.6E-195.5Edit30Edit1.4Edit
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Donor Dopant Concentration Solution

Follow our step by step solution on how to calculate Donor Dopant Concentration?

FIRST Step Consider the formula
Nd=IsatLt[Charge-e]WtμnCdep
Next Step Substitute values of Variables
Nd=2.015A3.2μm[Charge-e]5.5μm30m²/V*s1.4μF
Next Step Substitute values of Constants
Nd=2.015A3.2μm1.6E-19C5.5μm30m²/V*s1.4μF
Next Step Convert Units
Nd=2.015A3.2E-6m1.6E-19C5.5E-6m30m²/V*s1.4E-6F
Next Step Prepare to Evaluate
Nd=2.0153.2E-61.6E-195.5E-6301.4E-6
Next Step Evaluate
Nd=1.74221865211214E+23electrons/m³
LAST Step Rounding Answer
Nd=1.7E+23electrons/m³

Donor Dopant Concentration Formula Elements

Variables
Constants
Donor Dopant Concentration
Donor Dopant Concentration is the concentration of donor atoms per unit volume.
Symbol: Nd
Measurement: Electron DensityUnit: electrons/m³
Note: Value should be greater than 0.
Saturation Current
Saturation Current refers to the maximum current that can flow through the transistor when it is fully turned on.
Symbol: Isat
Measurement: Electric CurrentUnit: A
Note: Value can be positive or negative.
Transistor's Length
Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Symbol: Lt
Measurement: LengthUnit: μm
Note: Value should be greater than 0.
Transistor's Width
Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Symbol: Wt
Measurement: LengthUnit: μm
Note: Value should be greater than 0.
Electron Mobility
Electron Mobility describes how quickly electrons can move through the material in response to an electric field.
Symbol: μn
Measurement: MobilityUnit: m²/V*s
Note: Value should be greater than 0.
Depletion Layer Capacitance
Depletion Layer Capacitance per Unit Area is the capacitance of depletion layer per unit area.
Symbol: Cdep
Measurement: CapacitanceUnit: μF
Note: Value can be positive or negative.
Charge of electron
Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.
Symbol: [Charge-e]
Value: 1.60217662E-19 C

Other formulas in MOS IC Fabrication category

​Go Body Effect in MOSFET
Vt=Vth+γ(2Φf+Vbs-2Φf)
​Go MOSFET Unity-Gain Frequency
ft=gmCgs+Cgd
​Go Drain Current of MOSFET at Saturation Region
Id=β2(Vgs-Vth)2(1+λiVds)
​Go Channel Resistance
Rch=LtWt1μnQon

How to Evaluate Donor Dopant Concentration?

Donor Dopant Concentration evaluator uses Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance) to evaluate the Donor Dopant Concentration, The Donor Dopant Concentration formula is defined as the concentration of donor atoms intentionally introduced into a semiconductor material to increase the number of free charge carriers (electrons) available for conduction. Donor Dopant Concentration is denoted by Nd symbol.

How to evaluate Donor Dopant Concentration using this online evaluator? To use this online evaluator for Donor Dopant Concentration, enter Saturation Current (Isat), Transistor's Length (Lt), Transistor's Width (Wt), Electron Mobility n) & Depletion Layer Capacitance (Cdep) and hit the calculate button.

FAQs on Donor Dopant Concentration

What is the formula to find Donor Dopant Concentration?
The formula of Donor Dopant Concentration is expressed as Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance). Here is an example- 1.7E+23 = (2.015*3.2E-06)/([Charge-e]*5.5E-06*30*1.4E-06).
How to calculate Donor Dopant Concentration?
With Saturation Current (Isat), Transistor's Length (Lt), Transistor's Width (Wt), Electron Mobility n) & Depletion Layer Capacitance (Cdep) we can find Donor Dopant Concentration using the formula - Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance). This formula also uses Charge of electron constant(s).
Can the Donor Dopant Concentration be negative?
No, the Donor Dopant Concentration, measured in Electron Density cannot be negative.
Which unit is used to measure Donor Dopant Concentration?
Donor Dopant Concentration is usually measured using the Electrons per Cubic Meter[electrons/m³] for Electron Density. Electrons per Cubic Centimeter[electrons/m³] are the few other units in which Donor Dopant Concentration can be measured.
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