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Depth of Depletion Region Associated with Drain Formula

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Drain's Depth of Depletion Region is the depletion region that forms near the drain terminal when a voltage is applied to the gate terminal. Check FAQs

x dD = \sqrt{\frac{2 \cdot [Permitivity-silicon] \cdot (Φ o + V DS)}{[Charge-e] \cdot N A}}

x_dD - Drain's Depth of Depletion Region?Φ_o - Built in Junction Potential?V_DS - Drain Source Voltage?N_A - Doping Concentration of Acceptor?[Permitivity-silicon] - Permittivity of silicon?[Charge-e] - Charge of electron?

Depth of Depletion Region Associated with Drain Example

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Here is how the Depth of Depletion Region Associated with Drain equation looks like with Values.

Here is how the Depth of Depletion Region Associated with Drain equation looks like with Units.

Here is how the Depth of Depletion Region Associated with Drain equation looks like.

7.2E+7 = \sqrt{\frac{2 \cdot 11.7 \cdot (2 + 45)}{1.6E-19 \cdot 1.32}}

7.2E+7m = \sqrt{\frac{2 \cdot 11.7 \cdot (2V + 45V)}{1.6E-19C \cdot 1.32electrons/cm³}}

7.2E+7 = \sqrt{\frac{2 \cdot 11.7 \cdot (2 + 45)}{1.6E-19 \cdot 1.32}}

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Depth of Depletion Region Associated with Drain Solution

Follow our step by step solution on how to calculate Depth of Depletion Region Associated with Drain?

FIRST Step Consider the formula

x dD = \sqrt{\frac{2 \cdot [Permitivity-silicon] \cdot (Φ o + V DS)}{[Charge-e] \cdot N A}}

Next Step Substitute values of Variables

∴

x dD = \sqrt{\frac{2 \cdot [Permitivity-silicon] \cdot (2V + 45V)}{[Charge-e] \cdot 1.32electrons/cm³}}

Next Step Substitute values of Constants

∴

x dD = \sqrt{\frac{2 \cdot 11.7 \cdot (2V + 45V)}{1.6E-19C \cdot 1.32electrons/cm³}}

Next Step Convert Units

∴

x dD = \sqrt{\frac{2 \cdot 11.7 \cdot (2V + 45V)}{1.6E-19C \cdot 1.3E+6electrons/m³}}

Next Step Prepare to Evaluate

∴

x dD = \sqrt{\frac{2 \cdot 11.7 \cdot (2 + 45)}{1.6E-19 \cdot 1.3E+6}}

Next Step Evaluate

∴

x dD = 72113188.282716m

LAST Step Rounding Answer

∴

x dD = 7.2E+7m

Depth of Depletion Region Associated with Drain Formula Elements

Variables

Constants

Functions

Drain's Depth of Depletion Region

Drain's Depth of Depletion Region is the depletion region that forms near the drain terminal when a voltage is applied to the gate terminal.

Symbol: x_dD

Measurement: LengthUnit: m

Note: Value should be greater than 0.

Formulas to find Drain's Depth of Depletion Region

Built in Junction Potential

Built in Junction Potential refers to the potential difference or voltage that exists across a semiconductor junction when it is not connected to an external voltage source.

Symbol: Φ_o

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Built in Junction Potential

Drain Source Voltage

Drain Source Voltage is the voltage applied between drain and source terminal.

Symbol: V_DS

Measurement: Electric PotentialUnit: V

Note: Value should be greater than 0.

Formulas to find Drain Source Voltage

Doping Concentration of Acceptor

Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.

Symbol: N_A

Measurement: Electron DensityUnit: electrons/cm³

Note: Value should be greater than 0.

Formulas to find Doping Concentration of Acceptor

Permittivity of silicon

Permittivity of silicon measures its ability to store electrical energy in an electric field, vital in semiconductor technology.

Symbol: [Permitivity-silicon]

Value: 11.7

Charge of electron

Charge of electron is a fundamental physical constant, representing the electric charge carried by an electron, which is the elementary particle with a negative electric charge.

Symbol: [Charge-e]

Value: 1.60217662E-19 C

sqrt

A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number.

Syntax: sqrt(Number)

Other formulas in MOS Transistor category

Go Zero Bias Sidewall Junction Capacitance per Unit Length

C jsw = C j0sw \cdot x j

Go Equivalent Large Signal Junction Capacitance

C eq(sw) = P \cdot C jsw \cdot K eq(sw)

Go Fermi Potential for P Type

Φ Fp = \frac{[BoltZ] \cdot T a}{[Charge-e]} \cdot \ln (\frac{n i}{N A})

Go Sidewall Voltage Equivalence Factor

K eq(sw) = - (2 \cdot \frac{\sqrt{Φ osw}}{V 2 - V 1} \cdot (\sqrt{Φ osw - V 2} - \sqrt{Φ osw - V 1}))

How to Evaluate Depth of Depletion Region Associated with Drain?

Depth of Depletion Region Associated with Drain evaluator uses Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor)) to evaluate the Drain's Depth of Depletion Region, The Depth of Depletion Region Associated with Drain formula is defined as the depletion region that forms near the drain terminal when a voltage is applied to the gate terminal. Drain's Depth of Depletion Region is denoted by x_dD symbol.

How to evaluate Depth of Depletion Region Associated with Drain using this online evaluator? To use this online evaluator for Depth of Depletion Region Associated with Drain, enter Built in Junction Potential (Φ_o), Drain Source Voltage (V_DS) & Doping Concentration of Acceptor (N_A) and hit the calculate button.

FAQs on Depth of Depletion Region Associated with Drain

What is the formula to find Depth of Depletion Region Associated with Drain?

The formula of Depth of Depletion Region Associated with Drain is expressed as Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor)). Here is an example- 1.6E+7 = sqrt((2*[Permitivity-silicon]*(2+45))/([Charge-e]*1320000)).

How to calculate Depth of Depletion Region Associated with Drain?

With Built in Junction Potential (Φ_o), Drain Source Voltage (V_DS) & Doping Concentration of Acceptor (N_A) we can find Depth of Depletion Region Associated with Drain using the formula - Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor)). This formula also uses Permittivity of silicon, Charge of electron constant(s) and Square Root (sqrt) function(s).

Can the Depth of Depletion Region Associated with Drain be negative?

No, the Depth of Depletion Region Associated with Drain, measured in Length cannot be negative.

Which unit is used to measure Depth of Depletion Region Associated with Drain?

Depth of Depletion Region Associated with Drain is usually measured using the Meter[m] for Length. Millimeter[m], Kilometer[m], Decimeter[m] are the few other units in which Depth of Depletion Region Associated with Drain can be measured.

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Depth of Depletion Region Associated with Drain Formula

Depth of Depletion Region Associated with Drain Example

Depth of Depletion Region Associated with Drain Solution

Depth of Depletion Region Associated with Drain Formula Elements

Other formulas in MOS Transistor category

How to Evaluate Depth of Depletion Region Associated with Drain?

FAQs on Depth of Depletion Region Associated with Drain

Variable Name